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    K71 PACKAGE Search Results

    K71 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    K71 PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K71 Package Cypress Semiconductor Cerpacks Original PDF

    K71 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor k70

    Abstract: MIL-STD-1835 K73 Package K70 Package K63 Package diode k70 K69 Package K74 PACKAGE DIAGRAM CERPACK equivalent
    Text: Package Diagram Cerpacks 24-Lead Square Cerpack K63 16-Lead Rectangular Cerpack K69 MIL-STD-1835 F- 5 Config. A 1 Package Diagram 18-Lead Rectangular Cerpack K70 MIL-STD-1835 F- 10 Config. A 20-Lead Rectangular Cerpack K71 MIL-STD-1835 F- 9 Config. A 2 Package Diagram


    Original     		PDF 24-Lead 16-Lead MIL-STD-1835 18-Lead 20-Lead 28-Lead transistor k70 K73 Package K70 Package K63 Package diode k70 K69 Package K74 PACKAGE DIAGRAM CERPACK equivalent

    MIL-STD-1835

    Abstract: transistor k70 K70 Package 11F11 80059 80061 diode k70 CERPACK K73 11F-11 K804
    Text: Package Diagram Cerpacks 24-Lead Square Cerpack K63 51-80056 16-Lead Rectangular Cerpack K69 MIL-STD-1835 F- 5 Config. A 51-80057 1 Package Diagram 18-Lead Rectangular Cerpack K70 MIL-STD-1835 F- 10 Config. A 51-80058 20-Lead Rectangular Cerpack K71 MIL-STD-1835 F- 9 Config. A


    Original     		PDF 24-Lead 16-Lead MIL-STD-1835 18-Lead 20-Lead 28-Lead transistor k70 K70 Package 11F11 80059 80061 diode k70 CERPACK K73 11F-11 K804

    D164K

    Abstract: L69 MARKING CODE 5962-9206203MYX CY7C245-35DMB smd CY 203 CY7C424-40DMB 14LX smd cross reference SMD MARKING CODE UV 5962-85525
    Text: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative for the latest SMD update. DESC SMD Standardized Military Drawing Approvals[1] Package[3] SMD Number 84036 84036


    Original     		PDF STD883, PRF1835 Pre1985 D164K L69 MARKING CODE 5962-9206203MYX CY7C245-35DMB smd CY 203 CY7C424-40DMB 14LX smd cross reference SMD MARKING CODE UV 5962-85525

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAS70BRW /BAS70DW-04 / SOT-363 BAS70DW-05 /BAS70DW-06 /BAS70TW SCHOTTKY BARRIER DIODE ARRAYS FEATURES  Low Forward Voltage Drop  Fast Switching  Small Surface Mount Package


    Original     		PDF OT-363 BAS70BRW /BAS70DW-04 OT-363 BAS70DW-05 /BAS70DW-06 /BAS70TW BAS70BRW BAS70DW-04 BAS70DW-05

    K73 Package

    Abstract: DIODE marking A2 c3 marking marking c3 SOT-363 marking 05 BAS70BRW BAS70DW-04 BAS70DW-05 BAS70DW-06 BAS70TW
    Text: BAS70TW /DW-04 / DW-05 /DW-06 /BRW NEW PRODUCT SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Features • · · · Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection SOT-363 A B C


    Original     		PDF BAS70TW /DW-04 DW-05 /DW-06 OT-363 OT-363, MIL-STD-202, DS30158 K73 Package DIODE marking A2 c3 marking marking c3 SOT-363 marking 05 BAS70BRW BAS70DW-04 BAS70DW-05 BAS70DW-06

    Untitled

    Abstract: No abstract text available
    Text: BAS70TW /DW-04 / DW-05 /DW-06 /BRW NEW PRODUCT SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Features • · · · Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection SOT-363 A KXX


    Original     		PDF BAS70TW /DW-04 DW-05 /DW-06 OT-363 OT-363, MIL-STD-202, DS30158

    marking CODE nw

    Abstract: marking code 04 sot-363 sot363 marking 02
    Text: BAS70TW /DW-04 / DW-05 /DW-06 /BRW NEW PRODUCT SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Features • · · · Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection SOT-363 A · ·


    Original     		PDF BAS70TW /DW-04 DW-05 /DW-06 OT-363, J-STD-020A MIL-STD-202, OT-363 BAS70TW-7 com/datasheets/ap02007 marking CODE nw marking code 04 sot-363 sot363 marking 02

    k72 transistor

    Abstract: transistor k72 2N5143 MPS-K72 k72 npn TRANSISTOR C 2026 MPS-K71 544S K70 Package TP6224
    Text: CDDilPIIC EconolineR Plastic-Molded D r K H j U C Silicon SEPT Transistors ★ - T A B L E 1 TRANSISTOR KITS MPS-K20, M PS-K21 and M P S-K 22 are three, five and nine transistor kits consisting of M P S-A 20's with various hFE selections. M PS-K70, M PS-K71 and M PS-K72 are three, five and nine transistor kits consisting of M P S-A 70’s with various hFE selections.


