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Winbond Electronics Corp W9825G6KH-5 DRAM 256Mb SDR SDRAM x16, 200MHz
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Mouser Electronics	W9825G6KH-5		2,367			1 $2.32 10 $1.92 100 $1.92 1000 $1.62 10000 $1.47	Buy Now
Littelfuse Inc HQ6025KH5TP Triacs HT Altnstr 600V 25A 50-50-50 mA TO218Iso
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Mouser Electronics	HQ6025KH5TP		493			1 $7.25 10 $7.25 100 $4.89 1000 $4.88 10000 $4.88	Buy Now
Ohmite Mfg Co TKH55P25R0FE-TR Thick Film Resistors - SMD 55W 25ohms 1% TO-263
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Mouser Electronics	TKH55P25R0FE-TR		433			1 $9.73 10 $8.94 100 $7.1 1000 $6.73 10000 $6.73	Buy Now
Winbond Electronics Corp W9425G6KH-5 DRAM 256Mb DDR SDRAM x16, 200Mhz, 65nm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	W9425G6KH-5		162			1 $2.37 10 $1.96 100 $1.96 1000 $1.62 10000 $1.49	Buy Now
Winbond Electronics Corp W9425G6KH-5I DRAM 256Mb DDR SDRAM x16, 200Mhz, Ind temp
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Mouser Electronics	W9425G6KH-5I		3			1 $2.43 10 $2 100 $2 1000 $1.66 10000 $1.54	Buy Now

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KH5 25 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
hall sensor 4-pin Abstract: hall sensor ic 4pin hall sensor 4pin hall 4 pins KH5 25 OH10009 4 pin hall 6 4 pin hall marking Text: GaAs Hall Devices OH10009 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 + 0.2 0.65 ± 0.15 • Features • Hall voltage: typ. 105 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the	Original	OH10009 hall sensor 4-pin hall sensor ic 4pin hall sensor 4pin hall 4 pins KH5 25 OH10009 4 pin hall 6 4 pin hall marking	PDF
marking KR 4pin Abstract: 4 pin hall marking Text: MA111 GaAs Hall Elements OH004 GaAs hall element Unit : mm Magnetic sensor 1.5±0.2 Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Mini type 4-pin package with positioning projection. Automatic	Original	MA111 OH004 150mV marking KR 4pin 4 pin hall marking	PDF
hall marking D Abstract: No abstract text available Text: MA111 GaAs Hall Elements OH010 GaAs hall element Unit : mm Magnetic sensor 1.5±0.2 Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Mini type 4-pin package with positioning projection. Automatic	Original	MA111 OH010 105mV hall marking D	PDF
hall sensor 4-pin Abstract: hall sensor 4pin 4pin hall sensor hall sensor ic 4pin 4 pin hall sensor hall 4pin 4pin hall hall hall 4 pins hall 9 Text: GaAs Hall Devices OH10010 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor VCR, phonograph, VD, CD, and FDD • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.)	Original	OH10010 hall sensor 4-pin hall sensor 4pin 4pin hall sensor hall sensor ic 4pin 4 pin hall sensor hall 4pin 4pin hall hall hall 4 pins hall 9	PDF
OH003 Abstract: 4 pin hall marking marking KR 4pin hall sensor 3hr hall ic 4pin ir 142 oh-003 4pin hall sensor Text: MA111 GaAs Hall Elements OH003 GaAs hall element Unit : mm +0.2 Magnetic sensor 2.8 –0.3 +0.2 1.5 –0.3 0.65±0.15 • Features 0.65±0.15 Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Sealed in the Mini type 4-pin package. Automatic insertion through	Original	MA111 OH003 150mV OH003 4 pin hall marking marking KR 4pin hall sensor 3hr hall ic 4pin ir 142 oh-003 4pin hall sensor	PDF
OH009 Abstract: hall current sensor ic 4pin Hall Text: MA111 GaAs Hall Elements OH009 GaAs hall element Unit : mm +0.2 Magnetic sensor 2.8 –0.3 +0.2 1.5 –0.3 0.65±0.15 • Features 0.65±0.15 Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Sealed in the Mini type 4-pin package. Automatic insertion through	Original	MA111 OH009 105mV OH009 hall current sensor ic 4pin Hall	PDF
hall sensor 4-pin Abstract: KH5 25 hall OH10008 hall sensor 4pin 4 pin hall sensor hall 4 pins 4 pin package hall sensor hall ic 4pin Text: GaAs Hall Devices OH10008 GaAs Hall Device Unit : mm 1.45 ± 0.05 0.9 ± 0.05 • Features • Hall voltage: typ. 105 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field	Original	OH10008 hall sensor 4-pin KH5 25 hall OH10008 hall sensor 4pin 4 pin hall sensor hall 4 pins 4 pin package hall sensor hall ic 4pin	PDF
hall sensor 3hr Abstract: hall sensor 4-pin phonograph hall sensor 4pin marking KR 4pin 4 pin hall marking OH10003 4 pin hall marking R Text: GaAs Hall Devices OH10003 GaAs Hall Device Magnetic sensor Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 • Features • Hall voltage: typ. 150 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the	Original	OH10003 hall sensor 3hr hall sensor 4-pin phonograph hall sensor 4pin marking KR 4pin 4 pin hall marking OH10003 4 pin hall marking R	PDF
hall sensor 4pin Abstract: marking KR 4pin hall 4hr 4 pin hall marking R 4HR hall 4pin hall sensor OH10004 4 pin hall 6 hall ic 4pin 4pin hall Text: GaAs Hall Devices OH10004 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor VCR, phonograph, VD, CD, and FDD • Automotive equipment • Industrial equipment Symbol Rating Unit Control voltage	Original	OH10004 hall sensor 4pin marking KR 4pin hall 4hr 4 pin hall marking R 4HR hall 4pin hall sensor OH10004 4 pin hall 6 hall ic 4pin 4pin hall	PDF
OH008 Abstract: 4pin hall sensor hall sensor ic 4pin hall ic 4pin hall sensor 4pin Text: MA111 GaAs Hall Elements OH008 GaAs hall element Unit : mm ● Input resistance : typ. 0.75kΩ 3 2 0.6±0.1 0.8±0.1 2.85±0.25 ● Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C	Original	MA111 OH008 105mV OH008 4pin hall sensor hall sensor ic 4pin hall ic 4pin hall sensor 4pin	PDF
4G2 hall Abstract: OH003 hall sensor 3hr OH10003 hall sensor Panasonic GaAs hall sensor TYP 688 Text: GaAs Hall Devices OH10003 OH003 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ	Original	OH10003 OH003) 4G2 hall OH003 hall sensor 3hr OH10003 hall sensor Panasonic GaAs hall sensor TYP 688	PDF
OH004 Abstract: OH10004 hall sensor Panasonic GaAs marking KR 4pin panasonic device marking examples Text: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 4 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ	Original	OH10004 OH004) OH004 OH10004 hall sensor Panasonic GaAs marking KR 4pin panasonic device marking examples	PDF
OH010 Abstract: OH10010 hall sensor 4pin Text: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.)	Original	OH10010 OH010) OH010 OH10010 hall sensor 4pin	PDF
OH008 Abstract: OH10008 hall sensor Panasonic GaAs Text: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm 1.45 ± 0.05 0.9 ± 0.05 • Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field	Original	OH10008 OH008) OH008 OH10008 hall sensor Panasonic GaAs	PDF

