KDJ TRANSISTOR Search Results

KDJ TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

KDJ TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
kdj transistor Abstract: No abstract text available Text: SSM3K12T Under Development TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K12T The information contained herein in subject to change without notice; likewise, product development may be discontinued. Unit in: mm DC-DC Converter High Speed Switching Applications	Original	SSM3K12T kdj transistor	PDF
Untitled Abstract: No abstract text available Text: SSM3K12T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Preliminary SSM3K12T DC-DC Converter High Speed Switching Applications • • Small Package Low ON-resistance • High speed Unit in: mm : Ron = 95 mΩ max (＠VGS = 10 V) : Ron = 145 mΩ (max) (＠VGS = 4.5 V)	Original	SSM3K12T	PDF
Untitled Abstract: No abstract text available Text: SSM3K12T CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category SSM3K12T DC-DC Converter High Speed Switching Applications • • Small Package Low ON-resistance • High speed Unit: mm : Ron = 95 mΩ max (@VGS = 10 V) : Ron = 145 mΩ (max) (@VGS = 4.5 V)	Original	SSM3K12T	PDF
SSM3K12T Abstract: No abstract text available Text: SSM3K12T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K12T DC-DC Converter High Speed Switching Applications • • Small Package Low ON-resistance • High speed Unit in: mm : Ron = 95 mΩ max (＠VGS = 10 V) : Ron = 145 mΩ (max) (＠VGS = 4.5 V)	Original	SSM3K12T SSM3K12T	PDF
Untitled Abstract: No abstract text available Text: SSM3K12T CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category SSM3K12T DC-DC Converter High Speed Switching Applications • • Small Package Low ON-resistance • High speed Unit: mm : Ron = 95 mΩ max (@VGS = 10 V) : Ron = 145 mΩ (max) (@VGS = 4.5 V)	Original	SSM3K12T	PDF
SSM3K12T Abstract: kdj transistor Text: SSM3K12T CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category SSM3K12T DC-DC Converter High Speed Switching Applications • · Small Package Low ON-resistance · High speed Unit: mm : Ron = 95 mΩ max (@VGS = 10 V) : Ron = 145 mΩ (max) (@VGS = 4.5 V)	Original	SSM3K12T SSM3K12T kdj transistor	PDF
Untitled Abstract: No abstract text available Text: SSM3K12T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K12T DC-DC Converter High Speed Switching Applications • • Small Package Low ON-resistance • High speed Unit: mm : Ron = 95 mΩ max (@VGS = 10 V) : Ron = 145 mΩ (max) (@VGS = 4.5 V)	Original	SSM3K12T	PDF
SSM3K12T Abstract: No abstract text available Text: SSM3K12T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K12T DC-DC Converter High Speed Switching Applications • • Small Package Low ON-resistance • High speed Unit: mm : Ron = 95 mΩ max (@VGS = 10 V) : Ron = 145 mΩ (max) (@VGS = 4.5 V)	Original	SSM3K12T SSM3K12T	PDF
220v AC voltage stabilizer schematic diagram Abstract: 11kV breaker control circuit diagram 110 KW motor 11kv 170H1007 price list for bussmann semiconductor fuse 10SP 010 fusetron dual element fnm-5 3PRA 20 HRC fuse gg GEC 10SP 005 Text: Bussmann Circuit Protection Solutions Bussmann ® Worldwide Circuit Protection Solutions World’s leading supplier of fuses and fusible protection systems, Bussmann continues its 88-year history of blazing new trails of innovative technologies. Maker of the industry’s first	Original	88-year 10-02-50M 30-Amp 60-Amp IP-20) 30Amp 60-Amp 10-02-40M 220v AC voltage stabilizer schematic diagram 11kV breaker control circuit diagram 110 KW motor 11kv 170H1007 price list for bussmann semiconductor fuse 10SP 010 fusetron dual element fnm-5 3PRA 20 HRC fuse gg GEC 10SP 005	PDF
diac kr 206 Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE Text: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com	Original	element14 diac kr 206 BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE	PDF
smd code book Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ	Original	OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes	PDF
transistor SMD s72 Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той	Original	OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p	PDF
170M8554 Abstract: bussmann Fuse 450 amps 250 volts max zs FM09 PS Jet 20A 300v fuse Text: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information	Original	0210-55M 170M8554 bussmann Fuse 450 amps 250 volts max zs FM09 PS Jet 20A 300v fuse	PDF
220v AC voltage stabilizer schematic diagram Abstract: FUSE M2 250e 11kV breaker control circuit diagram bussmann Fuse 170L series bussmann semiconductor fuse catalogue arc welder schematic HRC fuse gg GEC relay applications for 6.6kV switchgear ups circuits 170E bussmann Text: Circuit Protection Products for the Electrical Industry New Products for All Markets For product data sheets, visit www.cooper.bussmann.com/products/datasheet.asp Circuit Protection Products for the Electrical Industry Table of Contents RED indicates NEW information	Original	0210-55M 220v AC voltage stabilizer schematic diagram FUSE M2 250e 11kV breaker control circuit diagram bussmann Fuse 170L series bussmann semiconductor fuse catalogue arc welder schematic HRC fuse gg GEC relay applications for 6.6kV switchgear ups circuits 170E bussmann	PDF

