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    K7A403209B Search Results

    K7A403209B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K7A403209B Samsung Electronics 128Kx36/x32 & 256K x 18 Synchronous SRAM Original PDF
    K7A403209B Samsung Electronics 128Kx36 & 128Kx32 & 256K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet Original PDF
    K7A403209B-QC Samsung Electronics 128Kx36/x32 & 256K x 18 Synchronous SRAM Original PDF

    K7A403209B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K7A401800B-QC

    Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
    Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403609B K7A403209B K7A401809B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 570mA 490mA K7A401800B-QC K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC

    K7A403209B

    Abstract: K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC K7A401800B-QC K7A401809B K7A401809B-QC K7A403200B-QC
    Text: K7A403609B K7A403209B K7A401809B Preliminary 128Kx36 & 128Kx32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary


    Original     		PDF K7A403609B K7A403209B K7A401809B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 570mA K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC K7A401800B-QC K7A401809B K7A401809B-QC K7A403200B-QC

    Untitled

    Abstract: No abstract text available
    Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403609B K7A403209B K7A401809B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 570mA 490mA

    K7A401809B

    Abstract: K7A403209B K7A403609B 3209B
    Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM 4Mb Sync. Pipelined Burst SRAM Specification 100 TQFP with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K7A403609B K7A403209B K7A401809B 128Kx36/x32 256Kx18 K7A401809B K7A403209B K7A403609B 3209B

    K7A401800B

    Abstract: K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC
    Text: K7A403600B K7A403200B K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403600B K7A403200B K7A401800B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 350mA 290mA K7A401800B K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC

    Untitled

    Abstract: No abstract text available
    Text: K7B403625B K7B403225B K7B401825B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7B403625B K7B403225B K7B401825B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 300mA 250mA

    K7B403625B-QC

    Abstract: K7A401800B-QC K7A401809B-QC K7A403200B-QC K7A403209B-QC K7A403600B-QC K7A403609B-QC K7B401825B K7B401825B-QC K7B403625B
    Text: K7B403625B K7B401825B 128Kx36 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 256Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 300mA to 250mA at -65,


    Original     		PDF K7B403625B K7B401825B 128Kx36 256Kx18 256Kx18-Bit 300mA 250mA 280mA 230mA K7B403625B-QC K7A401800B-QC K7A401809B-QC K7A403200B-QC K7A403209B-QC K7A403600B-QC K7A403609B-QC K7B401825B K7B401825B-QC K7B403625B

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    transistor GW 93 H

    Abstract: K7B401825B K7B403625B
    Text: K7B403625B K7B401825B 128Kx36 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 256Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 300mA to 250mA at -65,


    Original     		PDF K7B403625B K7B401825B 128Kx36 256Kx18 256Kx18-Bit 300mA 250mA 280mA 230mA transistor GW 93 H K7B401825B K7B403625B

    Untitled

    Abstract: No abstract text available
    Text: K7A403600B K7A403200B K7A401800B Preliminary 128Kx36 & 128Kx32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary


    Original     		PDF K7A403600B K7A403200B K7A401800B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 350mA

    K7A401800B-QC

    Abstract: K7A401809B-QC K7A403200B-QC K7A403201B K7A403201B-QC K7A403209B-QC K7A403601B K7B401825B-QC K7B403225B-QC
    Text: K7A403601B K7A403201B Preliminary 128Kx36 & 128Kx32 Synchronous SRAM Document Title 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403601B K7A403201B 128Kx36 128Kx32 128Kx32-Bit 350mA 290mA 330mA 270mA K7A401800B-QC K7A401809B-QC K7A403200B-QC K7A403201B K7A403201B-QC K7A403209B-QC K7A403601B K7B401825B-QC K7B403225B-QC

    K7A401800B-QC

    Abstract: K7A401809B-QC K7A403200B-QC K7A403201B K7A403201B-QC K7A403209B-QC K7A403601B K7B401825B-QC K7B403225B-QC
    Text: K7A403601B K7A403201B 128Kx36/x32 Synchronous SRAM Document Title 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,


    Original     		PDF K7A403601B K7A403201B 128Kx36/x32 128Kx36 128Kx32-Bit 350mA 290mA 330mA 270mA 300mA K7A401800B-QC K7A401809B-QC K7A403200B-QC K7A403201B K7A403201B-QC K7A403209B-QC K7A403601B K7B401825B-QC K7B403225B-QC

    K7A401800B-QC

    Abstract: K7A401809B-QC K7A403200B-QC K7A403209B-QC K7B401825B K7B401825B-QC K7B403225B K7B403225B-QC K7B403625B
    Text: K7B403625B K7B403225B K7B401825B Preliminary 128Kx36 & 128Kx32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7B403625B K7B403225B K7B401825B 128Kx36 128Kx32 256Kx18 256Kx18-Bit 300mA K7A401800B-QC K7A401809B-QC K7A403200B-QC K7A403209B-QC K7B401825B K7B401825B-QC K7B403225B K7B403225B-QC K7B403625B