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    K75T60 IGBT Search Results

    K75T60 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    K75T60 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K75T60

    Abstract: 400w power supply K75T60 igbt ikw75n60
    Text: IKW75N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW75N60T PG-TO-247-3-1 K75T60 400w power supply K75T60 igbt ikw75n60

    k75t60

    Abstract: K75T60 datasheet IKW75N60T k75t6 Q67040S4719
    Text: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs


    Original     		PDF IKW75N60T Dec-04 k75t60 K75T60 datasheet IKW75N60T k75t6 Q67040S4719

    Untitled

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IKW75N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •            Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C


    Original     		PDF IKW75N60T

    Untitled

    Abstract: No abstract text available
    Text: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •            Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW75N60T

    K75T60

    Abstract: K75T60 datasheet IKW75N60T 000823 ikw75n60 K75T60 igbt PG-TO-247-3 600v 75a
    Text: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW75N60T PG-TO-247-3 K75T60 K75T60 datasheet IKW75N60T 000823 ikw75n60 K75T60 igbt PG-TO-247-3 600v 75a

    K75T60

    Abstract: IKW75N60T PG-TO-247-3-21 600V75A
    Text: IKW75N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW75N60T PG-TO-247-3-21 K75T60 IKW75N60T PG-TO-247-3-21 600V75A

    k75t60

    Abstract: K75T60 igbt K75T60 datasheet IKW75N60T ikw75n60 PG-TO-247-3-21 diode 10a 400v k75t6
    Text: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW75N60T PG-TO-247-3-21 k75t60 K75T60 igbt K75T60 datasheet IKW75N60T ikw75n60 PG-TO-247-3-21 diode 10a 400v k75t6

    Untitled

    Abstract: No abstract text available
    Text: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW75N60T PG-TO-247-3

    Untitled

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IKW75N60T q Low Loss DuoPack : IGBT in TRENCHSTOP® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW75N60T

    K75T60

    Abstract: No abstract text available
    Text: IKW75N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW75N60T K75T60