BV-1 501
Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1
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LTC1150
LTC1150
5e-12
5e-11
2857E-11
65e-11
7124E-04
3e-11
9605e-8
74902E-10
BV-1 501
BF-960 spice model
LT1715 spice model
Transistor TT 2246
cd 6283 ic
transistor KF 507
LT1716 spice model
COMP1016
lt6234 spice model
AUO-11307 R01
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c124 npn
Abstract: transistor NPN C124 OPA623X2 transisTOR C124 c124 transistor C121 C124 C202 C203 C206
Text: * OPA623X2 WIDE BANDWIDTH, CURRENT FEEDBACK, MACROMODEL, COMPLEX VERSION * * CREATED 8/92 KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;
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OPA623X2
029E-12
017E-12
050E-12
80E-12
00E-12
1567E-16
272E-3
67E-3
248E-20
c124 npn
transistor NPN C124
transisTOR C124
c124 transistor
C121
C124
C202
C203
C206
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transistor NPN C124
Abstract: transisTOR C124 c124 transistor transistor PNP C124 c124 npn 50E3 C201 C202 C203 C205
Text: * OPA660X2 = MDB + MDT + MBC OPERATIONAL TRANSCONDUCTANCE AMPLIFIER * AND BUFFER COMPLEX MACROMODEL VERSION * CREATED 8/92 KL * REV.A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;
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OPA660X2
272E-3
67E-3
248E-20
040E-18
683E-3
029E-12
017E-12
050E-12
80E-12
transistor NPN C124
transisTOR C124
c124 transistor
transistor PNP C124
c124 npn
50E3
C201
C202
C203
C205
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PDF
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c124 npn
Abstract: transistor NPN C124 TRANSISTOR BC 1366 c124 transistor C2099 transistor c124 C203 C204 C208 C209
Text: * OPA622X2 WIDE-BANDWIDTH OPERATIONAL AMPLIFIER MACROMODEL COMPLEX VERSION * * CREATED 8/92 BY KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;
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Original
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OPA622X2
029E-12
017E-12
050E-12
80E-12
00E-12
1567E-16
272E-3
67E-3
248E-20
c124 npn
transistor NPN C124
TRANSISTOR BC 1366
c124 transistor
C2099
transistor c124
C203
C204
C208
C209
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vqe 24 d
Abstract: vqe 24 e DIODE BZ s2e transistor VQE 24
Text: •T-3< -3 f F 6 - 50 R 12 KF EUPEC SEE T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1200 V 50 A •c m 34032*17 Q0G0275 2^7 «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module
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T-34-3/
34G3217
Q0G0275
vqe 24 d
vqe 24 e
DIODE BZ
s2e transistor
VQE 24
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EUPEC tt 93 n
Abstract: 1BW TRANSISTOR EUPEC
Text: T - 3 ? - 3 / FF 150 R 06 KF SSE EUPEC ]> 3 4 0 3 2 1 ? 0 0 Q0 2 H2 Thermische Eigenschaften Transistor Transistor • Electrical properties Höchstzulässiae Werte V ces Maximum rated values 600 V 150 A RthCK le Thermal properties DC, pro Baustein / per module
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OCR Scan
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G0Q02H2
34D32CI7
EUPEC tt 93 n
1BW TRANSISTOR
EUPEC
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1BW TRANSISTOR
Abstract: diode sg 5 ts
Text: EUPEC 5 2 E J> FF 100 R 06 KF 34032^7 m 0000212 003 «UPEC 7 = 3 9 - 3 / Thermische Eigenschaften Transistor Transistor Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 100 A RthCK le Thermal properties
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34D32CI7
1BW TRANSISTOR
diode sg 5 ts
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Untitled
Abstract: No abstract text available
Text: •T-3< -3 f F 6 - 50 R12 KF E U P E C S E E T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Maximum rated values 1200 V 50 A V ces 3 4 0 3 2 *1 7 m Q 0 G 0 2 7 5 « U P E C Thermische Eigenschaften Thermal properties
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Untitled
Abstract: No abstract text available
Text: EUPEC SEE » F 6 - 50 R 06 KF Transistor Transistor Thermische Eigenschaften Elektrische Eigenschaften Electrical properties Höchstzulässioe Werte Maximum rated values 600 V 50 A V ces Thermal properties 150 - 4 0 / + 150 - 4 0 / + 125 tyjmax •c 0,14 °C/W
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transistor m1 sS 125
Abstract: No abstract text available
Text: - r - 3 f - S F 6 -1 0 0 R 06 KF EUPEC SEE » 34032^7 D G aaa? G bT Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Maximum rated values 600 U PEC 100 A 150 - 4 0 /+ 150 - 4 0 / + 125 tvjo p ts tg Icrm tp = 1ms 200 A P,ot
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diode sg 5 ts
Abstract: 1BW TRANSISTOR EUPEC tt 93 n
Text: - r - 3 f- S F 6 - 100 R 06 KF EUPEC SEE » m Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 100 A •c DGaaa? GbT • UPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module
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34D32CI7
diode sg 5 ts
1BW TRANSISTOR
EUPEC tt 93 n
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cupec
