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    K4S641632K Price and Stock

    Samsung Semiconductor K4S641632K-UC75

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    Bristol Electronics K4S641632K-UC75 183
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    Quest Components K4S641632K-UC75 140
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    K4S641632K-UC75 60
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    Samsung Semiconductor K4S641632K-UC60

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    Quest Components K4S641632K-UC60 76
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    K4S641632K-UC60 5
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    Chip 1 Exchange K4S641632K-UC60 2,021
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    Samsung Semiconductor K4S641632KUI75

    1M X 16BIT X 4 BANKS SDRAM Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54
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    ComSIT USA K4S641632KUI75 2,435
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    Samsung Semiconductor K4S641632KUC75

    64MBIT K-DIE SDRAM Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54
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    ComSIT USA K4S641632KUC75 894
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    Samsung Electronics Co. Ltd K4S641632K-UC75T

    SD 4Mx16 PC133
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    Win Source Electronics K4S641632K-UC75T 4,100
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    K4S641632K Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S641632K Samsung Electronics 64Mb K-die SDRAM Original PDF
    K4S641632K-UC50 Samsung Electronics 64Mb K-die SDRAM Original PDF
    K4S641632K-UC60000 Samsung Electronics 64Mb K-die SDRAM Original PDF
    K4S641632K-UC75 Samsung Electronics 64Mb K-die SDRAM Original PDF
    K4S641632K-UC75000 Samsung Electronics 64Mb K-die SDRAM Original PDF
    K4S641632K-UI60 Samsung Electronics 64Mb K-die SDRAM Original PDF
    K4S641632K-UL75 Samsung Electronics 64Mb K-die SDRAM Original PDF
    K4S641632K-UP75 Samsung Electronics 64Mb K-die SDRAM Original PDF

    K4S641632K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S641632K

    Abstract: K4S640832K K4S641632
    Text: K4S640832K K4S641632K Synchronous DRAM 64Mb K-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K4S640832K K4S641632K A10/AP K4S641632K K4S640832K K4S641632

    K4S641632K-T

    Abstract: Synchronous DRAM and Samsung
    Text: K4S641632K Industrial Synchronous DRAM 64Mb K-die SDRAM Specification Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S641632K A10/AP K4S641632K-T Synchronous DRAM and Samsung

    K4S641632k uc60

    Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
    Text: General Information SDRAM SDRAM Product Guide November 2007 Memory Division November 2007 General Information SDRAM A. SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 S X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM


    Original     		PDF 4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 80TYP 25TYP K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N

    K4S641632K-UC75

    Abstract: h8sx K4S641632K R1LV1616RSD-7SR samsung BCK0
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Cluster Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in cluster transfer mode.


    Original     		PDF H8SX/1668R H8SX/166products REJ06B0694-0100/Rev K4S641632K-UC75 h8sx K4S641632K R1LV1616RSD-7SR samsung BCK0

    h8sx

    Abstract: R1LV1616RSD-7SR K4S641632K-UC75
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Repeat Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in repeat transfer mode.


    Original     		PDF H8SX/1668R H8SX/1668R REJ06B0693-0100/Rev h8sx R1LV1616RSD-7SR K4S641632K-UC75

    K4S641632K-UC75

    Abstract: h8sx R1LV1616RSD-7SR K4S641632KUC75
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Normal Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in normal transfer mode.


    Original     		PDF H8SX/1668R H8SX/1668Rproducts REJ06B0691-0100/Rev K4S641632K-UC75 h8sx R1LV1616RSD-7SR K4S641632KUC75

    K4S641632K-UC75

    Abstract: samsung k4s641632k-uc75 h8sx R1LV1616RSD-7SR
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Block Transfer Introduction The EXDMAC function is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area in block transfer mode.


    Original     		PDF H8SX/1668R H8SX/1668R REJ06B0692-0100/Rev K4S641632K-UC75 samsung k4s641632k-uc75 h8sx R1LV1616RSD-7SR

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K4S641632K-UC75

    Abstract: R1LV1616RSD-7SR LV161 h8sx
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Extended Repeat Area Function Introduction The extended repeat area function of the EXDMAC in normal transfer mode is used to transfer data from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area.


    Original     		PDF H8SX/1668R REJ06B0745-0100/Rev K4S641632K-UC75 R1LV1616RSD-7SR LV161 h8sx

    K4S641632K-UC75

    Abstract: SAMSUNG K4S641632K-UC75 K4S641632K R1LV1616RSD-7SR h8sx uc75 LV1616RSD-7SR
    Text: APPLICATION NOTE H8SX Family Transfer between Synchronous DRAM and External SRAM with EXDMAC Offset Addition Introduction Data are transferred by the EXDMAC function from the synchronous DRAM area (hereafter referred to as SDRAM) to the SRAM area using normal transfer mode where the transfer address is updated by adding a specified offset.


    Original     		PDF H8SX/1668R REJ06B0695-0100/Rev K4S641632K-UC75 SAMSUNG K4S641632K-UC75 K4S641632K R1LV1616RSD-7SR h8sx uc75 LV1616RSD-7SR

    K4S641632K-UC75

    Abstract: K4S641632K _INITSCT
    Text: APPLICATION NOTE H8SX Family Synchronous DRAM Operation after Cancellation of Deep Software Standby Mode Introduction This application note describes the method for accessing synchronous DRAM SDRAM after cancellation of deep software standby mode. This method makes it possible to avoid problems related to the period of Bφ and SDRAMφ output instability


    Original     		PDF H8SX/1668R REJ06B0814-0100/Rev K4S641632K-UC75 K4S641632K _INITSCT