XP1072-BD
Abstract: XP1072-BD-000V ID232 DM6030HK 152.01 VD55
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 4W Power Amplifier 22.0 Small Signal Gain +35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1072-BD
16-Feb-10
MIL-STD-883
XP1072-BD
XP1072-BD-000V
ID232
DM6030HK
152.01
VD55
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PDF
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ka-band transistor
Abstract: P1026-BD 30SPA0553 DM6030HK TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ka-band bare
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2006 - Rev 23-Feb-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1026-BD
23-Feb-07
MIL-STD-883
XP1026-BD-000V
XP1026-BD-EV1
XP1026-BD
ka-band transistor
P1026-BD
30SPA0553
DM6030HK
TS3332LD
XP1026-BD-000V
XP1026-BD-EV1
ka-band bare
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PDF
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P1026
Abstract: P1026-BD 30SPA0553 DM6030HK TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ka-band transistor
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD August 2007 - Rev 30-Aug-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1026-BD
30-Aug-07
MIL-STD-883
XP1026-BD-000V
XP1026-BD-EV1
XP1026-BD
P1026
P1026-BD
30SPA0553
DM6030HK
TS3332LD
XP1026-BD-000V
XP1026-BD-EV1
ka-band transistor
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PDF
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DM6030HK
Abstract: No abstract text available
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD January 2009 - Rev 23-Jan-09 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain 37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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Original
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23-Jan-09
P1073-BD
MIL-STD-883
aBD-000V
XP1073-BD-EV1
XP1073-BD
DM6030HK
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PDF
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ka-band transistor
Abstract: No abstract text available
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD August 2007 - Rev 30-Aug-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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Original
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30-Aug-07
P1026-BD
MIL-STD-883
XP1026-BD-000V
XP1026-BD-EV1
XP1026-BD
ka-band transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2009 - Rev 15-Feb-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1026-BD
15-Feb-09
MIL-STD-883
XP1026-BD-000V
XP1026-BD-EV1
XP1026-BD
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PDF
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max cw 4004
Abstract: XP1026-BD-EV1 30SPA0553 DM6030HK P1026-BD XP1026-BD XP1026-BD-000V ID213
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1026-BD
25-Jan-10
MIL-STD-883
pa026-BD-EV1
XP1026-BD
max cw 4004
XP1026-BD-EV1
30SPA0553
DM6030HK
P1026-BD
XP1026-BD-000V
ID213
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PDF
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P1027
Abstract: P1027-BD ka-band transistor 30SPA0536 DM6030HK XP1027-BD XP1027-BD-000V XP1027-BD-EV1 VG07
Text: 27.0-31.0 GHz GaAs MMIC Power Amplifier P1027-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.5 dBm Saturated Output Power +43.0 dBm Output Third Order Intercept OIP3
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Original
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P1027-BD
25-Jan-10
MIL-STD-883
XP1027-BD
P1027
P1027-BD
ka-band transistor
30SPA0536
DM6030HK
XP1027-BD-000V
XP1027-BD-EV1
VG07
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PDF
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Untitled
Abstract: No abstract text available
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD March 2008 - Rev 08-Mar-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1072-BD
08-Mar-09
MIL-STD-883
XP1072-BD-EV1
XP1072-BD
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PDF
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Untitled
Abstract: No abstract text available
Text: 27.0-31.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2009 - Rev 11-Mar-09 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.5 dBm Saturated Output Power +43.0 dBm Output Third Order Intercept OIP3
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Original
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P1027-BD
11-Mar-09
MIL-STD-883
XP1027-BD-000V
XP1027-BD-EV1
XP1027-BD
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PDF
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Untitled
Abstract: No abstract text available
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD March 2009 - Rev 07-Mar-09 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain 37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1073-BD
07-Mar-09
MIL-STD-883
XP1073-BD-EV1
XP1073-BD
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PDF
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XP1073-BD
Abstract: xp1073 DM6030HK XP107
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1073-BD
16-Feb-10
MIL-STD-883
XP1073-BD
XP1073-BD
xp1073
DM6030HK
XP107
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PDF
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DM6030HK
Abstract: XP1072-BD
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1072-BD January 2009 - Rev 29-Jan-09 Features Ka-Band 4 W Power Amplifier 22.0 Small Signal Gain 35.0 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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Original
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29-Jan-09
P1072-BD
MIL-STD-883
viaBD-000V
XP1072-BD-EV1
XP1072-BD
DM6030HK
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PDF
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BD 139 140
Abstract: P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ID-2250
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2009 - Rev 19-Jan-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1026-BD
19-Jan-09
MIL-STD-883
