KDS125U
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS125U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES B B1 Small package : US6. Low forward voltage. DIM A A1 B 1 6 2 5 3 4 A C Small total capacitance. A1 C Fast reverse recovery time. D B1 C
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KDS125U
KDS125U
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Abstract: No abstract text available
Text: SEMICONDUCTOR KDS125U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2008. 9. 11 Revision No : 1 1/2
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KDS125U
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S5 MARKING
Abstract: KDS125U
Text: SEMICONDUCTOR KDS125U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 S5 1 2 3 No. Item Marking Description Device Mark S5 KDS125U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index
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KDS125U
S5 MARKING
KDS125U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS125U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. TENTATIVE FEATURES Small package : US6. Low forward voltage. Fast reverse recovery time. B B1 Small total capacitance. DIM A A1 B 6 2 5 3 4 C A A1 C
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KDS125U
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Text: SEM ICONDUCTOR KDS125U TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • Sm all package : US6. • L ow forw ard voltage. • Fast reverse recovery tim e. • Sm all total capacitance. M A X IM U M R A T IN G T a=25°C
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KDS125U
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