KDS226
Abstract: MARK C3 SOT23 KDS226 LOT C-312 Marking C3 SOT23 C3-12 C312 marking C3
Text: SEMICONDUCTOR KDS226 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C3 1 2 Item Marking Description Device Mark C3 KDS226 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDS226
OT-23
KDS226
MARK C3 SOT23
KDS226 LOT
C-312
Marking C3 SOT23
C3-12
C312
marking C3
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KDS226
Abstract: KDS226 LOT
Text: SEMICONDUCTOR KDS226 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E B L FEATURES L ・Small Package : SOT-23. D ・Low Forward Voltag : VF=0.9V Typ. . 2 H A 3 G ・Fast Reverse Recovery Time : trr=1.6ns(Typ.). ・Small Total Capacitance : CT=0.9pF(Typ.).
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OT-23.
KDS226
OT-23
100mA
KDS226
KDS226 LOT
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KDS226
Abstract: KDS226 LOT marking C3
Text: SEMICONDUCTOR KDS226 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ᴌSmall Package : SOT-23. E B L L ᴌLow Forward Voltag : VF=0.9V Typ. . 2 A H 1 P VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current
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KDS226
OT-23.
KDS226
KDS226 LOT
marking C3
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS226 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL
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OT-23.
KDS226
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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SOT-23 ZF
Abstract: KDS226 MARKING ZF SOT-23 ZF SOT23
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREAELECTRONICSCO.,LTD. KDS226 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. : SOT-23. : V f =0.9V Typ. . : trr=1.6ns(Typ.). : Cr=0.9pF (Typ.). DIM MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage
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KDS226
OT-23.
100mA
01/zF
SOT-23 ZF
KDS226
MARKING ZF SOT-23
ZF SOT23
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KDS226 LOT
Abstract: KDS226
Text: SEMICONDUCTOR TECHNICAL DATA KDS226 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SOT-23. : V f =0.9V Typ. . : trr=1.6ns(Typ.).
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KDS226
OT-23.
01/xF
KDS226 LOT
KDS226
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