U181
Abstract: KL3L07
Text: 電流制御型 KL シリーズ 面実装品（SMD） TSS KL SERIES •外形寸法図 OUTLINE DIMENSIONS KL3L07 2.0 2.5 ±0.3 64 07 70V30A 1.5 ±0.2 Package : 1F ロット記号（例） 品名 クラス（略号） 2.0 4.2 ソルダリングパッドの参考パターン
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KL3L07
70V30A
T125unless
U181
KL3L07
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Untitled
Abstract: No abstract text available
Text: KL SMD TSS KL SERIES OUTLINE DIMENSIONS KL3L07 2.0 2.5 ±0.3 1.5 ±0.2 07 70V30A 64 Package : 1F ロット記号（例） 品名 クラス（略号） 2.0 4.2 ソルダリングパッドの参考パターン 1.2 ±0.3 1.2 ±0.3 0.1±0.1 2.0 ±0.3 0.2 0.9
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KL3L07
70V30A
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Untitled
Abstract: No abstract text available
Text: 電流制御型 KL シリーズ 面実装品（SMD） TSS KL SERIES •外形寸法図 OUTLINE DIMENSIONS KL3L07 2.0 2.5 ±0.3 64 07 70V30A 1.5 ±0.2 Package : 1F ロット記号（例） 品名 クラス（略号） 2.0 4.2 ソルダリングパッドの参考パターン
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KL3L07
70V30A
T125unless
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KL3L07
Abstract: No abstract text available
Text: SHINDENGEN TSS KL Series SMT OUTLINE DIMENSIONS KL3L07 Case : 1F Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM I TSM 10/1000Ês, Non-repetitive
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KL3L07
KL3L07
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN TSS KL Series SMT OUTLINE DIMENSIONS KL3L07 Case : 1F Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM I TSM 10/1000Ês, Non-repetitive
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KL3L07
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KL3L07
Abstract: smd 1f 1f smd transistor SMD Transistor 1f transistor 1f smd
Text: SHINDENGEN TSS KL Series KL3L07 SMD OUTLINE DIMENSIONS Case : 1F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM ITSM 10/1000 s, Non-repetitive
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KL3L07
10/1000s,
8/20s,
00V/s
KL3L07
smd 1f
1f smd transistor
SMD Transistor 1f
transistor 1f smd
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7555-T
Abstract: M1FM3
Text: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct
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D1FS4N
Abstract: G1VL8 KP4F12 D3FJ10 KL3Z18 K1VP24 1000cy DL04-18F1 KU4F8 smd 1f
Text: Ref. No. 84-119e November 13, 2006 Messrs. Request for Acceleration of Switching the Plating Type for Two-Terminal SMD Diodes Dear Valued Customer, We asked our customers the switching to Sn plating in our letter dated July 7, 2005 Ref. No. 83-033 and, thanks to your cooperation, the progress of the transition is much faster than expected.
