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Abstract: WULF
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RUG-Z
WULF
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LVLR
Abstract: IR LFN XSLH
Text: ,1 0$ 7 5& 5 1 + $ 7 ,21 $ / & 21 ( 5 ( 1 & ( 21 $ & 28 6 7 ,& 6 6 3 ( ( & + $ 1 ' 6 ,* 1 $ / 3 5 2& ( 6 6 ,1 * ,& $ 6 6 3 3 + ( 21 ,; $ 5,=21 $ + , *+ 3 ( 5)250 $1 &( )3 *$ ), /7 ( 56 86, 1 * 6, *0 0 2'8/$7 , 21 ( 1 &2', 1 * &KULV ' LFN
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Abstract: VW-1 H Rq652 3RW datasheet KH-98 vxl LG 631 PV-272 Z679 EL-7L sxwdq
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EZ 649
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VDE598
Abstract: U-537
Text: 31|*1 .JQC27;F/ ;=-6474,<=:0 3423 98?0: :05,@ 1EBOPMEN V Eqmk^f^er ehp \hlm V 9555VAC lnk`^ ohemZ`^ .[^mp^^g \hbe Zg] \hgmZ\ml/ V 65A 7:5VAC .Zm =: / lpbm\abg` \ZiZ[bebmr V Ce^ZkZg\^ 4 \k^^iZ`^ ]blmZg\^ f^^mbg` VDE598: 4 5<55 Fbe^ Nh3?E6889=6 V CTI 7:54CTI 855 ZoZbeZ[e^
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7395
Abstract: u538
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Abstract: No abstract text available
Text: 643~-|,} 97:7/?@=3 6756 <;A3= 8/?167:5 =38/B 4FCQROFP W =7C lpbm\abg` \ZiZ[bebmr W LZm\abg` k^eZr W MZdbg` m^lm 8?77C i^^d lahkm \bk\nbm \nkk^gm W EZkkrbg` ma^ :<77C lahkm \bk\nbm \nkk^gm pbmahnm ^qiehlbhg W ;dV ]b^e^\mkb\ lmk^g`ma 0[^mp^^g \hbe Zg] \hgmZ\m1
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Q5627
Abstract: ho2 2312 IRO44
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Abstract: No abstract text available
Text: 42}+2 <>.7585-=>;1 4534 :9@1; ;16-A 2FCPQNFO W Fqmk^f^er ehp \hlm Gbe^ Nh4@F79:;7= W :666VBD lnk`^ ohemZ`^ /[^mp^^g \hbe Zg] \hgmZ\ml0 W 76B 8;6VBD /Zm >; 0 lpbm\abg` \ZiZ[bebmr ? 0 1 W De^ZkZg\^ 5 \k^^iZ`^ ]blmZg\^ f^^mbg` VEF6:9; 5 6=66 Gbe^ Nh4@ :6679?;
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Abstract: mz 73 b IQN69556 26H8 EZ 938
Text: ;9=B 4FEA?AE<G8 C8>4I 9NKXYVNW } 9: A lpbm\abg` \ZiZ[bebmr } 6 Fhkf A - 6 Fhkf C \hgmZ\m ZkkZg`^f^gm } OCB m^kfbgZel ZoZbeZ[e^ E\UPLKQ 4UUQPLKXPTSW } Rph ibg hnm \ahb\^l Rnkgbg` eZfi1 ]Zg`^khnl lb`gZe-l\kZf eZfi \hgmkhe1 An]bh lrlm^f1 Abk2\hg]bmbhgbg`1 Fn^e infi \hgmkhe1 Khp m^fi^kZmnk^ \hgmkhe1
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CTI694
Abstract: V140
Text: 0.|., .JQC1;FD/ 8:*3141~9:7- 01/0 65<-7 7-2~= .B?LMJBK S 56A lpbm\abg` \ZiZ[bebmr S Hb`a i^k_hkfZg\^0 Lhp ikh_be^ S 6dV ]b^e^\mkb\ lmk^g`ma .[^mp^^g \hbe Zg] \hgmZ\ml/ S VDE 4:75 3 4;44 Fbe^ Nh2>E5778<5 S UL=80 V140 CTI694 _eZffZ[bebmr \eZll S 5 Fhkf A Zg] 5 Fhkf C \hg_b`nkZmbhgl
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LHI 648
Abstract: transistor L44
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Abstract: ez 948
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Text: :8/.18,0 >;?;3DEB7 :;9: A@G7B B7=3H 8MJYZWMX |BE> .Hgs{jlmnjp Z miw LPBM<ABG@ <:I:;BEBMR Z kgnD6 =B>E><MKB< LMK>G@MA F 6 7 c;>MP>>G <HBE :G= <HGM:<MLd Z ~>:OR EH:= NI MH pekii6w |BE> .Hgsmiiknnjq Z yE:LL | BGLNE:MBHG :O:BE:;E> Z {GOBKHGF>GM:E ?KB>G=ER IKH=N<M c2H~3 <HFIEB:GMd
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Untitled
Abstract: No abstract text available
Text: STP170N8F7 N-channel 80 V, 0.003 Ω typ., 120 A, STripFET VII DeepGATE Power MOSFET in TO-220 package Datasheet — production data Features Order code VDS RDS on max. STP170N8F7 80 V 0.0039 Ω TAB ID PTOT 120 A 250 W • Ultra low on-resistance • 100% avalanche tested
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STP170N8F7
O-220
O-220
170N8F7
