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    K 2604 Search Results

    K 2604 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MSD1260-473MLD Coilcraft Inc General Purpose Inductor, 47uH, 20%, 2 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc
    MSS1260-472MLB Coilcraft Inc General Purpose Inductor, 4.7uH, 20%, 1 Element, Ferrite-Core, SMD, 4848, ROHS COMPLIANT Visit Coilcraft Inc
    MSD1260-473MLB Coilcraft Inc General Purpose Inductor, 47uH, 20%, 2 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc
    MLC1260-401MLB Coilcraft Inc General Purpose Inductor, 0.4uH, 20%, 1 Element, Iron-Core, SMD, 4541, CHIP, 4541, ROHS COMPLIANT Visit Coilcraft Inc
    MSD1260-474KLB Coilcraft Inc General Purpose Inductor, 470uH, 10%, 2 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc
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    K 2604 Price and Stock

    Vishay Intertechnologies CRCW0402604KFKEDC

    Thick Film Resistors - SMD 1/16watt 604Kohms 1% Commercial Use
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CRCW0402604KFKEDC 72,366
    • 1 $0.1
    • 10 $0.017
    • 100 $0.008
    • 1000 $0.005
    • 10000 $0.004
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    Vishay Intertechnologies CRCW0402604RFKEDHP

    Thick Film Resistors - SMD CRCW0402-HP 100 604R 1% ET7 E3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CRCW0402604RFKEDHP 23,979
    • 1 $0.13
    • 10 $0.044
    • 100 $0.027
    • 1000 $0.021
    • 10000 $0.012
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    Vishay Intertechnologies CRCW0402604KFKED

    Thick Film Resistors - SMD 1/16watt 604Kohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CRCW0402604KFKED 14,401
    • 1 $0.1
    • 10 $0.016
    • 100 $0.01
    • 1000 $0.008
    • 10000 $0.005
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    Vishay Intertechnologies CRCW0402604RFKED

    Thick Film Resistors - SMD 1/16watt 604ohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CRCW0402604RFKED 7,534
    • 1 $0.1
    • 10 $0.017
    • 100 $0.01
    • 1000 $0.008
    • 10000 $0.003
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    Vishay Intertechnologies CRCW2512604RFKEG

    Thick Film Resistors - SMD 1watt 604ohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CRCW2512604RFKEG 5,078
    • 1 $0.33
    • 10 $0.122
    • 100 $0.072
    • 1000 $0.068
    • 10000 $0.043
    		Buy Now
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    K 2604 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    srx 2039

    Abstract: BASE200 NT8GC72C4NG0NL
    Text: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die


    Original     		PDF NT2GC72B89G0NL /NT2GC72C89G0NL NT4GC72B4PG0NL /NT4GC72C4PG0NL /NT4GC72B8PG0NL /NT4GC72C8PG0NL NT8GC72B4NG0NL /NT8GC72C4NG0NL PC3-10600 DDR3-1333/1600 srx 2039 BASE200 NT8GC72C4NG0NL

    srx 2039

    Abstract: No abstract text available
    Text: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die


    Original     		PDF NT2GC72B89G0NL /NT2GC72C89G0NL NT4GC72B4PG0NL /NT4GC72C4PG0NL /NT4GC72B8PG0NL /NT4GC72C8PG0NL NT8GC72B4NG0NL /NT8GC72C4NG0NL PC3-10600 DDR3-1333/1600 srx 2039

    srx 2039

    Abstract: JESD79-3E NT8GC72C4NG0NL
    Text: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 / PC3-14900 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600/1866 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die


    Original     		PDF NT2GC72B89G0NL /NT2GC72C89G0NL NT4GC72B4PG0NL /NT4GC72C4PG0NL /NT4GC72B8PG0NL /NT4GC72C8PG0NL NT8GC72B4NG0NL /NT8GC72C4NG0NL PC3-10600 PC3-14900 srx 2039 JESD79-3E NT8GC72C4NG0NL

    S0854HN

    Abstract: TK68HC811E2 TK68HC711E9 stk 407 070 k 942 TK68HC811
    Text: TK68HC11ETK68H C11ETK68HC11ET 8HC11KTK68HC11 C11ETEKMOSTK68 K68HC11ETK68HC 1ETK68HC11ETK6 C11KTK68HC11ET TK68HC11ETK68H TK68HC11E Family Technical Data Te k m o s Your Trusted Manufacturer for Semiconductors TK68HC11E Te k m o s Your Trusted Manufacturer for Semiconductors


    Original     		PDF TK68HC11ETK68H C11ETK68HC11ET 8HC11KTK68HC11 C11ETEKMOSTK68 K68HC11ETK68HC 1ETK68HC11ETK6 C11KTK68HC11ET TK68HC11ETK68H TK68HC11E TK68HC11E S0854HN TK68HC811E2 TK68HC711E9 stk 407 070 k 942 TK68HC811

    rs 5493 data sheet

    Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. rs 5493 data sheet transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026

    5252 F 0911

    Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor

    5252 F 0918

    Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS C-0100. 5252 F 0918 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003

    5252 F 0911

    Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917

    5252 F 0911

    Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
    Text: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original     		PDF MIL-C-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003

    2607 bussmann

    Abstract: k 2608 k 2607 bussmann class J fuses 2611 E14853
    Text: Bussmann Fuseblocks, Holders and Disconnect Switches Class H K , J and R Fuseblocks Porcelain Type Fuseblocks Modular Type Fuseblocks Class H(K) and R Dimensions Agency Approvals: UL Listed Class H & J Fuses Reinforced retaining clips standard Available in 30A and 60A, 3-pole models only.