Abstract: No abstract text available
Text: 1 =3 9 - 3 ! F 6 - 75 R 06 KF 52E CUPEC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 75 A V ces D • 34032^7 □□□□E7b ■UPEC Thermische Eigenschaften Thermal properties Rthjc
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Untitled
Abstract: No abstract text available
Text: 7 ^ - 3 / F 6 - 25 R 12 KF EUPEC SEE T> Transistor Transistor 34032=17 0000273 414 « U P E C Thermische Eigenschaften *thjc Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties 0,104 °C/W
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Untitled
Abstract: No abstract text available
Text: ’ 733 ^ " 3/ F 6 -1 5 R 06 KF SSE EUPEC Transistor 34032^7 D Transistor Thermische Eigenschaften RthJC Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 15 A V CES ÜÜ Ü G2b T 'H S BIUPEC Thermal properties
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transistor 1BW 57
Abstract: IGBT EUPEC
Text: FF 200 R 06 KF EUPEC S2E ]> G G 00232 TTl •UPEC Thermische Eigenschaften Thermal properties 0,08 °C/W Rthjc DC, pro Baustein / per module 0,16 °C/W DC, pro Zweig / per arm 0,03 °C/W RthCK pro Baustein/per module 0,06 °C/W Transistor Transistor Elektrische Eigenschaften
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GGG0232
transistor 1BW 57
IGBT EUPEC
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DIODE BZ
Abstract: EUPEC tt 95 n t93 eupec transistor r06 BU 500 DT
Text: ’7 3 3 ^ " 3 / F 6 -1 5 R 06 KF SSE EUPEC Transistor D Transistor 34032^7 Thermische Eigenschaften RthJC Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 600 V 15 A le ÜÜ Ü G2b T 'H S BIUPEC Thermal properties
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150AVP
Abstract: cupec
Text: 1 =3 9 - 3 ! F 6 - 75 R 06 KF 52E CUPEC Transistor Transistor ]> • 34032^7 Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values 600 V 75 A le □□□□27b 123 HUPEC Thermal properties
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34032T7
34D32CI7
150AVP
cupec
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1BW TRANSISTOR
Abstract: No abstract text available
Text: 7=3 4’ 3 / FF 75 R 06 KF EUPEC S5E 34035^7 Rthjc Elektrische Eigenschaften 00Q 02G 5 Thermische Eigenschaften Transistor Transistor D Electrical properties RthCK 1 b 1! MUREC Thermal properties 0,175 °C/W 0,35 °C/W 0,06 °C/W 0,12 °C/W DC, pro Baustein / per module
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00Q02G5
34D32CI7
1BW TRANSISTOR
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1BW TRANSISTOR
Abstract: transistor 1BW 57 VQE 23 E VQE 23 F FTFH
Text: EUPEC SEE » • 34032^7 Q D D D l^ E ? 4 C15 ■ UPEC FF 50 R 06 KF 7^3 9 - 3 ! Thermische Eigenschaften Transistor Itansistor Rthjc Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 50 A Rthcx lc Thermal properties 0,25 °C/W
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34D32CI7
1BW TRANSISTOR
transistor 1BW 57
VQE 23 E
VQE 23 F
FTFH
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1BW TRANSISTOR
Abstract: transistor bw 51 transistor 1BW 25
Text: 7 ^ -3 / F 6 - 25 R12 KF EUPEC SEE Transistor T> Transistor 34032=17 0 000 273 Thermische Eigenschaften *thjc Elektrische Eigenschaften 414 « U P E C Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties 0,104 °C/W
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D0D0273
34D32CI7
1BW TRANSISTOR
transistor bw 51
transistor 1BW 25
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1BW TRANSISTOR
Abstract: F400R12KF
Text: * 7 ^ 3 9 - 3 / F 40 0R 1 2K F ’ EU P E C S5E D • 3M 03ET7 b3T ■ UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein /p er module 0,052 RthJC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte
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F400R12KF
3M03ET7
00002b2
34D32CI7
1BW TRANSISTOR
F400R12KF
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R1100
Abstract: F 300 R 1200 KF
Text: T - 3 9 - Z t F 3 0 0 R 12 K L SEE EU P EC T> m 3403217 335 «UPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,062 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe Werte V ces
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34D32CI7
R1100
F 300 R 1200 KF
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LN800
Abstract: C2E1 F400 diode f400
Text: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties
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D0DD25fl
34D32CI7
LN800
C2E1
F400
diode f400
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1BW TRANSISTOR
Abstract: No abstract text available
Text: T 3 9 -3 / FF 50 R 06 KL SE E EU P E C • 3M G 32T7 0 0 0 0 ^4 E b fi HUPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p e r module DC, pro Zwelg / per arm RthCK pro Baustein/per module pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften
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34D32CI7
1BW TRANSISTOR
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PDF
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