diode MARKING A1
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS128U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. TENTATIVE FEATURES ・Low Forward Voltage : VF=0.92V Typ. . ・Fast Reverse Recovery Time : trr=1.6ns(Typ.). ・Small Total Capacitance : CT=2.2pF (Typ.).
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KDS128U
diode MARKING A1
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS128U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking S7 1 0 1 2. Marking 2 3 No. Item Marking Description Device Mark S7 KDS127U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index
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KDS128U
KDS127U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS128U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. TENTATIVE FEATURES ・Low Forward Voltage : VF=0.92V Typ. . ・Fast Reverse Recovery Time : trr=1.6ns(Typ.). ・Small Total Capacitance : CT=2.2pF (Typ.).
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KDS128U
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Abstract: No abstract text available
Text: SEM ICONDUCTOR KDS128U TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. TENTATIVE EATURES • Lo o ra r Voltage : V 0.92V Typ. , • ast Reverse Re overy Time tn- 1.6ns(Typ.). • Small Total Capa itan e CT 2.2p (Typ.).
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OCR Scan
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KDS128U
100mA
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