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    KA BAND GAAS MESFET PACKAGE Search Results

    KA BAND GAAS MESFET PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    KA BAND GAAS MESFET PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80846

    Abstract: 7912 pt 8819 62855 4407 f 4558 ma 8920 pt 2358
    Text: Ka Band Power GaAs MESFET AFM06P2-212, 213 Features 213 Drain • 22 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz Source Source ■ High Power Added Efficiency, 23% Gate Drain Source ■ Broadband Operation, DC–18 GHz ■ 0.25 µm Ti/Pd/Au


    Original     		PDF AFM06P2-212, The131 2/99A 80846 7912 pt 8819 62855 4407 f 4558 ma 8920 pt 2358

    pt 23131

    Abstract: 80846
    Text: Ka Band Power GaAs MESFET Chips AFM06P2-212, AFM06P2-213 Features 213 • 22 dBm Output Power @ 18 GHz Drain Source ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% Source Gate Drain ■ Broadband Operation, DC–18 GHz Source ■ 0.25 µm Ti/Pd/Au Gates


    Original     		PDF AFM06P2-212, AFM06P2-213 6/99A AFM06P2-213 pt 23131 80846

    80846

    Abstract: pt 8819 MESFET S parameter ka band gaas MESfet ka band gaas mesfet Package ma 8920 pt 2358 AFM06P3-212 AFM06P3-213
    Text: Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features 213 • 22 dBm Output Power @ 18 GHz Drain Source ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% Source Gate Drain ■ Broadband Operation, DC–18 GHz Source ■ 0.25 µm Ti/Pd/Au Gates


    Original     		PDF AFM06P3-212, AFM06P3-213 6/99A 80846 pt 8819 MESFET S parameter ka band gaas MESfet ka band gaas mesfet Package ma 8920 pt 2358 AFM06P3-212 AFM06P3-213

    ka band lna

    Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
    Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for


    Original     		PDF

    TGA2519-SG

    Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
    Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m


    Original     		PDF AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519

    x-band microwave fet

    Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
    Text: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP SIZE AND COST By Dr. Edward L. Griffin and D. Gary Lerude Aerospace & Defense ICs M/A-COM, a Tyco Electronics Company Introduction After some 20+ years of DoD technology development, the commercial wireless market has


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: S510065-55Z S510065-55Z CATV Out-OfBand Tuner CATV OUT-OF-BAND TUNER Package: QFN 28 Product Description Features 28 GaAs HBT GaAs MESFET GND InGaP HBT NC SiGe BiCMOS NC Si BiCMOS  SiGe HBT GND GaAs pHEMT GND Si CMOS Vdd Si BJT GND GaN HEMT 27 26 25 24


    Original     		PDF S510065-55Z S510065 DS140120 S51006555ZSB S51006555ZSQ 25pcs S51006555ZSR

    S5100

    Abstract: X6959M HZ0603 hz0603b102 epcos EC 90 11 O 97ag
    Text: S510065-55Z S510065-55Z CATV Out-OfBand Tuner CATV OUT-OF-BAND TUNER Package: QFN 28 Product Description Features 28 GaAs HBT GaAs MESFET GND InGaP HBT NC SiGe BiCMOS NC Si BiCMOS SiGe HBT GND GaAs pHEMT GND Si CMOS Vdd Si BJT GND GaN HEMT 27 26 25 24 23 GND VID


    Original     		PDF S510065-55Z S510065 DS091123 S51006555ZSB S51006555ZSQ 25pcs S51006555ZSR S5100 X6959M HZ0603 hz0603b102 epcos EC 90 11 O 97ag

    x-band power transistor

    Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
    Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM, a Tyco Electronics Company Introduction After more than 20 years of DoD technology development, the exploding


    Original     		PDF

    CGY2108GS

    Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
    Text: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services


    Original     		PDF 500MHz 160GHz CGY2108GS D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2

    HMC902

    Abstract: beamforming antenna 4g HMC924 HMC613 HMC732LC4B HMC788LP2E E-band mmic HMC851LC3C HMC913 DP-QPSK
    Text: OFF-THE-SHELF Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Visit Us at European Microwave Week 2010! Booth #57 See Page 11 39 New Featured Products! 10 New High Speed Fiber Optic Module & SMT Products! September 2010 New High Power Signal Generator, 10 MHz to 40 GHz!


