C5-K3L
Abstract: 2R2 choke 476 25k 222
Text: MITSUMI Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters OUTLINE High efficiency low DCR choke coil for batterydriven portable electronic equipment power supplies (DC-DC compander, switching power supply) and other electronic equipment.
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C10-K
C12-K
C13-K
C10-K
C12-K
C13-K
C5-K3L
2R2 choke
476 25k 222
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Untitled
Abstract: No abstract text available
Text: MITSUMI Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters OUTLINE High efficiency low DCR choke coil for batterydriven portable electronic equipment power supplies (DC-DC compander, switching power supply) and other electronic equipment.
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C10-K
C12-K
C13-K
C10-K
C12-K
C13-K
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C4-K2.5L
Abstract: No abstract text available
Text: MITSUMI Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters OUTLINE High efficiency low DCR choke coil for batterydriven portable electronic equipment power supplies (DC-DC converter, switching power supply) and other electronic equipment.
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C10-K
C12-K
C13-K
C10-K
C12-K
C13-K
C4-K2.5L
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10K47
Abstract: k3528 6R25
Text: NTC Thermistors for temperature sensing Accuracy line Surface mount Series 2322 . . 640 0 . 640 6. 640 5. 615 1. 615 2. Resistance at 25 °C R25 = 470 Ω to 470 kΩ R25 = 3.3 Ω to 470 kΩ R25 = 2.7 kΩ, 4.7 kΩ, 10 kΩ, 47 kΩ,
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R/R25
B25/85
10K47
k3528
6R25
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C3-K
Abstract: No abstract text available
Text: MITSUMI パワーインダクタ Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters 概要／OUTLINE 電池駆動の携帯型電子機器の電源（DC-DCコンバ ータ・スイッチング電源） その他電子機器用の高効
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476 25k 040
Abstract: c5-k3la C5-K2.5L 476 25k 222 mitsumi inductors C6-K3L mitsumi coils
Text: MITSUMI パワーインダクタ Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters 概要／OUTLINE 電池駆動の携帯型電子機器の電源（DC-DCコンバ ータ・スイッチング電源） その他電子機器用の高効
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C10-K
Abstract: No abstract text available
Text: MITSUMI パワーインダクタ Power Inductors C3-K,C4-K,C5-K,C6-K,C8-K,C10-K,C12-K,C13-K Series Coils, Filters 概要／OUTLINE 電池駆動の携帯型電子機器の電源（DC-DCコンバ ータ・スイッチング電源） その他電子機器用の高効
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Untitled
Abstract: No abstract text available
Text: CY14B108K CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16 (CY14B108M)
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CY14B108K
CY14B108M
CY14B108K)
CY14B108M)
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CY7C09099V
Abstract: No abstract text available
Text: CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09089V/99V CY7C09179V/99V 3.3 V 32 K/64 K/128 K x 8/9 Synchronous Dual-Port Static RAM 3.3 V 32 K/64 K/128 K × 8/9 Synchronous Dual-Port Static RAM Features • High speed clock to data access 6.5[1]/7.5[1]/9/12 ns max.
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CY7C09079V/89V/99V
CY7C09179V/89V/99V
CY7C09089V/99V
CY7C09179V/99V
K/128
100-pin
CY7C09099V
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PDF
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Untitled
Abstract: No abstract text available
Text: CY14B108K, CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16 (CY14B108M)
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CY14B108K,
CY14B108M
54-pin
CY14B108K)
CY14B108M)
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CY7C09099V
Abstract: No abstract text available
Text: CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09089V/99V CY7C09179V/99V 3.3 V 32 K/64 K/128 K x 8/9 Synchronous Dual-Port Static RAM 3.3 V 32 K/64 K/128 K × 8/9 Synchronous Dual-Port Static RAM Features • High speed clock to data access 6.5[1]/7.5[1]/9/12 ns max.
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CY7C09079V/89V/99V
CY7C09179V/89V/99V
CY7C09089V/99V
CY7C09179V/99V
K/128
CY7C09179V)
CY7C09089V)
CY7C09099V
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PDF
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CY7C09099V
Abstract: No abstract text available
Text: CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09089V/99V CY7C09179V/99V 3.3 V 32 K/64 K/128 K x 8/9 Synchronous Dual-Port Static RAM 3.3 V 32 K/64 K/128 K × 8/9 Synchronous Dual-Port Static RAM Features • High speed clock to data access 6.5[1]/7.5[1]/9/12 ns max.
