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    K 845 MOSFET Search Results

    K 845 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    K 845 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Case 449-02

    Abstract: No abstract text available
    Text: Document Number: MRF9582NT1 Rev. 1, 7/2006 Freescale Semiconductor Technical Data Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET MRF9582NT1 849 MHz, 38 dBm, 12.5 V HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 3 1 ARCHIVE INFORMATION ARCHIVE INFORMATION


    Original     		PDF MRF9582NT1 Case 449-02

    A113

    Abstract: MRF9582NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 1, 7/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.


    Original     		PDF MRF9582NT1 A113 MRF9582NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 0, 5/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.


    Original     		PDF MRF9582NT1 MRF9582NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 0, 5/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.


    Original     		PDF MRF9582NT1 MRF9582NT1

    Case 449-02

    Abstract: MRF9582NT1 855F
    Text: Document Number: MRF9582NT1 Rev. 1, 7/2006 Freescale Semiconductor Technical Data Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET MRF9582NT1 849 MHz, 38 dBm, 12.5 V HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 3 1 ARCHIVE INFORMATION ARCHIVE INFORMATION


    Original     		PDF MRF9582NT1 Case 449-02 MRF9582NT1 855F

    Case 449-02

    Abstract: A113 MRF9582NT1
    Text: Freescale Semiconductor Technical Data Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Typical CW RF Performance @ 849 MHz: VDD = 12.5 Volts, IDQ = 300 mA,


    Original     		PDF MRF9582NT1 Case 449-02 A113 MRF9582NT1

    MRF373A

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373A/D MRF373A MRF373AS

    MRF373A

    Abstract: MRF373AR1 MRF373AS MRF373ASR1
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A/D MRF373AR1 MRF373ASR1 MRF373A MRF373AS MRF373ASR1

    MRF373A

    Abstract: MRF373ALSR1 MRF373AR1 MRF373AS 845MHz
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A/D MRF373AR1 MRF373ALSR1 MRF373A MRF373ALSR1 MRF373AS 845MHz

    MRF373A

    Abstract: MRF373 MRF373AS VJ3640Y225KXBAT chip capacitor vishay
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A/D MRF373A MRF373AS MRF373 MRF373AS VJ3640Y225KXBAT chip capacitor vishay

    845 motherboard circuit

    Abstract: MRF377 0603HC-10NXJB Coilcraft Rogers 3006 MRF377R3 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5
    Text: MOTOROLA Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377/D MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3 845 motherboard circuit 0603HC-10NXJB Coilcraft Rogers 3006 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5

    transistor amplifier 1ghz 1400 watts

    Abstract: nippon capacitors 0603HC-10NXJB Nippon chemi
    Text: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 transistor amplifier 1ghz 1400 watts nippon capacitors 0603HC-10NXJB Nippon chemi

    nippon capacitors

    Abstract: dvbt transmitter j564 Nippon chemi
    Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 nippon capacitors dvbt transmitter j564 Nippon chemi

    MRF373A

    Abstract: MRF373ALR1 MRF373ALSR1 MRF373AS
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1


    Original     		PDF MRF373A/D MRF373ALR1 MRF373ALSR1 MRF373ALR1 MRF373A MRF373ALSR1 MRF373AS

    L1A marking

    Abstract: MRF373A
    Text: MRF373A Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A MRF373ALR1 MRF373ALSR1 L1A marking

    T491D106K010AT

    Abstract: MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 2, 3/2009 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377HR3 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 T491D106K010AT MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF377H Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3

    MRF377H

    Abstract: dvbt transmitter MRF377HR3 resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi
    Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 MRF377HR3 MRF377H dvbt transmitter resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi

    MRF377H

    Abstract: nippon capacitors J628 Nippon chemi
    Text: Freescale Semiconductor Technical Data MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 MRF377H nippon capacitors J628 Nippon chemi

    0805J

    Abstract: nippon capacitors J564 Nippon chemi
    Text: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 0805J nippon capacitors J564 Nippon chemi

    581 transistor motorola

    Abstract: nippon capacitors 2508051107Y0 dvbt transmitter 3A412 MRF377 MRF377R3 MRF377R5 J263
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377/D MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3 581 transistor motorola nippon capacitors 2508051107Y0 dvbt transmitter 3A412 MRF377R5 J263

    marking WB4

    Abstract: NIPPON CHEMI nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 MRF377H marking WB4 NIPPON CHEMI nippon capacitors

    mrf373al

    Abstract: Vj3640Y MRF373A
    Text: MRF373A Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A MRF373ALR1 MRF373ALSR1 mrf373al Vj3640Y

    MRF373A

    Abstract: MRF373ALR1 MRF373ALSR1 MRF373AS
    Text: Freescale Semiconductor Technical Data Document Number: MRF373A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A MRF373ALR1 MRF373ALSR1 MRF373ALR1 MRF373A MRF373ALSR1 MRF373AS