Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. Preliminary APE1533-HF-3 2MHz, 3A Synchronous Step Down Converter Description Features Two internal MOSFETs with typical Rds on The APE1533 is a synchronous step-down converter of 50mΩ for high efficiency at 3A loads with integrated MOSFETs. The current-mode PWM
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APE1533-HF-3
APE1533
200kHz
300kHz
400uA
APE1533
1533VN3
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k 815 MOSFET
Abstract: FH2164
Text: FH2164 RF Power MOSFET Transistor 8W, 30-90MHz, 12V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device Meets CECOM drawing A3012715 Designed for frequency hopping systems 30-90 MHz Lower capacitances for broadband operation
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FH2164
30-90MHz,
A3012715
k 815 MOSFET
FH2164
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SMG2302N
Abstract: MosFET k 815 MOSFET
Text: SMG2302N 3.4 A, 20 V, RDS ON 76 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to
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SMG2302N
SC-59
11-Feb-2011
SMG2302N
MosFET
k 815 MOSFET
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rY-216
Abstract: td1410 ms 7254 ver 1.1 intel 815 intel schematics B56 smd transistor 82801AB AP-585 PGA370 PGA370 pinout
Text: R Intel 815 Chipset Platform Design Guide June 2000 Document Reference Number: 298233-001 Intel® 815 Chipset Platform R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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ar8-050-SL-A-G
rY-216
td1410
ms 7254 ver 1.1
intel 815
intel schematics
B56 smd transistor
82801AB
AP-585
PGA370
PGA370 pinout
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pin configuration NPN transistor c458
Abstract: NPN C458 10-25 L w7 Tantalum Capacitor smd serial number of internet manager intel Chipset CRB Schematics intel fw 82815 741G08 PC MOTHERBOARD intel 815 circuit diagram Transistor Q2N3904 NPN C460
Text: R Intel 815 Chipset Platform For Use with Universal Socket 370 Design Guide April 2001 Document Number: 298349-001 R ® Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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PH1225A
Abstract: PH1225AL
Text: PH1225AL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 14 October 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is for computing use only
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PH1225AL
PH1225AL
PH1225A
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047N08P
Abstract: 047N08
Text: SEMICONDUCTOR KU047N08P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,
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KU047N08P
Fig14.
Fig15.
Fig16.
047N08P
047N08
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LF2810A
Abstract: lf2810
Text: LF2810A RF Power MOSFET Transistor 10W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration
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LF2810A
500-1000MHz,
LF2810A
lf2810
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07 j330
Abstract: LF2802A J120 MOSFET transistor rf J330 k 815 MOSFET
Text: LF2802A RF Power MOSFET Transistor 2W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration
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LF2802A
500-1000MHz,
07 j330
LF2802A
J120 MOSFET
transistor rf
J330
k 815 MOSFET
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Untitled
Abstract: No abstract text available
Text: LF2805A RF Power MOSFET Transistor 5W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration
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LF2805A
500-1000MHz,
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UF2815B
Abstract: k 815 MOSFET
Text: UF2815B RF Power MOSFET Transistor 15W, 100-500 MHz, 28V M/A-COM Products Released - Ver 08.07 Package Outline Features • • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration
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UF2815B
UF2815B
k 815 MOSFET
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LF2805A
Abstract: J286
Text: LF2805A RF Power MOSFET Transistor 5W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration
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LF2805A
500-1000MHz,
LF2805A
J286
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Untitled
Abstract: No abstract text available
Text: LF2802A RF Power MOSFET Transistor 2W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration
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LF2802A
500-1000MHz,
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PSMN1R2
Abstract: PSMN1R2-25YL
Text: PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN1R2-25YL
PSMN1R2-25YL
PSMN1R2
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KY 719
Abstract: 122JK TB163TK TB143TK
Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75
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2SK1973F5
2SK2041
2SK2042
2SK2094F5
2SK2103
2SA1036K
2SA1037AK
2SA1037AKLN
2SA1455K
RU101
KY 719
122JK
TB163TK
TB143TK
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L0025
Abstract: LF2802A f10 transistor
Text: A títcor. W an AMP company RF MOSFETPower Transistor, 2W, 28V 500-1000 MHz LF2802A V2.00 Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor
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LF2802A
L0025
LF2802A
f10 transistor
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MOSFET 818 ln
Abstract: No abstract text available
Text: LN D 1 E incN-Channel Depletion-Mode MOSFET Ordering Information B Vdsx / Order Number / Package f*DS OH '□(ON) b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£2 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89 Features Advanced DMOS Technology 7! ESD gate protection
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LND150N3
O-243AA*
LND150N8
LND150ND
OT-89
MOSFET 818 ln
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WN 1461
Abstract: No abstract text available
Text: ytâMOü w an A M P com pany RF MOSFETPower Transistor, 2W, 28V 500 -1000 MHz - A - Features • • • • • • LF2802A - B - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration
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LF2802A
WN 1461
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BAT 545
Abstract: No abstract text available
Text: APT8067HVR • R A d va n ce d W/Æ PO W ER Te c h n o l o g y 800V 11.5A 0.67Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8067HVR
O-258
IL-STD-750
BAT 545
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transistor t2a
Abstract: U 318 m t2a transistor UF2820P
Text: M an A M P com pany RF MOSFET Power Transistor, 20W, 28V 100 -500 MHz UF2820P V2.00 Features • • • • • N-Channel Enhancem ent Mode Device DMOS Structure I.ower Capacitances for Broadband O peration Com m on Source C onfiguration Lower Noise Floor
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UF2820P
transistor t2a
U 318 m
t2a transistor
UF2820P
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P channel MOSFET 10A schematic
Abstract: PN channel MOSFET 10A OM20P10ST OM9326SC pch 1275
Text: OM9326SC DUAL MOSFETS IN 5 PIN HERMETIC SIP PACKAGE, N & P CHANNEL Complementary 100V N-Channel And P-Channel Power MOSFETs In 5 Pin Hermetic SIP Package FEATURES • LOW RoS on • • • • Fast Switching Easy To Heat Sink Small Isolated Hermetic Package
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OM9326SC
MIL-S-19500,
OM20P10ST.
P channel MOSFET 10A schematic
PN channel MOSFET 10A
OM20P10ST
OM9326SC
pch 1275
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Untitled
Abstract: No abstract text available
Text: APT1001R1HVR ADVANCED POW ER Te c h n o l o g y 1000V 9A 1.1000 POWER MOSV Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT1001R1HVR
O-258
APT1001R1HVR
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irfip350
Abstract: No abstract text available
Text: 4055452 International k ?r Rectifier INR t4T PD-9.749 IRFIP350 INTER NAT IONAL RECTIFIER b5E D HEXFET Power MOSFET • • • • • • • 0015334 Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm
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IRFIP350
O-247
irfip350
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ed 76a
Abstract: IRFS9240 IRFS9241
Text: P-CHANNEL POWER MOSFETS IRFS9240/9241 FEATURES • Lower Rdswnq • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFS9240/9241
IRFS9240
-200V
IRFS9241
-150V
ed 76a
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