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    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    MP-52RJ11SNNE-100 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft Datasheet

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    K3561

    Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original
    2SK3561 K3561 transistor k3561 k3561 transistor k3561 transistor application 2sk3561 PDF

    K3561

    Abstract: transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original
    2SK3561 K3561 transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561 PDF

    K3561

    Abstract: transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application
    Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original
    2SK3561 K3561 transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application PDF