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    K2996 TRANSISTOR Search Results

    K2996 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    k2996

    Abstract: k2996 transistor K2996 equivalent equivalent k2996 transistor k2996 2sk2996 k299 transistor 2sk2996 2SK2996 equivalent toshiba motor
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		2SK2996 k2996 k2996 transistor K2996 equivalent equivalent k2996 transistor k2996 2sk2996 k299 transistor 2sk2996 2SK2996 equivalent toshiba motor PDF

    k2996

    Abstract: k2996 transistor k299 transistor k2996
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		2SK2996 k2996 k2996 transistor k299 transistor k2996 PDF

    K2996

    Abstract: k2996 transistor transistor k2996 2SK2996 toshiba k2996
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		2SK2996 K2996 k2996 transistor transistor k2996 2SK2996 toshiba k2996 PDF

    k2996

    Abstract: K2996 equivalent k2996 transistor 2sk2996 2SK2996 equivalent transistor k2996 equivalent k2996
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance z Low leakage current


    Original     		2SK2996 k2996 K2996 equivalent k2996 transistor 2sk2996 2SK2996 equivalent transistor k2996 equivalent k2996 PDF