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84-119e
yetking125,
24h85,
30minRT
30min
100cycles
1000h
D1FS4N
G1VL8
KP4F12
D3FJ10
KL3Z18
K1VP24
1000cy
DL04-18F1
KU4F8
smd 1f
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1.5KE400P
Abstract: 3A143 P6KE400P SMA4T39 P6KE39CP P6KE200A equivalent tvs505 equivalent TTS144 P6KE27P P6KE12CP
Text: CROSS REFERENCE PROTECTION DEVICES INDUSTRY STANDARD 1SMA5.0AT3 ↓ 1SMA78AT3 1SMB5.0AT3 ↓ 1SMB170AT3 1SMB5.0CAT3 ↓ 1SMB78CAT3 1SMC5.0AT3 ↓ 1SMC78AT3 1.0KE5.0,A ↓ 1.0KE170P,A 1.0KE5.0C,CA ↓ 1.0KE170C,CA 1.2KE5.0,A ↓ 1.2KE170,A 1.2KE5.0C,CA ↓
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1SMA78AT3
1SMB170AT3
1SMB78CAT3
1SMC78AT3
0KE170P
0KE170C
2KE170
2KE170C
4KESD160
4KESD160C
1.5KE400P
3A143
P6KE400P
SMA4T39
P6KE39CP
P6KE200A equivalent
tvs505 equivalent
TTS144
P6KE27P
P6KE12CP
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16-SQP
Abstract: kl3r20 Transient Surge Suppressors
Text: TRANSIENT SURGE THYRISTORS FEATURES • SURGE PROTECTION DIODE INCLUDES FOLDBACK TECHNOLOGY • FOR DIGITAL PHONES & PBX COMMS, MODEMS & FAX MACHINES • QUICK RESPONSE TIME & HOLDING CURRENT OFFERS LIGHTNING STRIKE PROTECTION • IDEAL FOR WIDE THERMAL EXCURSIONS
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KL3Z07
KL3Z18
KL3L07
KL3N14
KL3R20
KL3R25
KP4L07
KP4L08
KP4N12
KP4N14
16-SQP
Transient Surge Suppressors
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600w class d circuit diagram schematics
Abstract: TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3
Text: ASD and Discrete Products PROTECTION Devices and IPADs™ Improving the Immunity of your System Designer’s Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL
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SGPROTECT/1001
600w class d circuit diagram schematics
TM 1628 IC SCHEMATICS DIAGRAM
P6KE200A equivalent
30F126
AP6KE300CA
diode P6KE 100 A
TISPA79R241
SMBJ40A/CA-TR
ZP1400
1SMB5.0CAT3
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LT GBL406
Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Text: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA
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5CE10
5CE100
5CE100A
5CE100C
5CE100CA
5CE10A
5CE10C
5CE10CA
5CE11
5CE110
LT GBL406
SMBJ8.5CA
2KBP206
TS820-800T
LT KBJ608G
T1M5F600A
31DQ100
30BQ050
BYM95C
SB0100
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P6KE200A equivalent
Abstract: SICTE5 3A143 MR2835S equivalent ZP1400 P1.5KE440 ZZY-62 P6KE62CA BZW06-5V8 equivalent BR220-140 SICTE-8
Text: CROSS REFERENCE PROTECTION INDUSTRY STANDARD 1SMA59 1SMB5.0AT3 SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SM2Zxxx SM6T6V8A or SMBJ5.0A-TR ↓ 1SMB170AT3 ↓ SM6T200A or SMBJ170A-TR SM6T6V8CA or SMBJ5.0CA-TR 1SMB5.0CAT3 ↓ 1SMB78CAT3 ↓ SM6T200CA or SMBJ170CA
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1SMA59
1SMB170AT3
SM6T200A
SMBJ170A-TR
1SMB78CAT3
SM15T6V8A
1SMC78AT3
SM15T100A
SMCJ78A-TR
0KE170A
P6KE200A equivalent
SICTE5
3A143
MR2835S equivalent
ZP1400
P1.5KE440
ZZY-62 P6KE62CA
BZW06-5V8 equivalent
BR220-140
SICTE-8
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Untitled
Abstract: No abstract text available
Text: CSSPD KL SERIES KL S/'J-X SW1D KL3L07 ll- î-, A rtV • ■ -.■■! .V * » . 5»*.; .S?' .f j : ‘ ■ RATINGS Absolute Maximum Ratings Item Symbol Conditions _Type No, KL3L07 Units Storage Temperature T stg -4 0 -1 25 •c Junction Temperature Tj
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KL3L07
10/1000/iS
00V//ts
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4N12
Abstract: No abstract text available
Text: Su rface-M o un t Devices V a r is t o r s 1F Absolute Maximum Ratings Electrical C haracteristics Ta = 25X5 Outline If Ifsm Tstg T¡ Vf i If i VPS If 2 VPS IFS [m A ] [A ] [•c] [•c] [V ] [m A ] [V ] [m A ] [V ] [m A ] Package Fig. 370 7 .5 150 2 .3 + 0 .25
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CharacteriL3Z07
KL3LU06
KL3L07
KL3LU07
KL3N14
KL3R20
KP4L07
KP4N12
KP4R25
KP8LU07
4N12
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Untitled
Abstract: No abstract text available
