IC H 102 D6
Abstract: V23990-K240-A-PM
Text: V23990-K240-A-PM MiniSKiiP 3 PIM 1200V/70A MiniSkiip® 3 housing Features ● IGBT3 technology for low saturation losses ● Solderless spring contact mounting system Target Applications Schematic ● Industrial motor drives Types ● V23990-K240-A-PM Maximum Ratings
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V23990-K240-A-PM
200V/70A
IC H 102 D6
V23990-K240-A-PM
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Knox Diodes K120
Abstract: k390 Knox Semiconductor zener K270 K430 K120 K150 K180 K210 K240
Text: KNOX SEMICONDUCTOR, INC. A unique manufacturing process allows Knox Semiconductor to supply a range of Very Low Voltage Diodes having the lowest reverse leakage currents and low impedance at currents specified at 10 mA and below. These devices will find use in applications where conservation of battery life is a primary concern.
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K300
Abstract: k390 K430 K240 K510 zener K270 K120 K150 K180 K210
Text: LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below PART NUMBER K120 K150 K180
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Untitled
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT2480-xN-xnnnx Series HUW0224003-01B February 26, 2003 Preliminary Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module: Transmitter Optical Sub-assembly in small PKG for CWDM of 2.5Gb/s transmission
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SLT2480-xN-xnnnx
HUW0224003-01B
HUW0224003-01A
HUW0224003-01B
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Untitled
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx-xnnnx Series HUW0424128-01A November 4, 2004 Preliminary Specification of 1.29µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx-xnnnx Series
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SLW4470-xx-xnnnx
HUW0424128-01A
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1350nm
Abstract: h885 kounosu
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT1430-xnnnx Series HUW0024094-01E August 26, 2003 Technical Specification of 1. 27µm~1.61µm MQW-DFB Laser Diode with Aspherical Lens Cap for CWDM SLT1430-xnnnx Series Page 1 of 8
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SLT1430-xnnnx
HUW0024094-01E
HUW0024094-01C
May/21/02
HUW0024094-01D
HUW0024094-01E
1350nm
h885
kounosu
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xnnnx
Abstract: SLT1440-xnnnx K605A 1350nm HUW0224035-01F h260a HUW0224035-01E h885 1293 nm laser diodes 1470nm
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT1440-xnnnx Series HUW0224035-01F May 9, 2008 Technical Specification of 1. 27µm~1.61µm MQW-DFB Laser Diode with Aspherical Lens Cap of Short Focal Distance Type for CWDM SLT1440-xnnnx Series
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SLT1440-xnnnx
HUW0224035-01F
1330nm,
1350nm,
1370nm,
1430nm
xnnnx
K605A
1350nm
HUW0224035-01F
h260a
HUW0224035-01E
h885
1293 nm laser diodes
1470nm
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xnnnx
Abstract: 1350nm 1450nm laser diode HUW9924209-01E 1370nm h885 HUW9924209-01D E855A G675 1450nm
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT2420-xN-xnnnx Series HUW9924209-01E December 04, 2002 Preliminary Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module: Transmitter Optical Sub-assembly for CWDM of 622Mb/s and 2.5Gb/s transmission
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SLT2420-xN-xnnnx
HUW9924209-01E
622Mb/s
HUW9924209-01D
100nA;
F095x
xnnnx
1350nm
1450nm laser diode
HUW9924209-01E
1370nm
h885
E855A
G675
1450nm
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1350nm
Abstract: SLT2486-LN SLT2486 E855A h885 xnnnx HUW0824103-01A RH2-xnnnx
Text: Sumitomo Electric Industries, Ltd. Part No.: SLT2480-xN/RH2-xnnnx Series Document No.: HUW0824103-01A Data of issue: August 19, 2008 Technical Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module: Transmitter Optical Sub-assembly in small PKG for CWDM of 2.5Gb/s transmission
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SLT2480-xN/RH2-xnnnx
HUW0824103-01A
HUW0824103-01A
1350nm
SLT2486-LN
SLT2486
E855A
h885
xnnnx
RH2-xnnnx
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xnnnx
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4470-xx-xnnnx Series HUW0424128-01C June 26, 2007 Preliminary Specification of 1.29µm-1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx-xnnnx Series
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SLW4470-xx-xnnnx
HUW0424128-01C
HUW0424128-01A
HUW0424128-01B
xnnnx
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1350nm
Abstract: HUW0224035-01E K605A
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Data of issue: SLT1440-xnnnx Series HUW0224035-01E October 13, 2004 Technical Specification of 1. 27µm~1.61µm MQW-DFB Laser Diode with Aspherical Lens Cap of Short Focal Distance Type for CWDM SLT1440-xnnnx Series
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SLT1440-xnnnx
HUW0224035-01E
aspherical01B
HUW0224035-01C
1270nm,
1290nm,
1350nm
HUW0224035-01E
K605A
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xnnnx
Abstract: Microwave Transmission applications
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLW4460-xnnnx Series HUW0224074-01E June 26, 2007 Technical Specification of 1.29µm~1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4460-xnnnx Series RoHS Compliant
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SLW4460-xnnnx
HUW0224074-01E
HUW0224074-01A
HUW0224074-01B
xnnnx
Microwave Transmission applications
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IEC-60874-14
