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    KH5 25 Search Results

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    KH5 25 Price and Stock

    Winbond Electronics Corp W9825G6KH-5

    DRAM 256Mb SDR SDRAM x16, 200MHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics W9825G6KH-5 881
    • 1 $2.68
    • 10 $1.91
    • 100 $1.91
    • 1000 $1.68
    • 10000 $1.46
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    Winbond Electronics Corp W9425G6KH-5I

    DRAM 256Mb DDR SDRAM x16, 200Mhz, Ind temp
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    Mouser Electronics W9425G6KH-5I 517
    • 1 $2.81
    • 10 $2
    • 100 $2
    • 1000 $1.63
    • 10000 $1.53
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    Littelfuse Inc HQ6025KH5TP

    Triacs HT Altnstr 600V 25A 50-50-50 mA TO218Iso
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HQ6025KH5TP 493
    • 1 $9.4
    • 10 $8.06
    • 100 $6.71
    • 1000 $5.36
    • 10000 $5.36
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    Ohmite Mfg Co TKH55P25R0FE-TR

    Thick Film Resistors - SMD 55W 25ohms 1% TO-263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TKH55P25R0FE-TR 445
    • 1 $9.73
    • 10 $8.94
    • 100 $7.1
    • 1000 $6.73
    • 10000 $6.73
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    Winbond Electronics Corp W9425G6KH-5

    DRAM 256Mb DDR SDRAM x16, 200Mhz, 65nm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics W9425G6KH-5 162
    • 1 $2.72
    • 10 $1.95
    • 100 $1.95
    • 1000 $1.55
    • 10000 $1.46
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    Find more KH5 25 price and stock on Findchips.com

    KH5 25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hall sensor 4-pin

    Abstract: hall sensor ic 4pin hall sensor 4pin hall 4 pins KH5 25 OH10009 4 pin hall 6 4 pin hall marking
    Text: GaAs Hall Devices OH10009 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 + 0.2 0.65 ± 0.15 • Features • Hall voltage: typ. 105 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the


    Original     		PDF OH10009 hall sensor 4-pin hall sensor ic 4pin hall sensor 4pin hall 4 pins KH5 25 OH10009 4 pin hall 6 4 pin hall marking

    marking KR 4pin

    Abstract: 4 pin hall marking
    Text: MA111 GaAs Hall Elements OH004 GaAs hall element Unit : mm Magnetic sensor 1.5±0.2 Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Mini type 4-pin package with positioning projection. Automatic


    Original     		PDF MA111 OH004 150mV marking KR 4pin 4 pin hall marking

    hall marking D

    Abstract: No abstract text available
    Text: MA111 GaAs Hall Elements OH010 GaAs hall element Unit : mm Magnetic sensor 1.5±0.2 Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Mini type 4-pin package with positioning projection. Automatic


    Original     		PDF MA111 OH010 105mV hall marking D

    hall sensor 4-pin

    Abstract: hall sensor 4pin 4pin hall sensor hall sensor ic 4pin 4 pin hall sensor hall 4pin 4pin hall hall hall 4 pins hall 9
    Text: GaAs Hall Devices OH10010 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor VCR, phonograph, VD, CD, and FDD • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.)


    Original     		PDF OH10010 hall sensor 4-pin hall sensor 4pin 4pin hall sensor hall sensor ic 4pin 4 pin hall sensor hall 4pin 4pin hall hall hall 4 pins hall 9

    OH003

    Abstract: 4 pin hall marking marking KR 4pin hall sensor 3hr hall ic 4pin ir 142 oh-003 4pin hall sensor
    Text: MA111 GaAs Hall Elements OH003 GaAs hall element Unit : mm +0.2 Magnetic sensor 2.8 –0.3 +0.2 1.5 –0.3 0.65±0.15 • Features 0.65±0.15 Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Sealed in the Mini type 4-pin package. Automatic insertion through


    Original     		PDF MA111 OH003 150mV OH003 4 pin hall marking marking KR 4pin hall sensor 3hr hall ic 4pin ir 142 oh-003 4pin hall sensor

    OH009

    Abstract: hall current sensor ic 4pin Hall
    Text: MA111 GaAs Hall Elements OH009 GaAs hall element Unit : mm +0.2 Magnetic sensor 2.8 –0.3 +0.2 1.5 –0.3 0.65±0.15 • Features 0.65±0.15 Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Sealed in the Mini type 4-pin package. Automatic insertion through


    Original     		PDF MA111 OH009 105mV OH009 hall current sensor ic 4pin Hall

    hall sensor 4-pin

    Abstract: KH5 25 hall OH10008 hall sensor 4pin 4 pin hall sensor hall 4 pins 4 pin package hall sensor hall ic 4pin
    Text: GaAs Hall Devices OH10008 GaAs Hall Device Unit : mm 1.45 ± 0.05 0.9 ± 0.05 • Features • Hall voltage: typ. 105 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field