hall sensor Panasonic GaAs Abstract: OH10010 OH010 Text: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ	Original	OH10010 OH010) hall sensor Panasonic GaAs OH10010 OH010	PDF
4G2 hall Abstract: hall sensor Panasonic GaAs OH009 OH10009 Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ	Original	OH10009 OH009) 4G2 hall hall sensor Panasonic GaAs OH009 OH10009	PDF
OH009 Abstract: OH10009 hall sensor Panasonic GaAs 4pin hall sensor Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 + 0.2 0.65 ± 0.15 • Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the	Original	OH10009 OH009) OH009 OH10009 hall sensor Panasonic GaAs 4pin hall sensor	PDF
panasonic device marking examples Abstract: hall sensor 40 L Text: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.26±0.05 0.9±0.05 4 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)	Original	OH10004 OH004) panasonic device marking examples hall sensor 40 L	PDF
hall sensor 40 L Abstract: No abstract text available Text: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.26±0.05 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ	Original	OH10010 OH010) hall sensor 40 L	PDF
OH008 Abstract: OH10008 Text: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 M Di ain sc te on na tin nc ue e/ d 0.6±0.1 4 0 to 0.15 nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo	Original	OH10008 OH008) OH008 OH10008	PDF
Untitled Abstract: No abstract text available Text: Diodes SMD Type 200mW Surface Mount Zener Diode MMBZ5245BW Features Planar Die Construction General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage Symbol Rating Unit VF 0.9	Original	200mW MMBZ5245BW	PDF
hall sensor 40 L Abstract: No abstract text available Text: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.6±0.05 0.26±0.05 0.9±0.05 4 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)	Original	OH10008 OH008) hall sensor 40 L	PDF
hall sensor 40 L Abstract: No abstract text available Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° M Di ain sc te on na tin nc ue e/ d R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)	Original	OH10009 OH009) hall sensor 40 L	PDF
4G2 hall Abstract: OH009 OH10009 Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ	Original	OH10009 OH009) 4G2 hall OH009 OH10009	PDF

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KH5 25 Search Results

KH5 25 Price and Stock

Winbond Electronics Corp W9825G6KH-5

Littelfuse Inc HQ6025KH5TP

Ohmite Mfg Co TKH55P25R0FE-TR

Winbond Electronics Corp W9425G6KH-5

Winbond Electronics Corp W9425G6KH-5I

KH5 25 Datasheets Context Search

hall sensor 4-pin

marking KR 4pin

hall marking D

hall sensor 4-pin

OH003

OH009

hall sensor 4-pin

hall sensor 3hr

hall sensor 4pin

OH008

4G2 hall

OH004

OH010

OH008

hall sensor Panasonic GaAs

4G2 hall

OH009

panasonic device marking examples

hall sensor 40 L

OH008

Untitled

hall sensor 40 L

hall sensor 40 L

4G2 hall