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    K30N60HS IGBT Search Results

    K30N60HS IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    K30N60HS IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K30N60HS

    Abstract: K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS SKW30N60HS
    Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW30N60HS PG-TO-247-3-1 Q67040sS4503 PG-TO-247-3-1 O-247AC) SKW30N60HS K30N60HS K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS

    k30N60hs

    Abstract: K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60-
    Text: SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW30N60HS PG-TO-247-3 K30N60HS k30N60hs K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60-

    K30N60HS

    Abstract: k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS SKW30N60HS
    Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS

    K30N60HS

    Abstract: equivalent of K30N60HS k30n60 K30N60HS IGBT SKW30N60HS
    Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS equivalent of K30N60HS k30n60 K30N60HS IGBT