Abstract: RH2-xnnnx xnnnx K240 diode Microwave Transmission applications SLW4460-PS 1348 1350nm h885 HUW0724125-01A
Text: Sumitomo Electric Industries, Ltd. Part No.: SLW4460-xx/RH2-xnnnx Series Document No.: HUW0724125-01A Date of issue: January 28, 2008 Technical Specification of 1.29µm~1.57µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4460-xx/RH2-xnnnx Series
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SLW4460-xx/RH2-xnnnx
HUW0724125-01A
HUW0724125-01A
IEC-60874-14
RH2-xnnnx
xnnnx
K240 diode
Microwave Transmission applications
SLW4460-PS
1348
1350nm
h885
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xnnnx
Abstract: h260a 1350nm h885 HUW0724102-01A SLW4470 RH2-xnnnx
Text: Sumitomo Electric Industries, Ltd. Part No.: SLW4470-xx/RH2-xnnnx Series Document No.: HUW0724102-01A Date of issue: December 28, 2007 Technical Specification of 1.27µm-1.61µm MQW-DFB Laser Diode Module for Optical Microwave Transmission SLW4470-xx/RH2-xnnnx Series
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SLW4470-xx/RH2-xnnnx
HUW0724102-01A
HUW0724102-01A
xnnnx
h260a
1350nm
h885
SLW4470
RH2-xnnnx
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HUW0724107-01A
Abstract: xnnnx RH2-xnnnx 1350nm SUMITOMO slt4466 G675A sc 1287 1430nm
Text: Sumitomo Electric Industries, Ltd. Part No.: SLT4460-xx/RH2xnnnx Series Document No.: HUW0724107-01A Date of issue: January 14, 2008 Technical Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module for CWDM of 622Mb/s and 2.5Gb/s transmission SLT4460-xx/RH2-xnnnx Series
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SLT4460-xx/RH2xnnnx
HUW0724107-01A
622Mb/s
SLT4460-xx/RH2-xnnnx
HUW0724107-01A
xnnnx
RH2-xnnnx
1350nm
SUMITOMO slt4466
G675A
sc 1287
1430nm
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xnnnx
Abstract: HUW9924208-01I 1350nm SLT4410-xnnnx K605A mqw-dfb* 1550nm D 1427 k605
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT4410-xnnnx Series HUW9924208-01I January 14, 2008 Technical Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module for CWDM of 622Mb/s and 2.5Gb/s transmission SLT4410-xnnnx Series
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SLT4410-xnnnx
HUW9924208-01I
622Mb/s
125mW/mA
15mW/mA;
xnnnx
HUW9924208-01I
1350nm
K605A
mqw-dfb* 1550nm
D 1427
k605
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Untitled
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT4410-xnnnx Series SLT4460-xnnnx Series HUW9924208-01G August 22, 2002 Technical Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module for CWDM of 622Mb/s and 2.5Gb/s transmission
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SLT4410-xnnnx
SLT4460-xnnnx
HUW9924208-01G
622Mb/s
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SLT4410-xnnnx
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: SLT4410-xnnnx Series SLT4460-xnnnx Series HUW9924208-01H June 27, 2006 Technical Specification of 1.27µm~1.61µm MQW-DFB Laser Diode Module for CWDM of 622Mb/s and 2.5Gb/s transmission
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SLT4410-xnnnx
SLT4460-xnnnx
HUW9924208-01H
622Mb/s
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Untitled
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c . A unique manufacturing process allows Knox Semiconductor to supply a range o f Very Low Voltage Diodes having the lowest reverse leakage currents and low impedance at currents specified at 10 mA and below. These devices
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Untitled
Abstract: No abstract text available
Text: } Low Level Zener Diodes VERY LOW VOLTAGE Type Nominal Number Zener Voilage Max Zz Vz @ Iz = 10 mA Vdc. Dynamic Impedance Reverse Current @ I = 10 mA Ma* Zzk @ L 1 mA Max Ir Vr (ohms) i oh TISI I m A> (Vdc) @ 25 C K 120 1 2 17 100 05 0 .4 K150 15 17 100
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250\iA
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K511
Abstract: k390 K120 K300 zener K270 K150 K180 K210 K240 K270
Text: 5238534 KNOX SEMICONDUCTOR 99D INC 00131 D •' O ? D E l s a 3 f l 5 3 i 4 DDDG131 T f Low Level Zener D iodes • VERY LOW VOLTAGE Reverse Current Dynamic Impedance Max Zzk Type Nominal Number Zener Voltage M axZz V z@ lz = 10 mA @ l = 10m A @ I = 1 mA
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dddgi31
-K681
250\lA
K511
k390
K120
K300
zener K270
K150
K180
K210
K240
K270
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Knox Semiconductor
Abstract: zener K270 K300 K120 K150 K180 K210 K240 K270 K330
Text: K n o x S e m ic o n d u c t o r , I n c A unique manufacturing process allows Knox Semiconductor to supply a range o f Very Low Voltage Diodes having the lowest reverse leakage currents and low impedance at currents specified at 10 mA and below. These devices
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QQ0Q24Q
DO-35
Knox Semiconductor
zener K270
K300
K120
K150
K180
K210
K240
K270
K330
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Untitled
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c A unique manufacturing process allow s Knox Semiconductor to supply a range o f Very Low Voltage D iodes having the lowest reverse leakage currents and low impedance at currents specified at 10 m A and below . These devices
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S23A53M
0G0G232
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07 K150
Abstract: 07 K300
Text: K n o x S e m ic o n d u c t o r , I n c . A unique manufacturing process allow s Knox Semiconductor to supply a range o f Very Low Voltage D iodes having the lowest reverse leakage currents and low impedance at currents specified at 10 m A and below. These devices
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