DocID024550
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Q7666
Abstract: No abstract text available
Text: 20}~0{; :<,5363+;<9/ 2312 ;/58/9+;<9/ 9/4+? 0DANOLDM Gbe^ Nh4@F79:;7= T 76B lpbm\abg` \ZiZ\bmr /Zm 76; 0 T :666VBD lnk`^ ohemZ`^/[^mp^^g \hbe Zg] \hgmZ\ml0 = . / T De^ZkZg\^ 5 \k^^iZ`^ ]blmZg\^ f^^mbg` VEF6:9; 5 6=66 Gbe^ Nh4@ :6679?; T UL?:2 V36 _eZffZ[bebmr \eZll
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666VBD
Q7666
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. kLV COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. t 6 7 5 4 3 2 - ALL RIGHTS RESERVED. REVISIONS LOC DIST AD 0 0 P LTR DESCRIPTION DATE AK ECO—05 —004683 AK1 REVISED PER E C 0 - 0 9 - 0 2 0 7 7 4 DWN
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20JAN06
21AUG09
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56uH
Abstract: No abstract text available
Text: 1. M e c h a n ic a l D im e n s i o n s : 2 . Schem atic: o- 1 2 f lr > M nv M ax a . E lectrical Specifications: In d u c ta n c e : 56uH ±15% In d u c ta n c e : 3 3 .7 u H ±15% DC R e s is ta n c e : Q .0 1 7 Q: 4 0 9 0 0 .0 5 3 ± 0 .0 0 8 0 .5 3 0
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10KHz,
MIL-STD-202G.
UL94V-0
E151556
3XF0566â
56uH
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Untitled
Abstract: No abstract text available
Text: RED INDICATES ORIGINAL DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TD TRDMPETER ELECTRONICS INC, AND SHALL NDT BE DISCLOSED, COPIED OR USED FDR PROCUREMENT DR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION. INCH .005 .010 ,025 .030 .156 .281 .375 MM 0, 13
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4375-28UNEF-2A
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Untitled
Abstract: No abstract text available
Text: 6 APPROVED: DATE:_ TITLE: L / \ _ A A A PIN 1 SPECIFICATIONS: Material: Insulator: PBT, rated UL 9 4 V -0 Insulator color: White Contacts: Brass Plating: Tin over Copper underplate overall Electrical: Operating voltage: 250 VAC max C urrent rating: 3 Amps max
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6822h
Abstract: No abstract text available
Text: 9621629 W WA TKI NS —JOHNS ON CO J P A l Ì ü ATK^ :j0HNS0N co □DObifiTTy- 10 TO 1 0 0 0 MHz TO -8 CASCADABLE AMPLIFIER • HIGH OUTPUT POWER: +22 dBm TYP.) • WIDE BANDWIDTH: 10-1000 MHz • LOW VSWR: < 1.5:1 (TYP.) • V Cc = 12 VOLTS ï~ O u tlin e D raw ings
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PA10-1
6822h
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FAA-PMA
Abstract: M39029/1-101 55112-A 31TW1-61 31TW1-5 MIL-S-83731 interphone 31TW1-7
Text: F 0 - 55 1 1 2 - A 4 3 HONEYWELL P A R T NUMBER 31TW1 SERIES CHART 1 D C \ / B A 4 3 1 2 REV DOCUMENT 11 0011406 C H A N G E D BY KSR CIRCUIT MADE WITH TOGGLE LEVER IN FAA-PMA APPROVED CATALOG LISTING A CHECK 23FEB05 AK ELECTRICAL DATA MICROPHONE SIDE 1- 2
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5112-A
31TW1
23FEB05
30VDC
31TW1-7
31TW1-5
31TW1-61
M390GED
14NOV92
16AUG93
FAA-PMA
M39029/1-101
55112-A
MIL-S-83731
interphone
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ne 11500
Abstract: TLE2141C
Text: - 324 - TLE2141/A TEXAS INSTRUMENTS ïtjffjg TLE2141C /I mm % m # tt 0 X J V - \ s - h :45V/ u s Vs-± 1 5 V # - f e I- ' 1 y ? • ? 4 A : 4 0 0 n s + 0 . 0 W Ta=25°C • «S1D±ÏBffl:±2~±20V • "S ü ■ U - ^ { li ^ ) S Œ ÏG Î V A j J l Œ
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TLE2141/A
400ns
TLE2141C/I
TLE2141AC/AI
CL-500pF
CL-100pF,
100kHz
100pF
20Vp-p,
ne 11500
TLE2141C
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