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    K4013 TRANSISTOR Search Results

    K4013 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    K4013 TRANSISTOR Datasheets Context Search

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    transistor k4013

    Abstract: k4013 K4013 transistor 2SK4013 MARKING toshiba 133
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


    Original     		2SK4013 transistor k4013 k4013 K4013 transistor 2SK4013 MARKING toshiba 133 PDF

    2SK4013

    Abstract: transistor k4013 K4013 transistor k4013
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


    Original     		2SK4013 2SK4013 transistor k4013 K4013 transistor k4013 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK4013 PDF

    k4013

    Abstract: 2SK4013 transistor k4013 K4013 transistor
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK4013 k4013 2SK4013 transistor k4013 K4013 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK4013 PDF

    K4013

    Abstract: 2SK4013 transistor k4013 K4013 transistor
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		2SK4013 K4013 2SK4013 transistor k4013 K4013 transistor PDF