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    K 92 TRANSISTOR Search Results

    K 92 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 92 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    e13001

    Abstract: transistor E13001 e13001 TRANSISTOR E1300 IC e13001 TRANSISTOR K 135
    Text: POWER TRANSISTOR E13001 SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-92 molded plastic body TO-92 A DIM B R P L F K D G H J V NPN SILICON TRANSISTOR FEATURES A B C D F G H J K


    Original     		PDF E13001 100mA e13001 transistor E13001 e13001 TRANSISTOR E1300 IC e13001 TRANSISTOR K 135

    E13002

    Abstract: E13002 transistor transistor E13002 npn 600v to92 E1300
    Text: POWER TRANSISTOR E13002 SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-92 molded plastic body TO-92 A DIM B R A B C D F G H J K L N P R V SEATING PLANE P L F K D G H J V NPN SILICON TRANSISTOR


    Original     		PDF E13002 100mA 200mA E13002 E13002 transistor transistor E13002 npn 600v to92 E1300

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA05/55 AMPLIFIER TRANSISTOR NPN MPSA05 PNP MPSA55  FEATURES 1 * Collector-Emitter Voltage: VCEO=60V TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MPSA05L-T92-B MPSA05G-T92-B MPSA05L-T92-K MPSA05G-T92-K


    Original     		PDF MPSA05/55 MPSA05 MPSA55 MPSA05L-T92-B MPSA05G-T92-B MPSA05L-T92-K MPSA05G-T92-K MPSA55L-T92-B MPSA55G-T92-B MPSA55L-T92-K

    operation of BC557 TRANSISTOR

    Abstract: TRANSISTOR C 557 B transistor c 557 BC557 SWITCHING TRANSISTOR transistor 557 b of pnp transistor BC557 B 557 PNP TRANSISTOR transistor bc558 features free BC557 TRANSISTOR 557
    Text: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 „ ORDERING INFORMATION Normal BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B


    Original     		PDF BC556/557/558 BC556, BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K BC556L-x-T92-B BC556L-x-T92-K operation of BC557 TRANSISTOR TRANSISTOR C 557 B transistor c 557 BC557 SWITCHING TRANSISTOR transistor 557 b of pnp transistor BC557 B 557 PNP TRANSISTOR transistor bc558 features free BC557 TRANSISTOR 557

    Untitled

    Abstract: No abstract text available
    Text: 2SA562 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearlity G  Emitter  Collector  Base H J A REF. D A B C D E F G H J K B K


    Original     		PDF 2SA562 -100mA -20mA 29-Apr-2010

    transistor j511

    Abstract: ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode
    Text: J500 SERIES CURRENT REGULATING DIODES Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V A A K K 1 ABSOLUTE MAXIMUM RATINGS TO-92 BOTTOM VIEW @ 25 °C unless otherwise stated


    Original     		PDF 360mW transistor j511 ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode

    D882S

    Abstract: TRANSISTOR D882S datasheet d882
    Text: D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Power Dissipation G H J A CLASSIFICATION OF hFE REF. D A B C D E F G H J K B K Rank Range R Y GR


    Original     		PDF D882S 08-Oct-2010 D882S TRANSISTOR D882S datasheet d882

    MPSA42

    Abstract: No abstract text available
    Text: MPSA42 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G H Emitter  J A REF. D  A B C D E F G H J K B Base K 


    Original     		PDF MPSA42 30MHz 02-Apr-2010 MPSA42

    MPSA44

    Abstract: No abstract text available
    Text: MPSA44 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G H Emitter  J A REF. D  A B C D E F G H J K B Base K 


    Original     		PDF MPSA44 30MHz 02-Apr-2010 MPSA44

    Untitled

    Abstract: No abstract text available
    Text: B772S PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low speed switching. G  Emitter  Collector  Base H J A D A B C D E F G H J K B K E C Millimeter


    Original     		PDF B772S 10MHz 07-May-2010

    Untitled

    Abstract: No abstract text available
    Text: FJN4309R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R = 4.7 kΩ • Complement to FJN3309R Application • Switching Application (Integrated Bias Resistor) 1 TO-92


    Original     		PDF FJN4309R FJN3309R FJN4309RTA R4309 FJN4309R

    BF422G

    Abstract: transistor BF422
    Text: UNISONIC TECHNOLOGIES CO., LTD BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  FEATURES * Collector-Emitter Voltage: VCEO=250V. * Complementary to UTC BF423. 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free BF422L-T92-B BF422L-T92-K


    Original     		PDF BF422 BF423. BF422L-T92-B BF422L-T92-K BF422G-T92-B BF422G-T92-K QW-R201-063 BF422G transistor BF422

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD X1049A NPN SILICON TRANSISTOR HIGH GAIN TRANSISTOR „ FEATURES * VCEV = 80V * High Gain * 20 Amps pulse current 1 TO-92 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free X1049AL-T92-B X1049AG-T92-B X1049AL-T92-K


    Original     		PDF X1049A X1049AL-T92-B X1049AG-T92-B X1049AL-T92-K X1049AG-T92-K X1049AL-T92-R X1049AG-T92-R QW-R201-061

    2sc3355

    Abstract: NPN transistor to-92 2SC3355L 2sc3355g
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER „ FEATURES * Low Noise and High Gain * High Power Gain 1 TO-92 „ ORDERING INFORMATION Normal 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R 2SC3355L-T92-B


