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    K8A50D Search Results

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    K8A50D Price and Stock

    Toshiba America Electronic Components TK8A50D(STA4QM)

    Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK8A50D(STA4,Q,M))
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    Avnet Americas TK8A50D(STA4QM) Tube 32 Weeks 50
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    • 100 $0.72116
    • 1000 $0.63404
    • 10000 $0.61952
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    Toshiba America Electronic Components TK8A50DA(STA4

    Trans MOSFET N-CH 500V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK8A50DA(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK8A50DA(STA4 Tube 32 Weeks 50
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    • 100 $0.68838
    • 1000 $0.60522
    • 10000 $0.59136
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    Toshiba America Electronic Components TK8A50D(STA4,Q,M)

    MOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm
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    Mouser Electronics TK8A50D(STA4,Q,M) 1,204
    • 1 $1.61
    • 10 $1.27
    • 100 $0.962
    • 1000 $0.664
    • 10000 $0.605
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    TME TK8A50D(STA4,Q,M) 509 1
    • 1 $1.32
    • 10 $1.05
    • 100 $0.95
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    Chip1Stop TK8A50D(STA4,Q,M) Tube 5
    • 1 -
    • 10 $1.54
    • 100 $1.54
    • 1000 $1.54
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    EBV Elektronik TK8A50D(STA4,Q,M) 1,000 19 Weeks 50
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    New Advantage Corporation TK8A50D(STA4,Q,M) 800 1
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    • 1000 $0.8463
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    Toshiba America Electronic Components TK8A50DA(STA4,Q,M)

    MOSFETs N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TK8A50DA(STA4,Q,M) 232
    • 1 $1.72
    • 10 $1.28
    • 100 $0.927
    • 1000 $0.613
    • 10000 $0.577
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    Toshiba America Electronic Components TK8A50D.S5Q(J

    MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop TK8A50D.S5Q(J 318
    • 1 -
    • 10 $0.79
    • 100 $0.502
    • 1000 $0.476
    • 10000 $0.476
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    K8A50D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor K8A50D

    Abstract: k8a50d
    Text: K8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.)


    Original     		PDF TK8A50D transistor K8A50D k8a50d

    K8A50D

    Abstract: TK8A50D K8A50 VDD400 K*A50D TK8A50
    Text: K8A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K8A50D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.7 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 4.0 S (標準)


    Original     		PDF TK8A50D SC-67 2-10U1B 20070701-JA K8A50D TK8A50D K8A50 VDD400 K*A50D TK8A50

    Untitled

    Abstract: No abstract text available
    Text: K8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK8A50D

    K8A50D

    Abstract: No abstract text available
    Text: K8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K8A50DA Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 3.2 ± 0.2 (typ.) Low drain-source ON-resistance: RDS (ON) = 0.76 High forward transfer admittance: ⎪Yfs⎪ = 4.1 S (typ.)


    Original     		PDF TK8A50DA K8A50D

    k8a50d

    Abstract: k8a50
    Text: K8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A50DA Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.76 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.1 S (typ.)


    Original     		PDF TK8A50DA k8a50d k8a50

    K8A50D

    Abstract: K8A50DA TK8A50DA K8A50
    Text: K8A50DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K8A50DA スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.76 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2


    Original     		PDF TK8A50DA K8A50D K8A50DA TK8A50DA K8A50

    transistor K8A50D

    Abstract: K8A50D TK8A50D K8A50 K*A50D tk8a50
    Text: K8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.)


    Original     		PDF TK8A50D transistor K8A50D K8A50D TK8A50D K8A50 K*A50D tk8a50

    K8A50D

    Abstract: K8A50 TK8A50D TK8A50 K8A50DA TK8A50DA
    Text: K8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A50DA Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 0.76 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.1 S (typ.)


    Original     		PDF TK8A50DA K8A50D K8A50 TK8A50D TK8A50 K8A50DA TK8A50DA

    transistor K8A50D

    Abstract: K8A50D tk8a50d K8A50 TK8A50 TK8A50D equivalent C20500
    Text: K8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K8A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.)


    Original     		PDF TK8A50D transistor K8A50D K8A50D tk8a50d K8A50 TK8A50 TK8A50D equivalent C20500

    K8A50D

    Abstract: K8A50 TK8A50D K*A50D TK8A50 K8A5 2-10U1B TK8A50D equivalent
    Text: K8A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K8A50D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.7 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 4.0 S (標準)


    Original     		PDF TK8A50D SC-67 2-10U1B K8A50D K8A50 TK8A50D K*A50D TK8A50 K8A5 2-10U1B TK8A50D equivalent