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Abstract: No abstract text available
Text: SEMICONDUCTOR KDS166U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small package : USV. ・Low forward voltage. ・Fast reverse recovery time. ・Small total capacitance. MAXIMUM RATING Ta=25℃ CHARACTERISTIC
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KDS166U
100mA
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KDS166U
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS166U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small package : USV. B ・Low forward voltage. B1 ・Fast reverse recovery time. DIM A A1 B B1 C D G H T 5 2 C A ・Small total capacitance.
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KDS166U
KDS166U
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KDS166U
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS166U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 SC 1 2 Item Marking Description Device Mark SC KDS166U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index
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KDS166U
KDS166U
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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l2501
Abstract: No abstract text available
Text: SEM ICONDUCTOR KDS166U TECHNI CAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • Small package : USV. • Low forward voltage. D5 • Fast reverse recovery time. • Small total capacitance. DIM M ILL IM E T E R S
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KDS166U
l2501
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