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    G3476-10

    Abstract: No abstract text available
    Text: InGaAs-PIN Photodiodes High-speed NIR Near Infrared Detectors with Low Noise In G a A s -P IN p h o to d io d e s h a v e a s m a ll le r m in a l c a p a c ita n c e an d th erefo re achieve fast response. In ad dition, these d ev ices feature low noise o p eratio n due to large shunt resistance.


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    PDF KIRDB0040EA KIRDB0042EA 900Max. KIRDA0005EA G3476-10

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    Abstract: No abstract text available
    Text: InGaAs-PIN Photodiodes High-speed NIR Near Infrared Detectors with Low Noise In G aA s-P IN p h o to d io d e s h ave a sm all term in al c ap a citan c e and therefore achieve last response. In addition, these devices feature low noise operation due to large shunt resistance.


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    PDF 128-elem D80039EA RDB0040E G6114-02 KIRDB0041EA KIRDB0042EA KIRDB0044EB KIRDA0005EA

    P5172

    Abstract: No abstract text available
    Text: InAs, InSb Photovoltaic Detectors Photovoltaic detectors with high­ speed response and low noise • Long cooling hold time: 8 hours A large capacity glass d e w a r cooled by liq u id nitrogen is used for stan d ard d e te cto r package. It allow s for 8-h o u r co n tin u o u s cooling.


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