Text: Surge Absorbers Transient Surge Suppressors [F eatures] 1. Bidirectional or uni-directional characteristics ' ^ switchboards 3. Large surge current capacity 4. Repeated use against surges is possible. KA3Z07 18 KA10R25 KL3Z07 18 ☆KL3L07 KL3N14 KL3R20 KP4L07
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O-221
KA3Z07
KA10R25
KL3Z07
KL3L07
KL3N14
KL3R20
KP4L07
KP4N12
KP10L06
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Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices A b so lu te M axim u m Ratings E le ctrica l C h a ra c te ristics T a — 25 = C O utline If Ifsm Tstg Tj V f, I f, V fs I f2 V F3 I f3 [m A] [A] [• C ] r c ] [V ] [m A] [V ] [m A] [V ] [m A] Package Fig. ☆ V R -6 1 F1 * 1 370
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shindengen m
Abstract: Thyristor diodes
Text: Shindengen’s Silicon Surge Protective Devices SSPD r KU, KL seriesj are a new generation of solid state arrester in response to the needs of sophisticated telecommunications society. With a PNPN structure, the r KU, KL seriesj perform a characteristics like bidirectional thyristor diodes for use
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tra80
D0-214AA
shindengen m
Thyristor diodes
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10L08
Abstract: KT15R
Text: Surge Absorbers Thyristor Surge Suppressors [F e a tu re s ] 1. Bidirectional or uni-directional characteristics 2. High speed response 3. Large surge current capacity 4. R epeated use a gainst surges is possible. [A p p lica tio n s] 1. Lightning surge adsorption fo r com m unications circuits
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O-221
L497B
E183905
10L08
KT15R
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ST03D200
Abstract: ST03D 55 ST02D-200 KU5R29N ST03D170 M67145 ST03D 65 st02d200
Text: Surge Absorbers AX06 Absolute Maximum Ratings Type No. P r*w . . |W| Tstg . ! ‘ :l Tj . AX 078 Electrical Characteristics V rm V br max (std) Ir (max) Conditions Ir I VI. .I VI . r q . ST02D-B2 m •!'.A ! AX 078 Silver 5-2 AX078
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AX078
ST02D-B2
ST02D-170
ST02D-200
ST03D-82
ST03D-170
ST03D-200
ST04-16
ST04-27
ST03D200
ST03D 55
KU5R29N
ST03D170
M67145
ST03D 65
st02d200
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T40N14
Abstract: KT40R KA3Z07 KT15R
Text: T ra n sie n t Surge S uppressors ¿Features] Applications^ 1. Bidirectional characteristics 1. Lightning surge adsorption for communications circuits 2. High speed response 2. Lightning surge adsorption for transmitters and switchboards 3. Large surge current capacity
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KT10N12
KT10R25
KT15N12
KT15R
KT40R
O-221
T40N14
KA3Z07
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Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices Absolute Maximum Ratings Ta = 25"C Electrical Characteristics Outline Tstg *n [A ] rc] 7.5 8 6 .5 -5 5 -1 5 0 -3 0 -1 2 5 125 If If s m [mA] 370 310 140 Type No. *V R 6 1 F 1 *' V R Y A 6*2 16*' %2 *• I ! On alum ina su b s tra te
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10L06
Abstract: P10R25 KL3N
Text: T ra n sie n t S urge S u p p re sso rs [F e a tu re s] 1. Bidirectional characteristics [A pplications] 1. Lightning surge adsorption for communications circuits 2. High speed response 2. Lightning surge adsorption for transmitters and switchboards 3. Large surge current capacity
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KA10N
KA10R
KL3L07
KP4N12
KP10N
P10R25
KP1SL07
KP15N
P10LU
10L06
KL3N
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KA3Z07
Abstract: No abstract text available
Text: Surge Absorbers ¡¡£1 Applications [Features] 1. Bidirectional or uni-directional characteristics 1. Lightning surge adsorption tor communications circuits 2. High speed response 2. Lightning surge adsorption for transmitters and switchboards 3. Large surge current capacity
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O-221
UL497B
E183905
KA3Z07
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