    Original     		PDF 2SC3355 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R 2SC3355L-T92-B 2SC3355L-T92-B 2SC3355L-T92-K 2SC3355L-T92-R 2SC3355G-T92-B 2SC3355G-T92-K 2sc3355 NPN transistor to-92 2SC3355L 2sc3355g

    MPSA06

    Abstract: MPSA05 transistor MPSA06 vishay MPSA05 TO-92 CASE MPSA06 mpsa06 200 MPSA06 transistor
    Text: MPSA05 / MPSA06 NPN SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages K M h M TO-92 Dim Min Max Mechanical Data_ A 4.32 4.83 B 4.32 4.78 Case: TO-92, Plastic


    OCR Scan     		PDF MPSA05 MPSA06 MIL-STD-202, MPSA06 100nA, transistor MPSA06 vishay MPSA05 TO-92 CASE MPSA06 mpsa06 200 MPSA06 transistor

    mps-AO5 transistor

    Abstract: MPSA06 MPSA05 TO-92 CASE MPSA06 transistor MPSA06
    Text: 3 K MPSA05 / MPSA06 NPN SMALL SIGNAL TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages TO-92 Mechanical Data Case: TO -92, Plastic Leads: Solderable per M IL-STD-202,


    OCR Scan     		PDF MIL-STD-202, MPSA06 MPSA05 MPSA06 100pA, PSA05 100mA mps-AO5 transistor TO-92 CASE MPSA06 transistor MPSA06

    2N3564

    Abstract: 2N3606 2N3565 pin 2N3605 2N3607 TO-921 2N33 2N3565 2N27 2N3417
    Text: TO-92 B-H T < 3 2 1 DIM MIN MAX A 4,32 5,33 B 4,45 1 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5D E G G 1,14 1,40 H 1,14 1,53 K 12,70 - ALL DIMENSIONS IN M.M. Pin Configuration Available in TO-92 SJ - - A iM r o V3 2 1 / CDU. Code Style Pin 1 TO-92 Pin 2


    OCR Scan     		PDF O-92-1 O-92-2 O-92-3 O-92-4 2N3564 2N3606 2N3565 pin 2N3605 2N3607 TO-921 2N33 2N3565 2N27 2N3417

    2N3565

    Abstract: 2N3606 2n2714 transistor 2N3605 2N3564 2N2712 2N360 transistor 2N3565 transistor 2n2712 2N3565 NPN Transistor
    Text: TO-92 DIM MIN MAX A 4,32 5,33 T B 4,45 1 5,20 C 3,18 4,19 < D 0,41 0,55 E 0,35 0,50 B -H 3 2 1 F 5D E G G 1,14 1,40 H 1,14 1,53 K 12,70 - ALL DIMENSIONS IN M.M. Pin Configuration Available in TO-92 SJ — 'A iM f V3 o 2 1 / CDU. Code Style Pin 1 TO-92 Pin 2


    OCR Scan     		PDF O-92-1 O-92-2 O-92-3 O-92-4 2N3565 2N3606 2n2714 transistor 2N3605 2N3564 2N2712 2N360 transistor 2N3565 transistor 2n2712 2N3565 NPN Transistor

    2SD592

    Abstract: 2SB621 2SB621A 2SD592A
    Text: 2SB621,A 2SD592,A k. ' . ; •’■;■■ ■,} > '•■ 5?# K V - - . ;-; ’ « ' 5 sT; fv s-V-Îï ” ■-'i, SILICON TRANSISTORS TO-92 . ■ í í /*:■■? V~- 2SB621,A PNP & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for


    OCR Scan     		PDF 2SB621 2SD592 2SD592A 2SB621A 750mW

    Untitled

    Abstract: No abstract text available
    Text: ter P * FORWARD INTBRNAHONAL ELECTRONICS LTD. KTA1270 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. Package: TO-92 FEATURES * Excellent Hfe Linearity: Hfe 2 =25(M m.) at Vce=-6V,Ic=^K)0mA


    OCR Scan     		PDF KTA1270 KTC3202 -100mA -400mA -100mA -10mA -20mA

    Untitled

    Abstract: No abstract text available
    Text: 2SC1923 SEMICONDUCTOR forward international b u c t r q n k s ltd . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS, FM,RF,M3XJF AMPLIFIER APPLICATIONS. Package: TO-92 * Small Reverse Transfer Capacitance:Cr^=0,7pF TYP,


    OCR Scan     		PDF 2SC1923 100MHZ) 100uA

    BC264A

    Abstract: BC264D IEC134
    Text: BC264A to D J k _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in­ tended for hi-fi amplifiers and other audio-frequency equipment. max. 30 V


    OCR Scan     		PDF BC264A G03S715 BC264D IEC134

    PN4356

    Abstract: PN4355 PN4354
    Text: Datasheet PN4354 PN4355 PN4356 Central K ilH l • Semiconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-92 CASE (EBC) Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF PN4354 PN4355 PN4356 PN4354 PN4356 100/iA 100mA

    NPN 2907A EBC

    Abstract: 2907A EBC 2222a pn
    Text: small Signal Transistors TO-92 Case Continued TO-92 T Y P E MO, F A M IL Y LEA D CODE VC B O v CEO v EBO (V) 00 MW *^ C 6 S U ftf MU'! IliN ipstf* *e s 8 "fe w m * WS; •CBO s* V C BC - m • V c s *» c W (V ) MN ' - m (*A ) v C E fS A K > « * C 00 (« A )


    OCR Scan     		PDF PN3S63 PN3564 PN3565 PN3566 PN3567 PN3568 PN3569 PN3638A PN3639 PN3640 NPN 2907A EBC 2907A EBC 2222a pn