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    K2I TRANSISTOR Search Results

    K2I TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K2I TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2F transistor

    Abstract: AP2202K-ADJTR AP2202K-ADJTRE1 AP2202 e2c marking AP2202ADJ
    Text: Preliminary Datasheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise 45µVrms at 80Hz-100KHz , ultra low dropout voltage (typically 165mV at 150mA), very low quiescent current (1µA maximum)


    Original     		PDF 150mA AP2202 AP2202 80Hz-100KHz) 165mV 150mA) 100Hz) K2F transistor AP2202K-ADJTR AP2202K-ADJTRE1 e2c marking AP2202ADJ

    AP2202

    Abstract: AP2202K-ADJTR AP2202K-ADJTRE1 AP2202R AP2202K-ADJ AP2202KADJ AP-220
    Text: Data Sheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise, ultra low dropout voltage typically 165mV at 150mA , very low standby current (1µA maximum) and excellent power supply ripple


    Original     		PDF 150mA AP2202 AP2202 165mV 150mA) 100Hz) 150mA AP2202K-ADJTR AP2202K-ADJTRE1 AP2202R AP2202K-ADJ AP2202KADJ AP-220

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise, ultra low dropout voltage typically 165mV at 150mA , very low standby current (1µA maximum) and excellent power supply ripple


    Original     		PDF 150mA AP2202 AP2202 165mV 150mA) 100Hz) 150mA

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise, ultra low dropout voltage typically 165mV at 150mA , very low standby current (1µA maximum) and excellent power supply ripple


    Original     		PDF 150mA AP2202 AP2202 165mV 150mA) 100Hz) 150mA

    transistor w10

    Abstract: FR02 FR03 P100 SEG23
    Text: Application Note 4559 Group Input/Output Ports 1． Abstract This document shows an example of how to set the input/output ports of the 4559 group of Renesas microcomputers and an application example for using those ports. 2． Introduction The application example explained in this document applies for use with the microcomputers and under the


    Original     		PDF REJ05B1031-0100/Rev 45ent transistor w10 FR02 FR03 P100 SEG23

    AP2202

    Abstract: AP2202K-ADJTR AP2202K-ADJTRE1 marking R22B
    Text: Data Sheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise, ultra low dropout voltage typically 165mV at 150mA , very low standby current (1µA maximum) and excellent power supply ripple


    Original     		PDF 150mA AP2202 AP2202 165mV 150mA) 100Hz) 150mA AP2202K-ADJTR AP2202K-ADJTRE1 marking R22B

    hp pin diode

    Abstract: Microwave PIN diode HPND-4165 mini circulator phase shifter circulator AN929 HPND-4005 hp 3101 pin M 4005 G is what type of transistor 30 MHz phase shifters
    Text: Applications of PIN Diodes Application Note 922 Introduction The most important property of the PIN diode is the fact that it can, under certain circumstances, behave as an almost pure resistance at RF frequencies, with a resistance value that can be varied


    Original     		PDF HPND-4005 MTT-35, hp pin diode Microwave PIN diode HPND-4165 mini circulator phase shifter circulator AN929 HPND-4005 hp 3101 pin M 4005 G is what type of transistor 30 MHz phase shifters

    phase shifter circulator

    Abstract: HPND-4005 Microwave PIN diode AN929 HPND-4165 tunnel diode
    Text: Applications of PIN Diodes Application Note 922 Introduction The most important property of the PIN diode is the fact that it can, under certain circumstances, behave as an almost pure resistance at RF frequencies, with a resistance value that can be varied


    Original     		PDF HPND-4005 MTT-35, 5954-2147E 5965-8666E phase shifter circulator HPND-4005 Microwave PIN diode AN929 HPND-4165 tunnel diode

    AN-957

    Abstract: circulator s-band datasheet HPND-4165 mini circulator nkt ceramic UHF Phase Shifter AN929 HPND-4005
    Text: Applications of PIN Diodes Application Note 922 Introduction Characteristics of the PIN Diode The most important property of the PIN diode is the fact that it can, under certain circumstances, behave as an almost pure resistance at RF frequencies, with a resistance


    Original     		PDF have5771-26 5965-8666E AN-957 circulator s-band datasheet HPND-4165 mini circulator nkt ceramic UHF Phase Shifter AN929 HPND-4005

    GMA marking

    Abstract: No abstract text available
    Text: SIEMENS BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 G H z at collector currents from 70mA to 130mA • Power amplifiers for D ECT and PCN systems • Integrated emitter ballast resistor


    OCR Scan     		PDF 130mA BFG135A Q62702-F1322 OT-223 900MHz IS211 GMA marking

    BFX60

    Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
    Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier


    OCR Scan     		PDF BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier

    K2I transistor

    Abstract: TRANSISTOR K 135
    Text: SIEMENS BF775W NPN Silicon RF Transistor • Especially suitable for TV-sat and UHF tuners LOs Q62702-F1520 1=B m BF 775W ro II ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 3=C Package


    OCR Scan     		PDF BF775W Q62702-F1520 OT-323 321/S K2I transistor TRANSISTOR K 135