    Original     		PDF HMC-T2240 HMC902 beamforming antenna 4g HMC924 HMC613 HMC732LC4B HMC788LP2E E-band mmic HMC851LC3C HMC913 DP-QPSK

    Motorola Microwave power Transistor

    Abstract: philips LED AlGaAs LM 4088 InP HBT transistor waveguide amplifier mesfet lnb OC-24 OC-768 gallium phosphide band structure GSM band selective repeater ka band gaas MESfet
    Text: 2000 ANNUAL REPORT innovation T H R fpo O U G H N fpo E W T E C fpo H N O L O G fpo Y COMPANY PROFILE ANADIGICS, Inc. is a leading supplier of radio frequency integrated circuit RFIC solutions for the rapidly growing communications industry. The Company’s products are used to transmit,


    Original     		PDF

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


    Original     		PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    Untitled

    Abstract: No abstract text available
    Text: ESAlpha Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features 213 • 22 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -18 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface


    OCR Scan     		PDF AFM06P3-212, AFM06P3-213 6/99A

    AFM06P2-212

    Abstract: AFM06P2-213 S-12 ka band 80846
    Text: ESAlpha Ka Band Power GaAs MESFET Chips AFM06P2-212, AFM06P2-213 Features 213 • 22 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, D C -18 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface


    OCR Scan     		PDF DC-18 AFM06P2-212, AFM0781] 6/99A AFM06P2-213 AFM06P2-212 AFM06P2-213 S-12 ka band 80846

    4511 gm

    Abstract: gm 4511 AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
    Text: ^ Alpha Ka-Band Power GaAs MESFET AFM08P2-00 Chip Layout Features • 24 dBm Output Power at 18 G H z ■ High Associated Gain, 8.5 dB at 18 G H z ■ High Power Added Efficiency, 20% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 |un Ti/Pt/Au Gates ■


    OCR Scan     		PDF AFM08P2-00 DC-40 AFM08P2-00 AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 4511 gm gm 4511 AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10

    ka band gaas fet Package

    Abstract: ka band power fet gaas fet micro-X Package GHZ micro-X Package power amplifier 4 ghz power amplifier power amplifier 5 ghz
    Text: GaAs FETs and PHEMTs 3 9 Q. & Specifications Applications Package Part Number 21 dB Pi dB @ 18 GHz Medium Power Amplifier Chip Via AFM04P2-000 Low Noise/Medium Power MESFET 20 dB Pi dB @ 18 GHz Medium Power Amplifier Chip (Non-Via) AFM04P3-000 Low Noise/Medium


    OCR Scan     		PDF AFM04P2-000 AFM04P3-000 AFM04P3-212 AFM04P3-213 AFM06P2-000 AFM06P2-212 AFM06P2-213 AFM06P3-212 AFM06P3-213 AFM08P2-000 ka band gaas fet Package ka band power fet gaas fet micro-X Package GHZ micro-X Package power amplifier 4 ghz power amplifier power amplifier 5 ghz

    sem 2106

    Abstract: 4957 GM
    Text: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE76118 NOISE FIGURE & AS SO CIATED GAIN v s . FREQUENCY LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) m LOW NOISE FIGURE: < CD 0.8 dB typical at 2 GHz c cd HIGH ASSOCIATED GAIN: CD


    OCR Scan     		PDF OT-343) NE76118 NE76118 NE76118-TI sem 2106 4957 GM

    Untitled

    Abstract: No abstract text available
    Text: RF3133 I MICRO ‘DEVICES QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE • 3 V Quad-Band GSM Handsets GSM850, EGSM900, DCS/PCS Products • Commercial and Consumer Systems GPRS Class 12 Compatible POWER AMPLIFIERS Typical Applications • Portable Battery-Powered Equipment


    OCR Scan     		PDF RF3133 GSM850/GSM/DCS/PCS GSM850, EGSM900, -36dBm, RF3133

    ca301 epson

    Abstract: KA 7625 F9901 IRF9901
    Text: i# Ä R F H MICRO-DEVICES RF9901 FSK TRANSMITTER T yp ic al A p p licatio n s • Handheld POS Terminals • Digital Communication Systems • General Purpose 868 and 915 MHz • Commercial and Consumer Products ISM Band Applications P ro du ct D escription


    OCR Scan     		PDF RF9901 RF9901 16-lead RF9902 ca301 epson KA 7625 F9901 IRF9901

    RF2604PCBA

    Abstract: RF2604 QSOP-24
    Text: R F E RF2604 Ü M ICRO-DEVICES L IN E A R IF A M P L IF IE R W IT H AG C A N D RSSI T y p ic a l A p p lic a tio n s • Broadband PCS Receivers • CATV Set-top and Head-end Systems • High Data Rate Digital Systems • Portable Battery Powered Equipment


    OCR Scan     		PDF RF2604 RF2604 RF2604PCBA QSOP-24

    Untitled

    Abstract: No abstract text available
    Text: R RF2516 Preliminary F MICRO-DEVICES VHF/UHF TRANSMITTER Typ ical A p plications • 315/433MHz Band Systems • Remote Keyless Entry • Local Oscillator Source • Wireless Security Systems • Part 15.231 Applications • AM/ASK/OOK Transmitter Product D escription


    OCR Scan     		PDF RF2516 315/433MHz RF2516 16-pin SSOP-16

    K40c

    Abstract: 986M
    Text: R F E j RF2401 [ Ü MICRO DEVICES LOW NOISE AM PLIFIER/M IXER T y p ic a l A p p lic a tio n s • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • General Purpose Frequency Conversion


    OCR Scan     		PDF RF2401 RF2401 --40C K40c 986M