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    K1B3216BDD Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K1B3216BDD Samsung Electronics 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Original PDF

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    UtRAM

    Abstract: K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H
    Text: Write method & Mode Change This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA - K1B6416B6C, K1B3216BDD June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD


    Original     		PDF K1B5616B2M, K1B5616BAM, K1B5616BBM K1B2816B2A, K1B2816BAA, K1B2816BBA K1B6416B6C, K1B3216BDD 5555h) 5555h UtRAM K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H

    K1B3216BDD

    Abstract: UtRAM Density
    Text: K1B3216BDD UtRAM Document Title 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target September 02, 2004 Preliminary 0.1 Revised - Corrected the name of 9th row of balls on the pakage to ’J’ from ’I’


    Original     		PDF K1B3216BDD 2Mx16 K1B3216BDD UtRAM Density