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    K3742 TRANSISTOR Search Results

    K3742 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    K3742 transistor

    Abstract: k3742 transistor K3742
    Text: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		PDF 2SK3742 K3742 transistor k3742 transistor K3742

    K3742 transistor

    Abstract: K3742 transistor K3742 2SK3742 k3742 7
    Text: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		PDF 2SK3742 K3742 transistor K3742 transistor K3742 2SK3742 k3742 7

    k3742

    Abstract: K3742 transistor 2SK3742 k3742 7
    Text: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		PDF 2SK3742 k3742 K3742 transistor 2SK3742 k3742 7

    k3742

    Abstract: K3742 transistor k3742 7 2SK3742
    Text: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		PDF 2SK3742 k3742 K3742 transistor k3742 7 2SK3742

    Untitled

    Abstract: No abstract text available
    Text: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3742

    K3742 transistor

    Abstract: No abstract text available
    Text: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		PDF 2SK3742 K3742 transistor