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • ^ = 5.5GHz • Gold metalization for high reliability BFP 136W PAs Q62702-F1575 1 =E N> I! O ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1575 OT-343 900MHz

    pin diagram of bf 494 transistor

    Abstract: siemens products transistor
    Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1721 SCT-595 200mA pin diagram of bf 494 transistor siemens products transistor

    transistor ECG 152

    Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
    Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application


    OCR Scan     		PDF DDD714b ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 transistor ECG 152 Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041

    transistor ecg36

    Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
    Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo


    OCR Scan     		PDF DDD714b ECG36 ECG36MP* ECG37) T48-1 ECG37 ECG37MCP ECG36) ECG36 ECG37 transistor ecg36 transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180

    transistor pnp ecg 180

    Abstract: Transistor 123AP 123AP transistor BU 102A transistor fet ecg transistor. ECG 123AP 4511 gm Bt 2313 transistor t18 FET ecg 123 transistor
    Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type D escription and A p plicatio n • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at T c = 25°C Unless Otherwise Noted) C ollector To Base V olts C ollector To E m itter V olts Base to E m itter V olts


    OCR Scan     		PDF GGG71H7 ECG58 ECG59) TB-35 T44-1 ECG59 ECG58) ECG60 transistor pnp ecg 180 Transistor 123AP 123AP transistor BU 102A transistor fet ecg transistor. ECG 123AP 4511 gm Bt 2313 transistor t18 FET ecg 123 transistor

    Bt 2313

    Abstract: Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24
    Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type Description and Application • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Collector To Emitter Volts b v Ceo Base to Emitter Volts


    OCR Scan     		PDF GGG71H7 ECG58 ECG59) TB-35 T44-1 ECG59 ECG58) ECG60 Bt 2313 Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24

    tda AMP 12V

    Abstract: TDA 4716 C 4714C IC tda 2525 20/TDA 4716 C
    Text: SIEMENS IC fo r S w itc h e d -M o d e P o w e r S u p p lie s S M P S TDA 4714 C TDA 4716 C Bipolar IC Features • • • • • • • • • • Push-pull outputs (open collector) Double pulse suppression Dynamic current limitation Overvoltage protection


    OCR Scan     		PDF P-DIP-14-1 Q67000-A8312 Q67000-A8313 P-DIP-14-1 P-DIP-16 TDA4714C TDA4716C tda AMP 12V TDA 4716 C 4714C IC tda 2525 20/TDA 4716 C

    150N3

    Abstract: No abstract text available
    Text: ANALOG DEVICES Ultrahigh Frequency Operational Amplifier □ AD5539 FEATURES Improved Replacement for Signetics SE/NE5539 CON NECTION DIAGRAM Plastic D IP N Package or Cedip (Q) Package AC PERFORMANCE Gain Bandwidth Product: 1.4 GHz typ Unity Gain Bandwidth: 220 MHz typ


    OCR Scan     		PDF AD5539 SE/NE5539 AD5539S) AD5539J) MIL-STD-883B AD5539 150N3

    D784031GC

    Abstract: CR02 am transistor nec 78 D784035 D784031G 0007FH D784036A
    Text: DATA SHEET ¿iPD784031 A MOS INTEGRATED CIRCUIT 16/ 8-BIT SINGLE-CHIP MICROCONTROLLER The /xPD784031(A) is a product of the /xPD784038 sub-series in the 78K/IV series. A stricter quality assurance program applies to the / xPD784031 (A) than the /¿PD784031 (standard product).


    OCR Scan     		PDF uPD784031 /xPD784031 /xPD784038 78K/IV PD784031 PD784031 D784031GC CR02 am transistor nec 78 D784035 D784031G 0007FH D784036A

    information applikation

    Abstract: "Mikroelektronik" Heft mikroelektronik Heft CDB4151 mikroelektronik Heft 12 MH8475 MH7442 Mikroelektronik Information Applikation information applikation mikroelektronik CDB4153
    Text: ' 1 o lE h f c p o n ih Information Applikation s o c h a lH ü n o n il- c Information Applikation HEFT 25 I M P O R T - I S T E IL 1 Ivob Halbleiterwerk frankfurt/ader | b e trie b im m b kom binat m ikroelektronik ] KAMMER DER TECH N IK I Bezirksvorstand Frankfurt/O.


    OCR Scan     		PDF

    D784035

    Abstract: NEC Electronics uPD Series
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿uPD784035 A , 784036(A) 16/ 8-BIT SINGLE-CHIP MICROCONTROLLER The /xPD784036(A) is a product of the /xPD784038 sub-series in the 78K/IV series. A stricter quality assurance program applies to the /xPD784036(A) than the /¿PD784036 (standard product).


    OCR Scan     		PDF uPD784035 uPD784036 /xPD784036 /xPD784038 78K/IV PD784036 /xPD78P4038 D784035 NEC Electronics uPD Series

    38027E8SP

    Abstract: 38027E8FP N001C
    Text: MITSUBISHI MICROCOM PUTERS 3802 Group SIN G LE-C H IP 8-BIT CM OS M ICRO COM PUTER DESCRIPTION FEA TU R ES The 3802 group is the 8-bit microcomputer based on the 740 family core technology. The 3802 group is designed for controlling systems that re­ quire analog signal processing and include two serial I/O


    OCR Scan     		PDF QD2373S 002373b 38027E8SP 38027E8FP N001C