K3563 APPLICATIONS Search Results

K3563 APPLICATIONS Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
C8231A		Rochester Electronics LLC	Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24
AM79865JC		Rochester Electronics LLC	Telecom Circuit,
AM79866AJC-G		Rochester Electronics LLC	SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20
MD8087/R		Rochester Electronics LLC	Math Coprocessor, CMOS
AM7992BPC		Rochester Electronics LLC	Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24

K3563 APPLICATIONS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K3563 Transistor Abstract: K3563 transistor k3563 2SK3563 k356 Text: TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage	Original	2SK3563 K3563 Transistor K3563 transistor k3563 2SK3563 k356	PDF
K3563 Transistor Abstract: K3563 2sk3563 transistor 625 Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3563 K3563 Transistor K3563 2sk3563 transistor 625	PDF
K3563 Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet k356 Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet k356	PDF
K3563 Transistor Abstract: K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3563 K3563 Transistor K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications	PDF
K3563 Abstract: K3563 Transistor 2sK3563 datasheet 2sK3563 Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3563 K3563 K3563 Transistor 2sK3563 datasheet 2sK3563	PDF
K3563 Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.5 S (typ.)	Original	2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications	PDF