Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KF 124 TRANSISTOR Search Results

    KF 124 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    KF 124 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BV-1 501

    Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
    Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1


    Original     		PDF LTC1150 LTC1150 5e-12 5e-11 2857E-11 65e-11 7124E-04 3e-11 9605e-8 74902E-10 BV-1 501 BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01

    c124 npn

    Abstract: transistor NPN C124 OPA623X2 transisTOR C124 c124 transistor C121 C124 C202 C203 C206
    Text: * OPA623X2 WIDE BANDWIDTH, CURRENT FEEDBACK, MACROMODEL, COMPLEX VERSION * * CREATED 8/92 KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


    Original     		PDF OPA623X2 029E-12 017E-12 050E-12 80E-12 00E-12 1567E-16 272E-3 67E-3 248E-20 c124 npn transistor NPN C124 transisTOR C124 c124 transistor C121 C124 C202 C203 C206

    transistor NPN C124

    Abstract: transisTOR C124 c124 transistor transistor PNP C124 c124 npn 50E3 C201 C202 C203 C205
    Text: * OPA660X2 = MDB + MDT + MBC OPERATIONAL TRANSCONDUCTANCE AMPLIFIER * AND BUFFER COMPLEX MACROMODEL VERSION * CREATED 8/92 KL * REV.A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


    Original     		PDF OPA660X2 272E-3 67E-3 248E-20 040E-18 683E-3 029E-12 017E-12 050E-12 80E-12 transistor NPN C124 transisTOR C124 c124 transistor transistor PNP C124 c124 npn 50E3 C201 C202 C203 C205

    c124 npn

    Abstract: transistor NPN C124 TRANSISTOR BC 1366 c124 transistor C2099 transistor c124 C203 C204 C208 C209
    Text: * OPA622X2 WIDE-BANDWIDTH OPERATIONAL AMPLIFIER MACROMODEL COMPLEX VERSION * * CREATED 8/92 BY KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


    Original     		PDF OPA622X2 029E-12 017E-12 050E-12 80E-12 00E-12 1567E-16 272E-3 67E-3 248E-20 c124 npn transistor NPN C124 TRANSISTOR BC 1366 c124 transistor C2099 transistor c124 C203 C204 C208 C209

    vqe 24 d

    Abstract: vqe 24 e DIODE BZ s2e transistor VQE 24
    Text: •T-3< -3 f F 6 - 50 R 12 KF EUPEC SEE T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1200 V 50 A •c m 34032*17 Q0G0275 2^7 «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module


    OCR Scan     		PDF T-34-3/ 34G3217 Q0G0275 vqe 24 d vqe 24 e DIODE BZ s2e transistor VQE 24

    EUPEC tt 93 n

    Abstract: 1BW TRANSISTOR EUPEC
    Text: T - 3 ? - 3 / FF 150 R 06 KF SSE EUPEC ]> 3 4 0 3 2 1 ? 0 0 Q0 2 H2 Thermische Eigenschaften Transistor Transistor • Electrical properties Höchstzulässiae Werte V ces Maximum rated values 600 V 150 A RthCK le Thermal properties DC, pro Baustein / per module


    OCR Scan     		PDF G0Q02H2 34D32CI7 EUPEC tt 93 n 1BW TRANSISTOR EUPEC

    1BW TRANSISTOR

    Abstract: diode sg 5 ts
    Text: EUPEC 5 2 E J> FF 100 R 06 KF 34032^7 m 0000212 003 «UPEC 7 = 3 9 - 3 / Thermische Eigenschaften Transistor Transistor Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 100 A RthCK le Thermal properties


    OCR Scan     		PDF 34D32CI7 1BW TRANSISTOR diode sg 5 ts

    Untitled

    Abstract: No abstract text available
    Text: •T-3< -3 f F 6 - 50 R12 KF E U P E C S E E T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Maximum rated values 1200 V 50 A V ces 3 4 0 3 2 *1 7 m Q 0 G 0 2 7 5 « U P E C Thermische Eigenschaften Thermal properties


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: EUPEC SEE » F 6 - 50 R 06 KF Transistor Transistor Thermische Eigenschaften Elektrische Eigenschaften Electrical properties Höchstzulässioe Werte Maximum rated values 600 V 50 A V ces Thermal properties 150 - 4 0 / + 150 - 4 0 / + 125 tyjmax •c 0,14 °C/W


    OCR Scan     		PDF

    transistor m1 sS 125

    Abstract: No abstract text available
    Text: - r - 3 f - S F 6 -1 0 0 R 06 KF EUPEC SEE » 34032^7 D G aaa? G bT Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Maximum rated values 600 U PEC 100 A 150 - 4 0 /+ 150 - 4 0 / + 125 tvjo p ts tg Icrm tp = 1ms 200 A P,ot


    OCR Scan     		PDF

    diode sg 5 ts

    Abstract: 1BW TRANSISTOR EUPEC tt 93 n
    Text: - r - 3 f- S F 6 - 100 R 06 KF EUPEC SEE » m Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 100 A •c DGaaa? GbT • UPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module


