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    K27 MOSFET Search Results

    K27 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    K27 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K27 mOSFET

    Abstract: MARKING K27 2N7002KDW LA sot363 2N7002KD k27 sot-363 60V N-Channel Enhancement Mode MOSFET - ESD Protected
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 • RDS ON , VGS@10V,IDS@500mA=3Ω Unit: inch (mm) 0.054(1.35) 0.045(1.15) • High Density Cell Design For Ultra Low On-Resistance 0.030(0.75) 0.021(0.55) 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology


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    2N7002KDW OT-363 500mA 200mA OT-363 2010-REV K27 mOSFET MARKING K27 2N7002KDW LA sot363 2N7002KD k27 sot-363 60V N-Channel Enhancement Mode MOSFET - ESD Protected PDF

    K27 SOT-363 MARKING

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) FEATURES 0.087(2.20) 0.078(2.00)


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    2N7002KDW 200mA 2002/95/EC OT-363 MIL-STD-750 2010-REV OT-363 K27 SOT-363 MARKING PDF

    2N7002KDW

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


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    2N7002KDW 500mA 200mA 2002/95/EC OT-363 MIL-STD-750 2N7002KDW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


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    2N7002KDW OT-363 500mA 200mA 2002/95/EC IEC61249 2010-REV RB500V-40 2N7002KDW PDF

    K2765

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


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    2N7002KDW 500mA 200mA 2002/95/EC IEC61249 OT-363 OT-363 2010-REV RB500V-40 K2765 PDF

    sot-363 n-channel mosfet

    Abstract: K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


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    2N7002KDW 500mA 200mA 2002/95/EC IEC61249 OT-363 OT-363 2010-REV RB500V-40 sot-363 n-channel mosfet K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)


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    2N7002KDW 500mA 200mA OT-363 OT-363 MIL-STD-750 2010-REV PDF

    s4 schottky

    Abstract: power mosfet IR ag33 diode AE-35 n34 transistor fairchild AG33 rPGA-989 ag31 diode fairchild aa35 fairchild AG28
    Text: Application Note 1545 Author: Jia Wei ISL62884CEVAL2Z Evaluation Board User Guide Hardware Description Interface Connections The ISL62884CEVAL2Z evaluation board demonstrates the performance of the ISL62884C single-phase synchronous-buck PWM VCORE controller implementing


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    ISL62884CEVAL2Z ISL62884C AN1545 s4 schottky power mosfet IR ag33 diode AE-35 n34 transistor fairchild AG33 rPGA-989 ag31 diode fairchild aa35 fairchild AG28 PDF

    fairchild Af34

    Abstract: S4 Schottky an1552 power mosfet IR TP31-TP33 K34 mosfet diode c82 C40-C43 nec aj8 burndy Y35
    Text: Application Note AN1552 Author: Jia Wei ISL62881CCPUEVAL2Z Evaluation Board User Guide Hardware Description Interface Connections The ISL62881CCPUEVAL2Z evaluation board demonstrates the performance of the ISL62881C single-phase synchronous-buck PWM VCORE controller


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    AN1552 ISL62881CCPUEVAL2Z ISL62881C AN1552 fairchild Af34 S4 Schottky power mosfet IR TP31-TP33 K34 mosfet diode c82 C40-C43 nec aj8 burndy Y35 PDF

    intel g41 crb

    Abstract: AJ33 AJ34 AJ35 AJ36 AJ37 AJ38 AJ39 AJ40 AJ41 AJ42 schematic intel g41 g31 crb socket am3 pinout g41 crb MOSFET BA7 intel G41 MOTHERBOARD crb LGA1366 ISL6334EVAL1Z
    Text: Technical Brief 486 ISL6334EVAL1Z User Guide Board Specifications 1. Intel VR11.1 compliant. 2. 4-Phase, 130W, 400kHz, Load Line = 0.8mΩ. 3. Socket: LGA1366, die sensing, can be configured for motherboard sensing. 4. 6 Layer Board: Top/Bottom - 0.5oz plated, 1.5oz


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    ISL6334EVAL1Z 400kHz, LGA1366, ISL6612A, ISL6622) ISL6596/ISL6620) TB486 intel g41 crb AJ33 AJ34 AJ35 AJ36 AJ37 AJ38 AJ39 AJ40 AJ41 AJ42 schematic intel g41 g31 crb socket am3 pinout g41 crb MOSFET BA7 intel G41 MOTHERBOARD crb LGA1366 PDF

    AN15530

    Abstract: K34 mosfet fairchild aa35 rPGA-989 AN1553 CM21X5R226M04AT GRM21BC80J226M C2012X5R0J226MT009N panasonic cpu am32 fairchild Ah7
    Text: Application Note AN1553 Author: Jia Wei ISL62881CGPUEVAL2Z Evaluation Board User Guide Hardware Description Interface Connections The ISL62881CGPUEVAL2Z evaluation board demonstrates the performance of the ISL62881C single-phase synchronous-buck PWM GPU VCORE


