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    KA TRANSISTOR 26 TO 40 GHZ Search Results

    KA TRANSISTOR 26 TO 40 GHZ Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    KA TRANSISTOR 26 TO 40 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TGA2519-SG

    Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
    Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m


    Original     		PDF AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519

    varistor 593 ph 275v

    Abstract: varistor 275 593 ph S20 K275 varistor ABB inverter motor fault code
    Text: CATALOGUE 4.4 www.weidmueller.com Saudi Arabia Serbia Singapore Slovakia Slovenia South Africa Spain Sweden Switzerland Taiwan Thailand Tunisia Turkey Ukraine United Arab Emirates United States Uruguay Uzbekistan Venezuela Vietnam Weidmüller is a leading international provider of solutions


    Original     		PDF 1271290000/01/2011/SMMD varistor 593 ph 275v varistor 275 593 ph S20 K275 varistor ABB inverter motor fault code

    MOSFET J162

    Abstract: j162 MOSFET J147
    Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS04-202RFPP DS04-139RFPP) MOSFET J162 j162 MOSFET J147

    MOSFET J162

    Abstract: J473 MOSFET J147
    Text: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS03-127RFPP MOSFET J162 J473 MOSFET J147

    0203S

    Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
    Text: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS04-139RFPP DS03-127RFPP) 0203S AGRA10XM JESD22-C101A J162 j507 MOSFET J147

    tns capacitors

    Abstract: capacitor F3 037 02 100B120FW500X
    Text: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		PDF AGRA10E IS-95 DS04-196RFPP DS04-096RFPP) tns capacitors capacitor F3 037 02 100B120FW500X

    AGRA10E

    Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
    Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable


    Original     		PDF AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors

    AGR045010

    Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
    Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		PDF AGRA10E AGRA10E IS-95 DS04-096RFPP DS03-161RFPP) AGR045010 AGRA10EU JESD22-C101A RF MOSFET CLASS AB

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 NE32400 transistor NEC 882 p NE24200
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    Original     		PDF NE32400, NE24200 NE32400 NE24200 NE32400 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 transistor NEC 882 p

    HEMT 36 ghz transistor

    Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
    Text: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is a Ka/K band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with


    Original     		PDF EC2827 40GHz EC2827 18GHz 40GHz DSEC28277003 HEMT 36 ghz transistor low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor

    k1357 transistor

    Abstract: K1357 c2335 K4106 nec C1685 transistor siemens b25353 c2335 r transistor c2335 k1117 b25353
    Text: Contents Application and Selector Guides Page 5 9 Applications Capacitor Questionnaire 17 20 General Technical Information 23 Quality 55 DC Capacitors 63 AC Capacitors 143 Mounting Parts Insulating Parts 325 333 Subject Index Symbols and Terms 335 338 1


    Original     		PDF

    K4106

    Abstract: transistor kA2 smd b25353 smd transistor ka2 C3227* transistor B25355 Siemens matsushita b5 VS4200 k2197k4 free transistor equivalent book more pag
    Text: Contents Application and Selector Guides Page 17 9 Applications Capacitor Questionnaire 17 20 General Technical Information 23 Quality 55 DC Capacitors 63 AC Capacitors 143 Mounting Parts Insulating Parts 325 333 Subject Index Symbols and Terms 335 338 1


    Original     		PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    BFG591

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEA TUR ES D ES C R IPTIO N • High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin S O T 223 package. • Low noise figure • High transition frequency


    OCR Scan     		PDF BFG591 voltage929 7110A2b BFG591

    2SC1424

    Abstract: 2SC4090 017 545 71 32 02 2SC2026
    Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 I • SMALL COLLECTOR CAPACITANCE: 1 pF


    OCR Scan     		PDF NE73435) NE734 NE73400) S12S21| 2SC1424 2SC4090 017 545 71 32 02 2SC2026

    HXTR-5103

    Abstract: HXTR-5101 it 5001 HXTR-5001 S21E
    Text: LINEAR POWER TRANSISTOR CHIP COMPONENTS HXTR-5001 CIRCUITS H E W L E T T PACKARD Features INTEGRATED HIGH P1dB LINEAR POWER 23 dBm Typical at 2 GHz 22 dBm Typical at 4 GHz HIGH P1dB GAIN 13.5 dB Typical at 2 GHz 8.0 dB Typical at 4 GHz LOW DISTORTION FOR HYBRID


    OCR Scan     		PDF HXTR-5001 HXTR-5001 HXTR-5103 HXTR-5101 it 5001 S21E

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram

    REGULATOR IC 7804

    Abstract: AN-A007 AVANTEK MSA-0885 7804 regulator AVANTEK AN-A001 AN-A002 Avantek a08 S parameters for ATF 10136 Avantek aft avantek
    Text: M HEW LETT AN-A007: PACKARD 4 g h z Television Receive Only LNB Design Introduction This note describes the design of a modern LNB low noise block converter for the C band (3.7-4.2 GHz) TVRO market. The block converter consists of a low noise amplifier (LNA), a


    OCR Scan     		PDF AN-A007: ATF-10236 ATF-10736 AN-A001: AN-S005: 5091-8825E REGULATOR IC 7804 AN-A007 AVANTEK MSA-0885 7804 regulator AVANTEK AN-A001 AN-A002 Avantek a08 S parameters for ATF 10136 Avantek aft avantek

    CD 1691 CB

    Abstract: NEC 7924 NEC D 986 IC - 7434
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 CD 1691 CB NEC 7924 NEC D 986 IC - 7434

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high m obility electrons. Its excellent low noise and high associated gain make it suitable


    OCR Scan     		PDF NE32400, NE24200 NE32400 NE24200 NE32400

    "MARKING CODE P5"

    Abstract: BFG425W
    Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		PDF BFG425W 125104/00/04/pp12 "MARKING CODE P5" BFG425W

    BFG403W

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		PDF BFG403W 125104/00/04/pp12 BFG403W

    transistor marking 2d ghz

    Abstract: BFG41OW
    Text: DISC RETE S E M IC O N D U C TO R S BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification


    OCR Scan     		PDF BFG410W 125104/00/04/pp12 transistor marking 2d ghz BFG41OW

    nec 151

    Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.


    OCR Scan     		PDF NE32900 NE32900 nec 151 transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor