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    K 4014 TRANSISTOR Search Results

    K 4014 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    K 4014 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 3GE P • 7^537 Q031SQ3 0 ■ 'T'-'ZS- 1 S C S -T H O M S O N ^ r a @ i p O T o ) 3D(gi 2 N 4014 S G S-THOMSON HIGH-VOLTAGE, HIGH CURRENT SWITCH DESC RIPTIO N The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current


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    Q031SQ3 2N4014 7T2TS37 DQ31SQb PDF

    2SA1626

    Abstract: K 4014 transistor pw 4014
    Text: DATA SHEET NEC PNP SILICON TRANSISTOR ELECTRON DEVICE 2SA1626 * D E S C R IP T IO N The 2S A 1 6 2 6 is designed fo r general purpose am plifier and high speed switching applications. P A C K A G E D IM E N S IO N S in millimeters FEATURES • High Voltage.


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    2SA1626 2SA1626 10--Collector 1988M K 4014 transistor pw 4014 PDF

    transistor k 4110

    Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
    Text: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­


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    i-noa36Â osit34Â 354G-01 transistor k 4110 K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13 PDF

    kec kta

    Abstract: 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068
    Text: 0 TV TRANSISTOR ELECTRICAL CHARACTERISTICS Ta = 25 C MAXIMUM RATINGS USE TYPE VCEO (V) lC (mA) VCE (sat) MAX hFE TJ ICBO (mW) <°C) ( m A) VCB (V) PC [E (mA) VCE (V) ic (mA) (V) C o b ,* Crc Typ (MIN) h (MHz) VCE (V) 1c (mA) - (400) 10 4 Ic (mA) Iß (mA)


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    382/KTN 383/KTN 88A/KTN 2229/KTN O-92A) KTC90U KTC9013 kec kta 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068 PDF

    MHQ2222

    Abstract: MHQ3467 MHQ2907 M 2530 motorola MHQ6001 MPQ2369 MPQ2907 MPQ3467 MPQ3725A MPQ6001
    Text: Multiple Devices S M A L L - S IG N A L M U L T IP L E T R A N S IS T O R S A N D D A R L IN G T O N T R A N S IS T O R S The trend in electronic system design is toward the use of integrated circuits — to reduce component cost, assembly cost, and equipment cost. But ICs still aren't all things to all people, and for those circuit designs


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    MPQ2369 MPQ2907 MPQ3467 mpq3725 MPQ3725A MPQ6001 mpq6002 MPQ68421 MHQ2222 MHQ3467 MHQ2907 M 2530 motorola MHQ6001 PDF

    TA1N

    Abstract: 2n4014
    Text: TYPES 2N4013, 2N4014 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 7 , M A R C H 1973 FAST, H IG H -V O LT A G E , H IG H -C U R R E N T CORE D R IV E R S • hpE Guaranteed from 10 mA to 1 A • Guaranteed Switching Times at 500 mA •


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    2N4013, 2N4014 2N4013 TA1N PDF

    3D24N

    Abstract: 618 diode gd 4016 transistor kp 455-A6 radio fernsehen elektronik service-mitteilungen ZF-filter robotron 1PK0
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N .SKPTTCMRRP I radio - television | 1981 9 SEITE 1-4 Auf Wunsch zahlreicher Servicewerkstätten veröffentlichen wir nach­ folgend nochmals die von uns anzuwendenden


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    MCM6830

    Abstract: MPQ6842 MCM6832L 200 watts audio amp power transistors circuit diagram power transistor audio amplifier 500 watts circuit diagram MCM6830A MHQ2907 MHQ3467 MHQ6002 Common collector 8 bit darlington
    Text: Multiple Devices S M A L L - S IG N A L M U L T I P L E T R A N S I S T O R S A N D D A R L IN G T O N T R A N S I S T O R S The trend in electronic system design is toward the use of integrated circuits — to reduce com ponent cost, assembly cost, and equipment cost. But ICs still aren't all things to all people, and fo r those circuit designs


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    MPQ6842 MPQ6842 MCM6830 MCM6832L 200 watts audio amp power transistors circuit diagram power transistor audio amplifier 500 watts circuit diagram MCM6830A MHQ2907 MHQ3467 MHQ6002 Common collector 8 bit darlington PDF

    TRM401

    Abstract: BC140C ST6512 181T2 mt102 MD14 7G13 ST7200 81T2 A298
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    NPN110. USA55191/33 15On0 50MSA USA55191/34 50MSA 2N6135 MT102 2SC118 2SC119 TRM401 BC140C ST6512 181T2 MD14 7G13 ST7200 81T2 A298 PDF

    J06A

    Abstract: E20A LM6161 LM6261N LM6361J LM6361N W10A
    Text: LM6161/LM6261/LM6361 National Semiconductor LM6161 /LM6261/LM6361 High Speed Operational Amplifier General Description Features The LM6161 family of high-speed amplifiers exhibits an ex­ cellent speed-power product in delivering 300 V / jas and 50 MHz unity gain stability with only 5 mA of supply current.


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    LM6161 /LM6261/LM6361 150pF* 10kfi tl/h/9057-10 J06A E20A LM6261N LM6361J LM6361N W10A PDF

    Untitled

    Abstract: No abstract text available
    Text: HS-2620RH, HS-2622RH Semiconductor Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers August 1995 Description Features • High Input Impedance HS-2620R . 65M il (Min) • High Gain (HS-2620RH) 100kV/V (M in). 150kV/V (Typ)


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    HS-2620RH, HS-2622RH HS-2620R) HS-2620RH) 100kV/V 150kV/V HS-2620RH 100MHz PDF

    NKT 275 transistor

    Abstract: 2N6135 MD14 package
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    2SC118

    Abstract: MD14 package ST7200 81T2 A249 A298 MT1070 2SC100 2n6135 usaf522es067m
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    NPN110. T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 2SC118 MD14 package ST7200 81T2 A249 A298 MT1070 2n6135 usaf522es067m PDF

    Untitled

    Abstract: No abstract text available
    Text: ÎS Î H A R R HS-2620RH, HS-2622RH I S S E M I C O N D U C T O R Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers August 1995 Features Description • High Input Impedance HS-2620R . 65M& (Min) HS-2620RH and HS-2622RH are radiation hardened bipolar


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    HS-2620RH, HS-2622RH HS-2620R HS-2620RH HS-2622RH HS-2620RH) HS-2620RH: PDF

    74LS82

    Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
    Text: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte­ grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p­


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    DAC8043A

    Abstract: r2r 10k ladder network DAC8043 DAC8043A1ES DAC8043A1FS DAC8043AEP DAC8043AES DAC8043AFP DAC8043AFRU OP42
    Text: a 12-Bit Serial Input Multiplying D/A Converter DAC8043A FUNCTIONAL BLOCK DIAGRAM FEATURES Compact SO-8 and TSSOP Packages True 12-Bit Accuracy 5 V Operation @ <10 ␮A Fast 3-Wire Serial Input Fast 1 ␮s Settling Time 2.4 MHz 4-Quadrant Multiply BW Pin-for-Pin Upgrade for DAC8043


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    12-Bit DAC8043A DAC8043 DAC8043A r2r 10k ladder network DAC8043 DAC8043A1ES DAC8043A1FS DAC8043AEP DAC8043AES DAC8043AFP DAC8043AFRU OP42 PDF

    DAC8043A

    Abstract: analog Branding Package DAC8043 DAC8043A1ES DAC8043AEP DAC8043AES DAC8043AFP DAC8043AFRU DAC8043AFS OP42
    Text: a 12-Bit Serial Input Multiplying D/A Converter DAC8043A FUNCTIONAL BLOCK DIAGRAM FEATURES Compact SO-8 and TSSOP Packages True 12-Bit Accuracy +5 V Operation @ <10 ␮A Fast 3-Wire Serial Input Fast 1 ␮s Settling Time 2.4 MHz 4-Quadrant Multiply BW Pin-for-Pin Upgrade for DAC8043


