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    K6F3216 Price and Stock

    ARCOTEK K6F3216U6M-EF70T

    SRAM ASYNC SLOW 32MB 2Mx16 3V 55
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    DigiKey K6F3216U6M-EF70T Reel 100
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    • 100 $7.5
    • 1000 $7.5
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    K6F3216U6M-EF70T Reel
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    Samsung Semiconductor K6F3216U6M-EF55

    STANDARD SRAM, 2MX16, 55NS, CMOS, PBGA55
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components K6F3216U6M-EF55 6,400
    • 1 $5.25
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    • 100 $5.25
    • 1000 $1.925
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    Samsung Electronics Co. Ltd K6F3216U6MEF55

    2M X 16 BIT SUPER LOW POWER AND LOW VOLTAGE FULL CMOS STATIC RAM Standard SRAM, 2MX16, 55ns, CMOS, PBGA55
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    ComSIT USA K6F3216U6MEF55 175
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    K6F3216 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6F3216T6M Samsung Electronics 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F3216T6M-EF55 Samsung Electronics 2M x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F3216T6M-F Samsung Electronics 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F3216U6M Samsung Electronics 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF
    K6F3216U6M-F Samsung Electronics 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Original PDF

    K6F3216 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6F3216T6M-EF70

    Abstract: K6F3216T6M K6F3216T6M-F
    Text: K6F3216T6M Family CMOS SRAM Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 1.0 Draft Date Remark November 4, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original
    PDF K6F3216T6M 55/Typ. 35/Typ. K6F3216T6M-EF70 K6F3216T6M-F

    K6F3216R6M-EF70

    Abstract: K6F3216R6M
    Text: Preliminary CMOS SRAM K6F3216R6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark July 30, 2002 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original
    PDF K6F3216R6M 55/Typ. 35/Typ. K6F3216R6M-EF70

    K6F3216U6M-EF55

    Abstract: K6F3216U6M K6F3216U6M-F K6F3216U6MEF
    Text: K6F3216U6M Family CMOS SRAM Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft January 31, 2002 Preliminary 0.1 Revised - Changed ICC2 from 35mA to 40mA for 55ns product


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    PDF K6F3216U6M 55/Typ. 35/Typ. K6F3216U6M-EF55 K6F3216U6M-F K6F3216U6MEF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    K6X8016T3B-UF55

    Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
    Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm


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    PDF AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70