    OCR Scan     		PDF 34D32CI7 diode sg 5 ts 1BW TRANSISTOR EUPEC tt 93 n

    cupec

    Abstract: No abstract text available
    Text: 1 =3 9 - 3 ! F 6 - 75 R 06 KF 52E CUPEC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 75 A V ces D • 34032^7 □□□□E7b ■UPEC Thermische Eigenschaften Thermal properties Rthjc


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ - 3 / F 6 - 25 R 12 KF EUPEC SEE T> Transistor Transistor 34032=17 0000273 414 « U P E C Thermische Eigenschaften *thjc Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties 0,104 °C/W


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ’ 733 ^ " 3/ F 6 -1 5 R 06 KF SSE EUPEC Transistor 34032^7 D Transistor Thermische Eigenschaften RthJC Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 15 A V CES ÜÜ Ü G2b T 'H S BIUPEC Thermal properties


    OCR Scan     		PDF

    transistor 1BW 57

    Abstract: IGBT EUPEC
    Text: FF 200 R 06 KF EUPEC S2E ]> G G 00232 TTl •UPEC Thermische Eigenschaften Thermal properties 0,08 °C/W Rthjc DC, pro Baustein / per module 0,16 °C/W DC, pro Zweig / per arm 0,03 °C/W RthCK pro Baustein/per module 0,06 °C/W Transistor Transistor Elektrische Eigenschaften


    OCR Scan     		PDF GGG0232 transistor 1BW 57 IGBT EUPEC

    DIODE BZ

    Abstract: EUPEC tt 95 n t93 eupec transistor r06 BU 500 DT
    Text: ’7 3 3 ^ " 3 / F 6 -1 5 R 06 KF SSE EUPEC Transistor D Transistor 34032^7 Thermische Eigenschaften RthJC Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 600 V 15 A le ÜÜ Ü G2b T 'H S BIUPEC Thermal properties


    OCR Scan     		PDF

    150AVP

    Abstract: cupec
    Text: 1 =3 9 - 3 ! F 6 - 75 R 06 KF 52E CUPEC Transistor Transistor ]> • 34032^7 Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values 600 V 75 A le □□□□27b 123 HUPEC Thermal properties


    OCR Scan     		PDF 34032T7 34D32CI7 150AVP cupec

    1BW TRANSISTOR

    Abstract: No abstract text available
    Text: 7=3 4’ 3 / FF 75 R 06 KF EUPEC S5E 34035^7 Rthjc Elektrische Eigenschaften 00Q 02G 5 Thermische Eigenschaften Transistor Transistor D Electrical properties RthCK 1 b 1! MUREC Thermal properties 0,175 °C/W 0,35 °C/W 0,06 °C/W 0,12 °C/W DC, pro Baustein / per module


    OCR Scan     		PDF 00Q02G5 34D32CI7 1BW TRANSISTOR

    1BW TRANSISTOR

    Abstract: transistor 1BW 57 VQE 23 E VQE 23 F FTFH
    Text: EUPEC SEE » • 34032^7 Q D D D l^ E ? 4 C15 ■ UPEC FF 50 R 06 KF 7^3 9 - 3 ! Thermische Eigenschaften Transistor Itansistor Rthjc Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 50 A Rthcx lc Thermal properties 0,25 °C/W


    OCR Scan     		PDF 34D32CI7 1BW TRANSISTOR transistor 1BW 57 VQE 23 E VQE 23 F FTFH

    1BW TRANSISTOR

    Abstract: transistor bw 51 transistor 1BW 25
    Text: 7 ^ -3 / F 6 - 25 R12 KF EUPEC SEE Transistor T> Transistor 34032=17 0 000 273 Thermische Eigenschaften *thjc Elektrische Eigenschaften 414 « U P E C Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties 0,104 °C/W


    OCR Scan     		PDF D0D0273 34D32CI7 1BW TRANSISTOR transistor bw 51 transistor 1BW 25

    1BW TRANSISTOR

    Abstract: F400R12KF
    Text: * 7 ^ 3 9 - 3 / F 40 0R 1 2K F ’ EU P E C S5E D • 3M 03ET7 b3T ■ UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein /p er module 0,052 RthJC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte


    OCR Scan     		PDF F400R12KF 3M03ET7 00002b2 34D32CI7 1BW TRANSISTOR F400R12KF

    R1100

    Abstract: F 300 R 1200 KF
    Text: T - 3 9 - Z t F 3 0 0 R 12 K L SEE EU P EC T> m 3403217 335 «UPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,062 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe Werte V ces


    OCR Scan     		PDF 34D32CI7 R1100 F 300 R 1200 KF

    LN800

    Abstract: C2E1 F400 diode f400
    Text: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties


    OCR Scan     		PDF D0DD25fl 34D32CI7 LN800 C2E1 F400 diode f400

    1BW TRANSISTOR

    Abstract: No abstract text available
    Text: T 3 9 -3 / FF 50 R 06 KL SE E EU P E C • 3M G 32T7 0 0 0 0 ^4 E b fi HUPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p e r module DC, pro Zwelg / per arm RthCK pro Baustein/per module pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften


    OCR Scan     		PDF 34D32CI7 1BW TRANSISTOR