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    12-Bit DAC8043A DAC8043 DAC8043A analog Branding Package DAC8043 DAC8043A1ES DAC8043AEP DAC8043AES DAC8043AFP DAC8043AFRU DAC8043AFS OP42 PDF

    8043af

    Abstract: DAC8043A
    Text: A N A LO G ► D EVICES 12-Bit Serial Input Multiplying D/A Converter DAC8043A FEA T U R ES Com pact SO-8 and T S S O P Packages True 12-Bit A ccuracy +5 V Operation @ < 10 julA Fast 3-Wire Serial Input Fast 1 |xs Settling Tim e 2.4 MHz 4-Quadrant Multiply BW


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    12-Bit DAC8043A DAC8043 C8043A 8043af DAC8043A PDF

    SGS-ATES l120

    Abstract: National Semiconductor 4045 transistor bf 175 TAA611
    Text: PROFESSIONAL SEMICONDUCTOR INTRODUCTION This databook contains data sheets on the SGS-ATES range of linear, MOS and COS/MOS integrated circuits intended for professional applications. The information on each product has been specially presented in order that the


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    ic 74226

    Abstract: jk flip flop 74103 ic D flip flop 7474 7471 rs flip flop 4011 flip flop IC 7400 SERIES list Ic ttl 7490, 7493, 7495 ci 74386 7414 NOT gate ic IC LA 74141
    Text: 1SE D RICOH CORP/ ELECTRONIC 7 7 4 4bTO 0G0Q7Qt, b RICOH No. 84-01 4-1-1984 Microelectronic Specification T -tfZ -3 1 RP3G01 0 2 • A N A L O G /D IG IT A L B I- C M O S GATE ARRAYS EFFICIENCY GENERAL DESCRIPTIO N T h e R P 3 G 01 and R P 3 G 0 2 a r e A n a lo g /D ig ita l


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    RP3G01 RP3G01 ic 74226 jk flip flop 74103 ic D flip flop 7474 7471 rs flip flop 4011 flip flop IC 7400 SERIES list Ic ttl 7490, 7493, 7495 ci 74386 7414 NOT gate ic IC LA 74141 PDF

    BEL1895

    Abstract: AD5441 DAC8043 DAC8043A MO-187-AA OP42
    Text: 12-Bit Serial Input Multiplying DAC AD5441 Preliminary Technical Data FEATURES FUNCTIONAL BLOCK DIAGRAM 3 V to 5 V supply operation True 12-bit accuracy 5 V operation @ <10 A Fast 3-wire serial input Fast 1 μs settling time 2.4 MHz, 4-quadrant multiply BW


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    12-Bit AD5441 DAC8043 DAC8043A MO-187-AA BEL1895 AD5441 DAC8043A MO-187-AA OP42 PDF

    FZH115B

    Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
    Text: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P


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    74INTEGRATED Line-to-10 150ns 16-DIL 150ns 18-pin 250ns 300ns FZH115B fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104 PDF

    74ls82

    Abstract: 74245 BIDIRECTIONAL BUFFER IC 74ls150 ph 4531 diode 4583 dual schmitt trigger ic D flip flop 7474 74245 BUFFER IC ic 7483 BCD adder data sheet ic 74139 Quad 2 input nand gate cd 4093
    Text: General Features The SCxD4 series of high perform ance CM O S gate arrays offers the user the ability to realise custom ised VLSI inte­ grated circuits featuring the speed perform ance previously obtainable only with bipo lar tech nolog ies whilst retaining all


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    1 bit full adder with carry

    Abstract: 1-Bit full adder 1d1200a RS flip flop cmos
    Text: MATRA MbE D M H S ES SfiböMSb Q Q Q Q S Ô 7 b SMMHS 'T - r X - MAY 1988 PRELIMINARY DATA SHEET OPEN ASIC MA GATE ARRAY SERIES - 3 M/ l METAL LAYER MA 0250 - MA 0400 - M A 0800 - M A 1200 H ATURSS • HIGH SPEED CMOS: 2 NS/GATE TYPICAL PROPAGATION DELAY • LOW CONSUMPTION:


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    MIL883B 1 bit full adder with carry 1-Bit full adder 1d1200a RS flip flop cmos PDF