    Original     		PDF E14853 0-1000V 5-1500V 11241-3SR 11241-3PR 11239-3SR 11239-3PR 2607 bussmann k 2608 k 2607 bussmann class J fuses 2611 E14853

    CY7C1012DV33-10BGXI

    Abstract: SRAM TTL
    Text: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately


    Original     		PDF CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16 I/O23. CY7C1012DV33-10BGXI SRAM TTL

    5252 F 0911

    Abstract: 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor
    Text: K E M E T TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE * C S R X X B 5 6 5 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A— Not Applicable


    Original     		PDF MIL-C-39003 Symbol185K035BS T256B825K035BS T256B106K035BS T256C336K035BS T256C396K035BS T256C476K035BS T256D566K035BS T256D686K035BS T256A125K050BS 5252 F 0911 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor

    Untitled

    Abstract: No abstract text available
    Text: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Functional Description Features The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects (CE1, CE2, and CE3).


    Original     		PDF CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16â I/O23.

    CY7C1024DV33

    Abstract: No abstract text available
    Text: CY7C1024DV33 3-Mbit 128 K x 24 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at f = 100 MHz The CY7C1024DV33 is a high performance CMOS static RAM organized as 128 K words by 24 bits. This device has an


    Original     		PDF CY7C1024DV33 CY7C1024DV33

    CY62137EV30

    Abstract: No abstract text available
    Text: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62137EV30 CY62137CV30 48-ball 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62137EV30 CY62137CV30 48-ball 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62137EV30 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A


    Original     		PDF CY62136EV30 CY62136CV30

    Untitled

    Abstract: No abstract text available
    Text: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62137EV30 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A


    Original     		PDF CY62136EV30 CY62136CV30 48-ball 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62138EV30 MoBL ® 2-Mbit 256 K x 8 MoBL Static RAM 2-Mbit (256 K × 8) MoBL® Static RAM Functional Description Features The CY62138EV30 is a high performance CMOS static RAM organized as 256K words by eight bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62138EV30 CY62138CV30

    ta 8268 ah

    Abstract: No abstract text available
    Text: CSR13 MIL-C-39003/01 Solid Tantalum Capacitors I l i l U D I I I I I I I K I I I S C C a V I l I K K C t i 2 i l l i a i S I t l X i S l l l l C I S GENERAL SPECIFICATIONS Hermetically Sealed Graded Failure Rates I I I E I g l t f S i l f g s DC Leakage:


    OCR Scan     		PDF CSR13 MIL-C-39003/01) non-con68 CSR13J394K* CSR13J474K* CSR13J474M* CSR13J564K* CSR13J684K* CSR13J684M* CSR13J824K* ta 8268 ah

    LT3973-3.3

    Abstract: L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3
    Text: m o le x £ros$ p eference Numbers Old P a r t i Hew Part i O U P a rti New Part i Old Part # New Part i Old P a r t i 07262M 07 84581-0001 0 93 5 6 K 0 7 8 45 6 6 -5 03 5 0 94 6 2 K 0 7 84566-5041 09566M 07 8 4 5 6 6 -0 0 6 5 07264M 07 8 4 5 8 1 -0 00 0 0 93 5 7 K 0 7


    OCR Scan     		PDF 07262M 09356K07 09462K07 09566M 07264M 09357K07 09462M 09567K07 07362M 09358K07 LT3973-3.3 L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3

    64Kx8 CMOS RAM

    Abstract: 64Kx8 dual-port CMOS RAM A13L IDT7M1001 IDT7M1003
    Text: PRELIMINARY IDT7M1001 IDT7M1003 128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE FEATURES DESCRIPTION: • High d en sity 1 M /5 1 2 K C M O S du al-port static R A M T h e ID T 7 M 1 0 0 1 /ID T 7 M 1 0 0 3 is a 1 2 8 K x 8 /6 4 K x 8 high­ s p e e d C M O S du al-port static R A M m odu le constructed on a


    OCR Scan     		PDF IDT7M1001 IDT7M1003 M/512K 64-pin IDT7006 IDT7M1001/1003 128K/64K 7M1001 7M1003 64Kx8 CMOS RAM 64Kx8 dual-port CMOS RAM A13L IDT7M1003