    Original     		PDF OH10008 hall sensor 4-pin KH5 25 hall OH10008 hall sensor 4pin 4 pin hall sensor hall 4 pins 4 pin package hall sensor hall ic 4pin

    hall sensor 3hr

    Abstract: hall sensor 4-pin phonograph hall sensor 4pin marking KR 4pin 4 pin hall marking OH10003 4 pin hall marking R
    Text: GaAs Hall Devices OH10003 GaAs Hall Device Magnetic sensor Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 • Features • Hall voltage: typ. 150 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the


    Original     		PDF OH10003 hall sensor 3hr hall sensor 4-pin phonograph hall sensor 4pin marking KR 4pin 4 pin hall marking OH10003 4 pin hall marking R

    hall sensor 4pin

    Abstract: marking KR 4pin hall 4hr 4 pin hall marking R 4HR hall 4pin hall sensor OH10004 4 pin hall 6 hall ic 4pin 4pin hall
    Text: GaAs Hall Devices OH10004 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor VCR, phonograph, VD, CD, and FDD • Automotive equipment • Industrial equipment Symbol Rating Unit Control voltage


    Original     		PDF OH10004 hall sensor 4pin marking KR 4pin hall 4hr 4 pin hall marking R 4HR hall 4pin hall sensor OH10004 4 pin hall 6 hall ic 4pin 4pin hall

    OH008

    Abstract: 4pin hall sensor hall sensor ic 4pin hall ic 4pin hall sensor 4pin
    Text: MA111 GaAs Hall Elements OH008 GaAs hall element Unit : mm ● Input resistance : typ. 0.75kΩ 3 2 0.6±0.1 0.8±0.1 2.85±0.25 ● Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C


    Original     		PDF MA111 OH008 105mV OH008 4pin hall sensor hall sensor ic 4pin hall ic 4pin hall sensor 4pin

    4G2 hall

    Abstract: OH003 hall sensor 3hr OH10003 hall sensor Panasonic GaAs hall sensor TYP 688
    Text: GaAs Hall Devices OH10003 OH003 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ


    Original     		PDF OH10003 OH003) 4G2 hall OH003 hall sensor 3hr OH10003 hall sensor Panasonic GaAs hall sensor TYP 688

    OH004

    Abstract: OH10004 hall sensor Panasonic GaAs marking KR 4pin panasonic device marking examples
    Text: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 4 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ


    Original     		PDF OH10004 OH004) OH004 OH10004 hall sensor Panasonic GaAs marking KR 4pin panasonic device marking examples

    OH010

    Abstract: OH10010 hall sensor 4pin
    Text: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.)


    Original     		PDF OH10010 OH010) OH010 OH10010 hall sensor 4pin

    OH008

    Abstract: OH10008 hall sensor Panasonic GaAs
    Text: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm 1.45 ± 0.05 0.9 ± 0.05 • Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field


    Original     		PDF OH10008 OH008) OH008 OH10008 hall sensor Panasonic GaAs

    hall sensor Panasonic GaAs

    Abstract: OH10010 OH010
    Text: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ


    Original     		PDF OH10010 OH010) hall sensor Panasonic GaAs OH10010 OH010

    4G2 hall

    Abstract: hall sensor Panasonic GaAs OH009 OH10009
    Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ


    Original     		PDF OH10009 OH009) 4G2 hall hall sensor Panasonic GaAs OH009 OH10009

    OH009

    Abstract: OH10009 hall sensor Panasonic GaAs 4pin hall sensor
    Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 + 0.2 0.65 ± 0.15 • Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the


    Original     		PDF OH10009 OH009) OH009 OH10009 hall sensor Panasonic GaAs 4pin hall sensor

    panasonic device marking examples

    Abstract: hall sensor 40 L
    Text: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.26±0.05 0.9±0.05 4 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)


    Original     		PDF OH10004 OH004) panasonic device marking examples hall sensor 40 L

    hall sensor 40 L

    Abstract: No abstract text available
    Text: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.26±0.05 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ


    Original     		PDF OH10010 OH010) hall sensor 40 L

    OH008

    Abstract: OH10008
    Text: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 M Di ain sc te on na tin nc ue e/ d 0.6±0.1 4 0 to 0.15 nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo


    Original     		PDF OH10008 OH008) OH008 OH10008

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type 200mW Surface Mount Zener Diode MMBZ5245BW Features Planar Die Construction General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage Symbol Rating Unit VF 0.9


    Original     		PDF 200mW MMBZ5245BW

    hall sensor 40 L

    Abstract: No abstract text available
    Text: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.6±0.05 0.26±0.05 0.9±0.05 4 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)


    Original     		PDF OH10008 OH008) hall sensor 40 L

    hall sensor 40 L

    Abstract: No abstract text available
    Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° M Di ain sc te on na tin nc ue e/ d R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)


    Original     		PDF OH10009 OH009) hall sensor 40 L

    4G2 hall

    Abstract: OH009 OH10009
    Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ


    Original     		PDF OH10009 OH009) 4G2 hall OH009 OH10009