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    K3567 VOLTAGE Search Results

    K3567 VOLTAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    K3567 VOLTAGE Datasheets Context Search

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    transistor k3567

    Abstract: k3567 k3567 voltage k3567 transistor 2SK3567
    Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3567 transistor k3567 k3567 k3567 voltage k3567 transistor 2SK3567

    k3567

    Abstract: transistor k3567 2sk3567 2SK3567 equivalent k3567 transistor k3567 B L k3567 voltage
    Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3567 k3567 transistor k3567 2sk3567 2SK3567 equivalent k3567 transistor k3567 B L k3567 voltage

    transistor k3567

    Abstract: K3567 k3567 transistor k3567 voltage 2SK3567
    Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF 2SK3567 transistor k3567 K3567 k3567 transistor k3567 voltage 2SK3567

    transistor k3567

    Abstract: k3567 2sk3567 2SK3567 equivalent k3567 transistor 288MH k3567 B L k3567 voltage marking code TC
    Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.5 S (typ.)


    Original     		PDF 2SK3567 transistor k3567 k3567 2sk3567 2SK3567 equivalent k3567 transistor 288MH k3567 B L k3567 voltage marking code TC