XP1026-BD-000V
XP1026-BD-EV1
XP1026-BD
BD 139 140
P1026
30SPA0553
DM6030HK
P1026-BD
TS3332LD
XP1026-BD-000V
XP1026-BD-EV1
ID-2250
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PDF
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P1025-BD
Abstract: 30MPA0562 DM6030HK TS3332LD XP1025-BD XP1025-BD-000V ka-band bare
Text: 28.0-31.0 GHz GaAs MMIC Power Amplifier P1025-BD March 2007 - Rev 05-Mar-07 Features Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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Original
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P1025-BD
05-Mar-07
MIL-STD-883
XP1025-BD
XP1025-BD-000V
XP1025-BD-EV1
XP1025-BD
P1025-BD
30MPA0562
DM6030HK
TS3332LD
XP1025-BD-000V
ka-band bare
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PDF
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AV02-0626EN
Abstract: Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16
Text: Ka-band 2W/4W MMIC Power Amplifiers in 7x7mm Low-cost SMT Package By Kohei Fujii and Henrik Morkner White Paper Abstract Power Amplifier Design The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs are described. The amplifier was designed with highly integrated distributed line-based
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Original
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31GHz
33dBm
35dBm
AV02-0626EN
Avago Mounted Amplifiers
ka-band bare
ka band gaas fet Package
Ka-band
1A12
30SPA0536
8A10
2.4ghz 4w
32A16
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PDF
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p1027
Abstract: P1027-BD 30SPA0536 DM6030HK TS3332LD XP1027-BD XP1027-BD-000V XP1027-BD-EV1
Text: 27.0-33.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2007 - Rev 27-Mar-07 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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Original
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P1027-BD
27-Mar-07
MIL-STD-883
XP1027-BD
XP1027-BD-000V
XP1027-BD-EV1
XP1027-BD
p1027
P1027-BD
30SPA0536
DM6030HK
TS3332LD
XP1027-BD-000V
XP1027-BD-EV1
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PDF
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tanaka TS3332LD epoxy
Abstract: XP1073-BD P1073-BD ka-band bare
Text: 33-37 GHz GaAs MMIC Power Amplifier P1073-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 6.5 W Power Amplifier 22 dB Small Signal Gain 37 - 38 dBm Pulsed Saturated Output Power Up to 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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Original
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14-Jul-08
P1073-BD
MIL-STD-883
XP1073-BD-000V
tanaka TS3332LD epoxy
XP1073-BD
ka-band bare
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PDF
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XP1072-BD
Abstract: ka-band bare xp1072-bd-000v P1072-BD XP1072
Text: 33-37 GHz GaAs MMIC Power Amplifier P1072-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 4 W Power Amplifier 22 dB Small Signal Gain 35 - 36 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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Original
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14-Jul-08
P1072-BD
MIL-STD-883
XP1072-BD-000V
XP1072-BD
ka-band bare
xp1072-bd-000v
XP1072
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PDF
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Untitled
Abstract: No abstract text available
Text: MAAP-015016-DIE Ka-Band 4 W Power Amplifier 32 - 38 GHz Rev. V1 Features • Frequency Range: 32 to 38 GHz Small Signal Gain: 18 dB Saturated Power: 37 dBm Power Added Efficiency: 23% 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method
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Original
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MAAP-015016-DIE
MIL-STD-883
MAAP-015016-DIE
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PDF
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tl1431 bclp
Abstract: No abstract text available
Text: h m M TY L X 6 4 3 1 / L X 6 4 3 1 A / L X 6 4 3 1 B M I C R O E L E C T R O N I C S P r e c is io n P r o g r a m m a b l e R e f e r e n c e s P r o d u c t io n KEY D ESCRI PTI o N The LX6431 series precision adjustable three term inal shunt voltage regulators are
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OCR Scan
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LX6431
TL431,
TL431.
RGUFE16.
tl1431 bclp
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PDF
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Ericsson bts installation guide
Abstract: ericsson BTS and antenna installation ericsson BTS GSM 1800 Nokia BTS ericsson bts Technical specification BTS Base Terminal alcatel indoor BTS of ericsson siemens 230 gas discharge tube TNC PROTECTIVE CAP BTS 6000 ericsson
Text: Lightning Protectors Edition 2008/2009 Excellence in Connectivity Solutions Introduction content Introduction page 6 Definitions and terms page 27 Quick selection page 37 Products page 53 Accessories page 129 Application notes page 143 General information
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Original
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PDF
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bare die schottky diode
Abstract: CDB7619-000
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
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Original
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J-STD-020)
200847E
bare die schottky diode
CDB7619-000
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PDF
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CME7660-203
Abstract: metal detector service manual CDP7624-207
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
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Original
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J-STD-020)
200847D
CME7660-203
metal detector service manual
CDP7624-207
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PDF
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