    OCR Scan     		PDF MPS-K20, MPS-K21 MPS-K22 MPS-A20 MPS-K70, MPS-K71 MPS-K72 MPS-A70 MPS-K20/MPS-K70 10VDC k72 transistor transistor k72 2N5143 k72 npn TRANSISTOR C 2026 544S K70 Package TP6224

    C2021 m

    Abstract: C2021 palc16r8 PALC16R 16R4 programming specification ic w6 sem 2015 ic equivalent PALC20 PALC16R6-30WMB
    Text: K :Æ^ = PAL C20 Series r fÆ CYPRESS :.-. = Sr SEMICONDUCTOR Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 Features • CMOS EPROM technology for repro­ grammability • Higb performance at quarter power


    OCR Scan     		PDF 20-pin PALC16R8-30KMB PALC16R8-30LMB PALC16R8-30QMB PALC16R8-- 30WMB PALC16R8L-35LC PALC16R8L-35PC PALC16R8L-35VC PALC16R8L-35WC C2021 m C2021 palc16r8 PALC16R 16R4 programming specification ic w6 sem 2015 ic equivalent PALC20 PALC16R6-30WMB

    16L88

    Abstract: PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB
    Text: 256=^2 ooQb^o s d c y p MbE D CYPRESS SEMICONDUCTOR PAL C20 Series ~ SEMICONDUCTOR Features • CMOS EPROM technology for « p ro ­ grammability • High performance at quarter power • — tpo = 25 ns — ts = 20 ns — tco = 15 ns — Ice = 45 mA • High performance at military


    OCR Scan     		PDF PALC16R8L-35VC PALC16R8L-35WC PALC16R8â PALC16R8-35PC/PI PALC16R8-35VC/VC PALC16R8-35WCAVC PALC16R8-40DMB PALC16R8-40KMB PALC16R8-40LMB PALC16R8-40QMB 16L88 PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB

    Untitled

    Abstract: No abstract text available
    Text: es Br Sm QYPRESS 'W SEMICONDUCTOR PAL C20 Series = Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 — tpi> = 20 ns • High reliability — Proven EPROM technology — > 1500V input protection from elec­ trostatic discharge — 100% AC and DC tested — 10% power supply tolerances


    OCR Scan     		PDF LC16R PALC20

    Untitled

    Abstract: No abstract text available
    Text: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)


    OCR Scan     		PDF CY7C168A CY7C169A 7C168A) 7C168) 7C168

    SJ27

    Abstract: PALC16R 143X1
    Text: PAL C20 Series CYPRESS = SEMICONDUCTOR • C M O S E PR O M technology Tor rep ro g ram m ability • H igh p erform ance a t q u a rte r pow er — t p D = 25 ns — ts = 20 ns • H igh reliability — Proven E P R O M technology — > 1500V in p u t protection from elec­


    OCR Scan     		PDF 20-pin 8-35L LC16R 8--35PC/P1 8-40D 8-40K 8-40L PALC20 SJ27 PALC16R 143X1

    Untitled

    Abstract: No abstract text available
    Text: CY7C168 CY7C169 r CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7C168 CMOS for optimum speed/power High speed — t*A = 25 ns — *a c e = 15 ns (7C169) Low active power — 385 mW Low standby power (7C168) — 83 mW


    OCR Scan     		PDF CY7C168 CY7C169 7C168) 7C169) CY7C168A CY7C169A 7C16H

    7C168A

    Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
    Text: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)


    OCR Scan     		PDF CY7C168A CY7C169A 7C168A) 7C169A) 7C168) 2001Velectrostatic CY7C168A CY7C169A CY7CI68Ahas CY7C169A-45FMB 7C168A 7C168 CY7C168A-25LMB

    Untitled

    Abstract: No abstract text available
    Text: PAL C 20 Series CYPRESS — SEMICONDUCTOR Reprogrammable CMOS PAL® C 16L8, 16R8, 16R6, 16R4 Features • C M O S E P R O M technology for reprogrammability • H igh performance at quarter power — tpD “ 25 ns — ts = 20 ns — t c o = 15 ns — I c e = 45 mA


    OCR Scan     		PDF R8-30KMB 16R8L-25LC 16R8-20QMB 16R8-20KMB 16R8-40DMB 16R8-40LMB 16R8-40WMB 16R8-40KMB 16R8-40QMB 38-00001-C