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CY7C09079V/89V/99V
CY7C09179V/89V/99V
CY7C09089V/99V
CY7C09179V/99V
K/128
100-pin
CY7C09099V
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PDF
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Untitled
Abstract: No abstract text available
Text: CY14B108K CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16 (CY14B108M)
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CY14B108K
CY14B108M
CY14B108K)
CY14B108M)
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PDF
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Untitled
Abstract: No abstract text available
Text: CY14B108K, CY14B108M 8-Mbit 1024 K x 8/512 K × 16 nvSRAM with Real Time Clock 8-Mbit (1024 K × 8/512 K × 16) nvSRAM with Real Time Clock Features • Watchdog timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 1024 K × 8 (CY14B108K) or 512 K × 16
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CY14B108K,
CY14B108M
CY14B108K)
CY14B108M)
54-pin
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ecc88
Abstract: 6922 triode E88CC 6922 e88cc jj WG1R triode 6922 trio 33 uF 400 V 6922/E88CC
Text: ECC88 - 6922 E88CC R. F. DOUBLE TRIODE Base: NOVAL Uf If Dimension and connections: = 6,3 V = 365 mA Typical characteristic: Ua = 90 V Ug = -1,3 V Ia = 15 mA S = 12,5 mA/V Ri = 2,6 kΩ µ = 33 Limiting Ua0 Ua la=0 Ua Ua(War<0,8 W) PaR Wg1R Ik Ug Rg U+k/fU-k/f+
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ECC88
E88CC
6922 triode
E88CC
6922
e88cc jj
WG1R
triode 6922
trio
33 uF 400 V
6922/E88CC
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Untitled
Abstract: No abstract text available
Text: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features • Industry standard configurations ❐ Single 3 V +20%, –10% operation ❐ Industrial temperature ■ Packages
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CY14B101KA
CY14B101MA
CY14B101KA)
CY14B101MA)
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PDF
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Untitled
Abstract: No abstract text available
Text: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features • Industry standard configurations ❐ Single 3 V +20%, –10% operation ❐ Industrial temperature ■ Packages
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CY14B101KA
CY14B101MA
44-/54-pin
48-pin
CY14B101KA)
CY14B101MA)
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PDF
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MAC12SM
Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
Text: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA
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O-226AA)
2N5060
2N5061
2N5062
2N5064
MCR100-3
MCR100-4
MCR100-6
MCR100-8
OT-223
MAC12SM
MCR100-8 thyristor
C106M
MAC12N
Mcr22-8 301
maC97A8
MCR106-6
MAC22
mac97
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PDF
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Untitled
Abstract: No abstract text available
Text: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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CY14B108L
CY14B108N
CY14B108L)
CY14B108N)
44-/54-pin
48-ball
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PDF
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Untitled
Abstract: No abstract text available
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
CY14B101LA)
CY14B101NA)
32-pin
44-/54-pin
48-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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Original
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CY14B108L
CY14B108N
44-/54-pin
48-ball
CY14B108L)
CY14B108N)
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PDF
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Untitled
Abstract: No abstract text available
Text: MS91189- SERIES 2890 PHENOLIC CORE LT4K R F IN D U C T O R S 2 8 9 0 -0 0 K 2 8 9 0 -0 2 K 2 8 9 0 -0 3 K 2 8 9 0 -0 4 K 2 8 9 0 -0 6 K 2 8 9 0 -0 8 K 2 8 9 0 -1 0 K 2 8 9 0 -1 2 K 2 8 9 0 -1 4 K 2 8 9 0 -1 6 K 2 8 9 0 -1 8 K 2 8 9 0 -2 0 K 2 8 9 0 -2 2 K
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OCR Scan
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MS91189-
LT10K
LT10K
MS91189
MS75103
LT10K)
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PDF
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Untitled
Abstract: No abstract text available
Text: DASH NO. U CODE MADE FROM GSD REVISIONS CHANGES o Cm ER 36252 ME 04/27/95 CN 36541 I ME C 08/31/95 KD CN 37799 E I TML 03/09/99 CO NOTES: 1. FOR USE WITH RG -5 9, 62 k 210/U CABLE. 2. FOR CABLING INSTRUCTIONS SEE C P -4 4 1. 3. FOR CABLE TRIMMING USE K T J-7 2 k K TD-134.
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OCR Scan
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210/U
TD-134.
KTH-2062.
IL-STD-348,
-B-19
ASTM-B16
MIL-G-45204
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PDF
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TSOJ-54
Abstract: IBM0364404CT3A-370 2798j
Text: IBM0364404C IBM0364164C IBM0364804C IBM03644B4C 64Mb Synchronous DRAM - Die Revision A Features • Programmable Wrap Sequence: Sequential or Interleave • High Performance: -360, CL=3 fc K ! C lo c k F r e q u e n c y tc K I C lo c k C y c le tA C I C l o c k A c c e s s T i m e 1
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OCR Scan
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A12/A13
IBM0364404C,
IBM0364804C,
IBM0364164C
TSOJ-54
IBM0364404CT3A-370
2798j
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PDF
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