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    AN1553 ISL62881CGPUEVAL2Z ISL62881C ISL62881C Conte1553 AN1553 AN15530 K34 mosfet fairchild aa35 rPGA-989 CM21X5R226M04AT GRM21BC80J226M C2012X5R0J226MT009N panasonic cpu am32 fairchild Ah7 PDF

    K34 mosfet

    Abstract: sot23 w32 ISL62882c vss 1558 rPGA-989 AN1558 ag30 transistor ONSEMI diode a30 transistor r14 ah16 socket am2 am3
    Text: Application Note 1558 Author: Jia Wei ISL62882CEVAL2Z User Guide Introduction Interface Connections The ISL62882CEVAL2Z evaluation board demonstrates the performance of the ISL62882 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5 protocol. The ISL62882 features Intersil's


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    ISL62882CEVAL2Z ISL62882 AN1558 K34 mosfet sot23 w32 ISL62882c vss 1558 rPGA-989 ag30 transistor ONSEMI diode a30 transistor r14 ah16 socket am2 am3 PDF

    r58 ah16

    Abstract: ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208
    Text: Application Note 1557 Author: Jia Wei ISL62883CEVAL2Z User Guide Introduction Interface Connections The ISL62883CEVAL2Z evaluation board demonstrates the performance of the ISL62883 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5 protocol. The ISL62883 features Intersil's


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    ISL62883CEVAL2Z ISL62883 AN1557 r58 ah16 ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208 PDF

    r58 ah16

    Abstract: am2 SOCKET PIN LAYOUT burndy Y35 AG34 diode irf7832 ISL62883 K34 mosfet ONSEMI diode a30 burndy socket am2 am3
    Text: ISL62883EVAL2Z User Guide Application Note April 8, 2009 AN1460.0 Author: Jia Wei Introduction Interface Connections The ISL62883EVAL2Z evaluation board demonstrates the performance of the ISL62883 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5


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    ISL62883EVAL2Z AN1460 ISL62883 r58 ah16 am2 SOCKET PIN LAYOUT burndy Y35 AG34 diode irf7832 K34 mosfet ONSEMI diode a30 burndy socket am2 am3 PDF

    diode C531

    Abstract: c531 diode lga775 schematic transistor C535 60N02R C536 VCC3 1156 01 85n02 C532 diode u504
    Text: NCP5318DEMO NCP5318 Four Phase Demonstration Board Note Switching Regulator Controller http://onsemi.com DEMONSTRATION NOTE Features Protection Features • Programmable 2/3/4 Phase Operation • Lossless Current Sensing • Enhanced V2 Control Method Provides Fast Transient


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    NCP5318DEMO NCP5318 NCP5318DEMO/D diode C531 c531 diode lga775 schematic transistor C535 60N02R C536 VCC3 1156 01 85n02 C532 diode u504 PDF

    ah30 diode

    Abstract: AH34 mosfet ak24 diode thermistor M33 irf7832 ISL62882 n34 transistor w8 mosfet transistor c36 Burndy y34 lug specifications
    Text: ISL62882EVAL2Z User Guide Application Note April 9, 2009 AN1461.0 Author: Jia Wei Introduction Interface Connections The ISL62882EVAL2Z evaluation board demonstrates the performance of the ISL62882 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5


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    ISL62882EVAL2Z AN1461 ISL62882 ah30 diode AH34 mosfet ak24 diode thermistor M33 irf7832 n34 transistor w8 mosfet transistor c36 Burndy y34 lug specifications PDF

    r58 ah16

    Abstract: ISL62883HRZ rPGA-989 ISL62883 TEK131-4353-00 thermistor R53 burndy Y35 irf7832 burndy CONNECTOR Burndy y34 lug specifications
    Text: ISL62883EVAL2Z User Guide Application Note July 13, 2009 AN1460.1 Author: Jia Wei Introduction Interface Connections The ISL62883EVAL2Z evaluation board demonstrates the performance of the ISL62883 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5


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    ISL62883EVAL2Z AN1460 ISL62883 r58 ah16 ISL62883HRZ rPGA-989 TEK131-4353-00 thermistor R53 burndy Y35 irf7832 burndy CONNECTOR Burndy y34 lug specifications PDF

    diode in48

    Abstract: IN58 diode SN105125
    Text: User's Guide SBAU186 – March 2011 DDC264EVM User's Guide DDC264EVM This user's guide describes the characteristics, operation, and use of the DDC264EVM. This evaluation module EVM is an evaluation kit for evaluating the DDC264, a 64-channel, current input, 20-bit