    Untitled

    Abstract: No abstract text available
    Text: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese­ lected 7C168A • CMOS for optimum speed/power • High speed — t « = IS ns • Low active power — 385 mW • Low standby power (7C168) - 8 3 mW — tACE = 10 ns (7CI69A)


    OCR Scan     		PDF CY7C168A CY7C169A 7C168A) 7CI69A) 7C168) pedancCY7C168A CY7C169A 7C168 38-00095-D

    CY7C

    Abstract: No abstract text available
    Text: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features A u to m atic pow er-dow n w hen dese­ lected 7C168A C M O S fo r o p tim u m speed/pow er H igh speed — 15 n s t*A — 10 n s U c e (7C169A) low active pow er — 385 m W Low stan d b y pow er (7C168)


    OCR Scan     		PDF CY7C168A CY7C169A 7C168A) 7C169A) 7C168) 7C168 38-00095-D CY7C

    v 2164

    Abstract: CY7C167A-35VC
    Text: CY7C167A SEMICONDUCTOR 16,384 x 1 Static RAM Features Functional Description • Automatic power-down when dese­ lected • CMOS for optim um speed/power • High speed — 15 ns T he CY7C167A is a high-performance CMOS static RAM organized as 16,384 words by 1 bit. Easy memory expansion is


    OCR Scan     		PDF CY7C167A CY7C145DC Y7C167A-45LC CY7C167A-45VC CY7C167A-45DMB CY7C167A-45LMB CY7C167A-45KMB CY7C167A 38-00093-B v 2164 CY7C167A-35VC

    CY7C167A

    Abstract: cy7c167a-35pc VA SO
    Text: CYPRESS SEMICONDUCTOR 4b ED a S S f l T b h SO G Q t S O DSaCYP "T ^ b-Z V 05 CYPRESS SEMICONDUCTOR Features Automatic power-down when dese­ lected CMOS for optimum speed/power Highspeed — IS ns Low active power —275 mW Low standby power — 83 mW TTL-compatiblc inputs and outputs


    OCR Scan     		PDF -T-Hlcrllr05 CY7C167A 384x1 CY7C167A CY7C167Ahas CY7C167A-25VC CY7C167A-45KMB CY7C167A-25DMB CY7C167A-25LMB CY7C167A-25KMB cy7c167a-35pc VA SO

    16L8-25

    Abstract: 16r4-25pc 16L8L-25WC 16R6-20DMB 16R4-40QMB 16R4-4 16L8-30LMB
    Text: _ PAL C 20 Series SEMICONDUCTOR Reprogrammable CMOS PAL® C 16L8, 16R8, 16R6, 16R4 Features C M O S E P R O M technology for reprogrammability • H igh reliability' — Proven E P R O M technology — > 1500V input protectio n from electrostatic discharge


    OCR Scan     		PDF 20-pin 16R8L-35PC I6R8L-35VC 16R8L-35LC 16R8L-35WC 16R8-35PC/PI 16R8-35VC/VI 16R8-35LC 16R8-35WC/W 16R8-40DMB 16L8-25 16r4-25pc 16L8L-25WC 16R6-20DMB 16R4-40QMB 16R4-4 16L8-30LMB

    Untitled

    Abstract: No abstract text available
    Text: _ PAL C 20 Series SEMICONDUCTOR Reprogrammable CMOS PAL® C 16L8, 16R8, 16R6, 16R4 Features C M O S E P R O M technology for reprogramm ability • H igh perform ance at quarter power — tPD = 25 ns — t s = 20 ns — t c o = 15 ns


    OCR Scan     		PDF 8-35PC 16R8-35VC/VI 16R8-30KMB 16R8-25V 16R8-40DMB 16R8-40LMB 16R8-40WMB 16R8-40KMB 16R8-40QMB 38-OOOOl-C

    7C167A

    Abstract: No abstract text available
    Text: _CY7C167A SEMICONDUCTOR 16,384 x 1 Static RAM Features Functional Description • Automatic power-down when dese­ lected T h e CY 7C167A is a high-perform ance C M O S static R A M organized as 16,384 words by 1 bit. Easy m em ory expansion is


    OCR Scan     		PDF CY7C167A insur45LM CY7C167A-45KM CY7C167A 38-00093-B 7C167A

    329u

    Abstract: No abstract text available
    Text: CY7C167A CYPRESS SEMICONDUCTOR 16,384 x 1 Static RAM Functional Description Features Automatic power-down when dese­ lected CMOS for optimum speed/power High speed — 15 ns Low active power — 275 mW Low standby power — 83 mW TTL-compatible inputs and outputs


    OCR Scan     		PDF CY7C167A 329u