Difference between LS, HC, HCT devices Abstract: TC4S69F Small Signal Zener Diod difference between 74ls and 74hc ic TC74HC04 Text: C2MOS Logic TC74HC/HCT Series 9. Precautions in Designing Circuits 9-1 Input Processing 1 Processing of unused gate Inputs of CMOS IC have such a high impedance that the logic level becomes undefined under open conditions. If the input is at an intermediate level, the P-channel and Nchannel transistors both turn on, and excessive supply	OCR Scan	TC74HC/HCT TC74HC08 TC7S32F TC74HC32 TC7S02F TC7SU04F TC74HCU04 TC7S00F TC7S04F TC74HC00 Difference between LS, HC, HCT devices TC4S69F Small Signal Zener Diod difference between 74ls and 74hc ic TC74HC04	PDF
harris 5330 Abstract: No abstract text available Text: HARRIS SEfTICOND SECTOR 33 HARRIS T ' ID E D 1 4302271 0013aS5 M I HA-5330/883 3 r very High Speed Precision Monolithic Sample and Hold Amplifier January 1989 Features Description • This Circuit Is Processed in Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of	OCR Scan	0013aS5 HA-5330/883 Mll-Std883 500ns 10VStep 900ns 11VtoÂ HA-5330/883 20Vp-p, 100kHz harris 5330	PDF
INVP inverter Abstract: No abstract text available Text: October 1989 PRELIMINARY OPEN ASIC DATA SHEET RADIATION TOLERANT LIBRARY MBRT GATE ARRAY SERIES - 2\xJ2 METAL LAYERS MB 0850RT - MB 1300RT - MB 2000RT - MB 2700RT - MB 3200RT MB 4000RT - MB 5000RT - MB 6600RT - MB 7500RT FEATURES ON CHIP SPECIAL FUNCTION - test mode	OCR Scan	0850RT 1300RT 2000RT 2700RT 3200RT 4000RT 5000RT 6600RT 7500RT INVP inverter	PDF
Untitled Abstract: No abstract text available Text: * *C -.s, IPD42S4260 \|aPD42S4260L 262.144x16 Bit Dynamic CMOS DRAM NEC NEC Electronics Inc. ! Preliminary Information October 1991 Description Pin Configuration The jiPD42S4260/L is a fast page dynamic RAM organized as a 262,244 words by 16 bits and designed	OCR Scan	IPD42S4260 aPD42S4260L 144x16 jiPD42S4260/L jiPD42S4260) iPD42S4260L)	PDF