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    K 3569 7.V EQUIVALENT Search Results

    K 3569 7.V EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    K 3569 7.V EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LTC3544

    Abstract: No abstract text available
    Text: LTC3569 Triple Buck Regulator with 1.2A and Two 600mA Outputs and Individual Programmable References Description Features Three Independent Current Mode Buck DC/DC Regulators 1.2A and 2 x 600mA n Single Pin Programmable V FB Servo Voltages from 800mV Down to 425mV (in 25mV Steps)


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    LTC3569 600mA 600mA) 800mV 425mV 25MHz MS10E, DFN-10 LTC3561 LTC3544 PDF

    mrf182

    Abstract: MRF182R1 MRF182SR1 945 mosfet NI-360
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182R1 MRF182SR1 N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device


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    MRF182/D MRF182R1 MRF182SR1 MRF182R1 mrf182 MRF182SR1 945 mosfet NI-360 PDF

    MHW1244

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and


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    MHW1244/D MHW1244 MHW1244/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and


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    MHW1244/D MHW1244 MHW1244/D PDF

    MHW1224

    Abstract: CTB22
    Text: Freescale Semiconductor, Inc. Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor, Inc. The RF Line MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion


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    MHW1224/D MHW1224 MHW1224 CTB22 PDF

    MHW1244

    Abstract: XMD26
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 CATV Amplifier Module Features • • • • Specified for 12–, 22– and 26–Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature


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    MHW1244/D MHW1244 MHW1244 XMD26 PDF

    MHW1224

    Abstract: XM26
    Text: MOTOROLA Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and


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    MHW1224/D MHW1224 MHW1224 XM26 PDF

    MHW1244

    Abstract: DEVICE T76
    Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 CATV Amplifier Module Features • • • • Specified for 12–, 22– and 26–Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature


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    MHW1244/D MHW1244 MHW1244 DEVICE T76 PDF

    MRF1090MA

    Abstract: microwave transistor
    Text: MOTOROLA Order this document by MRF1090MA/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistor MRF1090MA Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc


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    MRF1090MA/D MRF1090MA MRF1090MA microwave transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor, Inc. The RF Line MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion


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    MHW1224/D MHW1224 MHW1224/D PDF

    mrf3163

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF316/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor MRF316 . . . designed primarily for wideband large–signal output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


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    MRF316/D MRF316 MRF316/D mrf3163 PDF

    SMD Transistor z6

    Abstract: 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS
    Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


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    MRF18090B/D MRF18090B MRF18090BS MRF18090B SMD Transistor z6 465B BC847 GSM1900 LP2951 MRF18090BS PDF

    MRF373A

    Abstract: MRF373ALSR1 MRF373AR1 MRF373AS 845MHz
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


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    MRF373A/D MRF373AR1 MRF373ALSR1 MRF373A MRF373ALSR1 MRF373AS 845MHz PDF

    j117 motorola

    Abstract: motorola j117
    Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station


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    MRF281/D MRF281SR1 MRF281ZR1 MRF281/D j117 motorola motorola j117 PDF

    smd wb1

    Abstract: smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090A MRF18090AS
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


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    MRF18090A/D MRF18090A MRF18090AS MRF18090A smd wb1 smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090AS PDF

    MRF373A

    Abstract: MRF373AR1 MRF373AS MRF373ASR1
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


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    MRF373A/D MRF373AR1 MRF373ASR1 MRF373A MRF373AS MRF373ASR1 PDF

    mosfet 4496

    Abstract: MRF281ZR1 741 datasheet motorola MRF281SR1 motorola 947 rf power 4496 mosfet motorola j117 MRF281Z
    Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station


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    MRF281/D MRF281SR1 MRF281ZR1 MRF281SR1 mosfet 4496 MRF281ZR1 741 datasheet motorola motorola 947 rf power 4496 mosfet motorola j117 MRF281Z PDF

    MC14467

    Abstract: Motorola Smoke Detector MC14467P1 piezoelectric transducer for sound MC14467-1 ionization sensor
    Text: MOTOROLA Order this document by MC14467–1/D SEMICONDUCTOR TECHNICAL DATA MC14467-1 Low–Power CMOS Ionization Smoke Detector IC The MC14467–1, when used with an ionization chamber and a small number of external components, will detect smoke. When smoke is sensed, an alarm is sounded


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    MC14467 MC14467-1 UL217 UL268 MC14467P1 Motorola Smoke Detector piezoelectric transducer for sound MC14467-1 ionization sensor PDF

    piezoelectric transducer for sound

    Abstract: MC145017P MC145017 circuit for piezoelectric sensor
    Text: MOTOROLA Order this document by MC145017/D SEMICONDUCTOR TECHNICAL DATA MC145017 Low–Power CMOS Ionization Smoke Detector IC with Temporal Pattern Horn Driver 16 1 The MC145017, when used with an ionization chamber and a small number of external components, will detect smoke. When smoke is sensed, an alarm is sounded


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    MC145017/D MC145017 MC145017, UL217 UL268 MC145017P piezoelectric transducer for sound MC145017 circuit for piezoelectric sensor PDF

    MRF373A

    Abstract: MRF373 MRF373AS VJ3640Y225KXBAT chip capacitor vishay
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


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    MRF373A/D MRF373A MRF373AS MRF373 MRF373AS VJ3640Y225KXBAT chip capacitor vishay PDF

    H6050

    Abstract: Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805
    Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


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    MRF18090B/D MRF18090B MRF18090BS H6050 Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805 PDF

    smd transistor wb1

    Abstract: wb1 sot package sot-23
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


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    MRF18090A/D MRF18090A MRF18090AS smd transistor wb1 wb1 sot package sot-23 PDF

    Smoke Sensor circuit

    Abstract: piezoelectric transducer for sound smoke sensor MC145017 MC145017P
    Text: MOTOROLA Order this document by MC145017/D SEMICONDUCTOR TECHNICAL DATA Low–Power CMOS Ionization Smoke Detector IC with Temporal Pattern Horn Driver MC145017 The MC145017, when used with an ionization chamber and a small number of external components, will detect smoke. When smoke is sensed, an alarm is sounded


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    MC145017/D MC145017 MC145017, UL217 UL268 Smoke Sensor circuit piezoelectric transducer for sound smoke sensor MC145017 MC145017P PDF

    Untitled

    Abstract: No abstract text available
    Text: 16 15 14 13 12 11 $ 10 a A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M DWG STATUS MISSING SYMBOLS SYMBOL DEFINITION TOTAL NO OF INSPECTIONS REQUIRED LAST NO. USED


    OCR Scan
    17JL06 26FE07 19AP07 PDF