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    K3561 TRANSISTOR Search Results

    K3561 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    K3561 TRANSISTOR Datasheets Context Search

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    K3561

    Abstract: transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356
    Text: TENTATIVE 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3561 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		PDF 2SK3561 K3561 transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356

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    Abstract: No abstract text available
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3561

    K3561

    Abstract: transistor k3561 2sk3561 2SK3561 equivalent 40VDS k3561 transistor k3561 Silicon N Channel MOS Type
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3561 K3561 transistor k3561 2sk3561 2SK3561 equivalent 40VDS k3561 transistor k3561 Silicon N Channel MOS Type

    K3561

    Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3561 K3561 transistor k3561 k3561 transistor k3561 transistor application 2sk3561

    K3561

    Abstract: transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.)


    Original     		PDF 2SK3561 K3561 transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet

    K3561

    Abstract: transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3561 K3561 transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561

    K3561

    Abstract: transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK3561 K3561 transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application