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    K3843 CIRCUIT Search Results

    K3843 CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    K3843 CIRCUIT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Applications  Low drain−source ON resistance : RDS (ON) = 2.7 mΩ (typ.)  High forward transfer admittance


    Original     		PDF 2SK3843 125ruments,

    k3843

    Abstract: k3843 circuit 2sk3843
    Text: 2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.7 mΩ (typ.) z High forward transfer admittance : |Yfs| = 120 S (typ.)


    Original     		PDF 2SK3843 k3843 k3843 circuit 2sk3843

    Untitled

    Abstract: No abstract text available
    Text: 2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance: RDS (ON) = 2.7 mΩ (typ.) z High forward transfer admittance: |Yfs| = 120 S (typ.)


    Original     		PDF 2SK3843

    k3843

    Abstract: 2SK3843
    Text: 2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance: RDS (ON) = 2.7 mΩ (typ.) z High forward transfer admittance: |Yfs| = 120 S (typ.)


    Original     		PDF 2SK3843 k3843 2SK3843

    K3843

    Abstract: 2SK3843
    Text: 2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3843 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) z High forward transfer admittance: |Yfs| = 120 S (typ.)


    Original     		PDF 2SK3843 K3843 2SK3843