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    SBAU186 DDC264EVM DDC264EVM DDC264EVM. DDC264, 64-channel, 20-bit DDC264 DDC264EVMm diode in48 IN58 diode SN105125 PDF

    813LN

    Abstract: 82c495 b30 c300 - 1 RC410M APL5531-LF 20493-21 RC400MB-AGTL ati sb400 IT8712 NS0013 LF
    Text: 1 2 3 4 6 7 8 EW6 VCC_CORE CPU CORE 5 Page:26 CLOCK GEN ICS951413CGLFT A +3VPCU +3V_S5/+3VSUS +3V CELERON-M/PENTIUM-M +3VPCU +3V_S5 A Page:4 +3VSUS INTEL Mobile_479 CPU +3V Page:2, 3 +5VSUS +5VSUS/+5V +12V +5V Page:24 +12V HOST BUS 400MHZ +1.8VSUS +1.8VSUS/+1.8V


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    ICS951413CGLFT 400MHZ RC410MB/RC410MD PCI1510A 158K-0402-LF 1000P/50V-LF 174K-0603-LF 7K-0402-LF 1000P/50V-LF 0R-0603-LF 813LN 82c495 b30 c300 - 1 RC410M APL5531-LF 20493-21 RC400MB-AGTL ati sb400 IT8712 NS0013 LF PDF

    msi ms7

    Abstract: RTL8101L ATI-RS480M F26 smd regulator C-258 ati sb400 Socket 754 "Socket 754" micro-star medion
    Text: 5 MSI 4 3 2 1 MS-1013 Ver:0B D D DDR 333/400 AMD K8 Socket 754 2~5 6,7 HT LVDS LCD C DDR SODIMM * 2 Clock Generator North Bridge 25 CRT 14 ATI RS480M RGB 8~12 25 LAN Realtec 8101L Mini PCI Socket 20 USB 2.0 x3 C USB 29 PCI 27 B South Bridge PIDE HDD LPC 24


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    MS-1013 RS480M 8101L R5C593 SB400 ENE3910 ALC655 TPA0202 MS1013 R240-- msi ms7 RTL8101L ATI-RS480M F26 smd regulator C-258 ati sb400 Socket 754 "Socket 754" micro-star medion PDF

    TP1017

    Abstract: P00-1013120-D05 MS7050 HC14G RTL8101L 8P4R-0R0402 AO4805 D0803 C1373 medion
    Text: 5 MSI 4 3 2 1 MS-1013 Ver:1.3 D D DDR 333/400 AMD K8 Socket 754 2~5 6,7 HT LVDS LCD C DDR SODIMM * 2 Clock Generator North Bridge 25 CRT 14 ATI RS482M RGB 8~12 25 LAN Realtec 8101L Mini PCI Socket 20 USB 2.0 x3 C USB 29 PCI 27 B South Bridge PIDE HDD LPC 24


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    MS-1013 RS482M 8101L R5C593 SB400 ENE3910 ALC655 TPA0202 MS1013 Tuesday668 TP1017 P00-1013120-D05 MS7050 HC14G RTL8101L 8P4R-0R0402 AO4805 D0803 C1373 medion PDF

    max8736

    Abstract: CI846 CI867 CI-8348 SAMA5 ct305 CI845 foxconn CI854 ICS951413CGLFT
    Text: 5 4 3 2 1 +3V +5V MS1024 EVT VER:0.B Intel Yonha CPU+ ATi RC410ME&SB450 Chipset D C 01:BLOCK DIAGRAM 02:PLATFORM 03:Yonah-1 CPU HOST BUS 04:Yonah-2 CPU (POWER/GND) 05:Yonah-3 06:RC410ME(HOST) 07:RC410ME(DDR) 08:RC410ME(VIDEO/PCI-E) 09:RC410ME(POWER/STRAPS)


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    MS1024 RC410ME SB450 951413CGLFTB) max8736 CI846 CI867 CI-8348 SAMA5 ct305 CI845 foxconn CI854 ICS951413CGLFT PDF

    brush dc motor control 200v 20a

    Abstract: No abstract text available
    Text: PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION_ _ _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses M O SFETs in the output stage while the


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    PWR-82340 PWR-82342 PWR-82342 8234X-XX0 PWR-82340/342 brush dc motor control 200v 20a PDF

    TT 2188 transistor

    Abstract: 12w transistor 82331
    Text: QQB PWR-82331 and PWR-82333 ILC DATA DEVICE _ CORPORATIONS_ SMART POWER 3-PHASE MOTOR DRIVES ê: DESCRIPTION APPLICATIONS The PWR-82331 and PW R-82333 are 30 A 3-phase m otor drive hybrids. The PWR-82331 has a +200 V rating and uses M O SFETs in the output stage


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    PWR-82331 PWR-82333 R-82331/333 PWR-82333 TT 2188 transistor 12w transistor 82331 PDF