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    K 246 TRANSISTOR Search Results

    K 246 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 246 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KRC246

    Abstract: KRC245
    Text: SEMICONDUCTOR KRC241~KRC246 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES C ・With Built-in Bias Resistors. A ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process.


    Original     		PDF 800mA. KRC241 KRC246 KRC241 KRC242 KRC243 KRC244 KRC245 KRC246

    k 246 transistor

    Abstract: KTC9012S KTC9013S KTC9012 23 marking
    Text: SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity. 1 UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage


    Original     		PDF KTC9012S KTC9013S. -50mA -100mA, -10mA -20mA, 100MHz k 246 transistor KTC9012S KTC9013S KTC9012 23 marking

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9013. N E K G J D MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC9012 KTC9013. -50mA -100mA, -10mA -20mA, 100MHz

    KTC9012

    Abstract: D6491 KTC9012 transistor KTC9013 transistor KTC9013
    Text: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity. Complementary to KTC9013. N K E G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage


    Original     		PDF KTC9012 KTC9013. KTC9012 D6491 KTC9012 transistor KTC9013 transistor KTC9013

    KTC9013

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9012. N E K G J D MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF KTC9013 KTC9012. KTC9013

    KTC9012

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9013. N K E G J D MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage


    Original     		PDF KTC9012 KTC9013. 625mW 400mW KTC9012

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9012. N K E G J D MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage


    Original     		PDF KTC9013 KTC9012. 625mW 400mW

    KTC9013 transistor

    Abstract: KTC9013 transistor KTC9012 KTC9012
    Text: SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity. Complementary to KTC9012. N K E G SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage


    Original     		PDF KTC9013 KTC9012. KTC9013 transistor KTC9013 transistor KTC9012 KTC9012

    KTC9012S

    Abstract: KTC9013S
    Text: SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity. 1 UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage


    Original     		PDF KTC9012S KTC9013S. 10x8x0 KTC9012S KTC9013S

    TRANSISTOR BC 135

    Abstract: KTC9012S KTC9013S transistor bc 144 transistor BC 246
    Text: SEMICONDUCTOR KTC9013S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity. 1 UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage


    Original     		PDF KTC9013S KTC9012S. 10x8x0 TRANSISTOR BC 135 KTC9012S KTC9013S transistor bc 144 transistor BC 246

    Untitled

    Abstract: No abstract text available
    Text: STS9012 Semiconductor PNP Silicon Transistor Description • General purpose applicat ion. • Swit ching applicat ion. Features • Excellent h FE linear it y. • Com plem ent ary pair w it h STS9013 Ordering Information Type N O. M a r k in g STS9012 STS9012


    Original     		PDF STS9012 STS9013 KST-9015-000

    Untitled

    Abstract: No abstract text available
    Text: STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose applicat ion. C • Swit ching applicat ion. B Features C B E • Excellent h FE linearit y. • Com plem ent ary pair wit h STS9012 E TO-92 Ordering Information Type N O. STS9013


    Original     		PDF STS9013 STS9012 KSD-T0A047-000

    BF246

    Abstract: tic 246 h BF 246 tic 246 in 5 246 b BF 246 A
    Text: I 2SC D • 023SbOS QQQM4b4 T « S I E G N-Channel Junction Field-Effect Transistors BF 246 A 25C 0 4 4 6 4 S IE M E N S D A K T IE N G E S E L L S C H A F SE2Î2 5 B F246C BF 2 4 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar


    OCR Scan     		PDF 023SbOS F246C B--07 23Sb05 QGQ44bb BF246 tic 246 h BF 246 tic 246 in 5 246 b BF 246 A

    service-mitteilungen

    Abstract: stern elite BF-215 radio fernsehen Radio Fernsehen Elektronik bf 194 zk246 sowjetische transistoren PJ-130 BF194
    Text: SERVICE-MITTEILUNGEN SEITE iffläU IR a d i o -television | > //4 1-6 V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N AUSGABE: J U L I Das Stereo-Tonbandgerät ZK 246 ist ein Spitzenerzeugnis der polnischen Konsumgüter-Elektronik, das in einer relativ ge­


    OCR Scan     		PDF Schwarz/77ei II1/18/379 service-mitteilungen stern elite BF-215 radio fernsehen Radio Fernsehen Elektronik bf 194 zk246 sowjetische transistoren PJ-130 BF194

    BF256

    Abstract: BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C
    Text: 2SC D • S23SbOS Q Q tm tiH T « S I E Ö N-Channel Junction Field-Effect Transistors 25C 04-464SIEMENS AKTIENGESELLSCHAF D BF 246 A B F246B B F246C BF 24 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF amplifiers.


    OCR Scan     		PDF 023SbOS BF246B BF246C Q62702-F219 Q62702-F393 Q62702-F254 Q62702-F250 127mm BF256A BF2S68 BF256 BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C

    2SC1811

    Abstract: 2SA896 138D 2SA1015
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 250nS 190nS 2SC1811 2SA896 138D 2SA1015

    2SC1541

    Abstract: transistor 1548 b 4500cm
    Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF re-25 700mhz, 2sa795 Tc-25 2sa794 2sa900 V156S 100hz, 250pS 2SC1541 transistor 1548 b 4500cm

    2n4401 331

    Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
    Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2SA821S. 2SA830S. 2SA854S. 2SB822 2n4401 331 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B

    transistor BD 246

    Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
    Text: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A


    OCR Scan     		PDF BD136 BD135 MIL-STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241

    BDX 241

    Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
    Text: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A


    OCR Scan     		PDF BD137 BD138 MIL-STD-750. OT-32 OT-32 40PEP 80PEP BDX 241 TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137

    TIP 34 pnp

    Abstract: TIP NPN TIP 29 transistor TIP 31 Transistor tip 40 BD PNP TO-3P tip 30 Transistors tip 29 tip 30c
    Text: SlU ZIU M -K O M PLEM ENTARE-LEISTU N G STR ANSISTO REN Allgemeine und NF-Anwendungen SILICON COM PLEM ENTARY POW ER TRANSISTORS (General and Low-frequency Applications) 3-4 Ptot <a) T c = 25 °C (100 oc) W (a) |C Typ type NPN PNP BD BD BD BD 239 239 A 239 B


    OCR Scan     		PDF

    c2688 L

    Abstract: TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914 TIP29A
    Text: TYPES TIP29, TIP29A, TIP29B, TIP29C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP30, TIP30A, TIP30B, TIP30C • 30 W at 25°C Case Temperature • 1 A Rated Collector Current


    OCR Scan     		PDF TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C TIP29 TIP29A c2688 L TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914

    bd 125 equivalent

    Abstract: TIP 41 transistor texas instruments tip35 TIP 29 transistor transistor equivalent of tip 50 TIP 34 c TIP35 TIP 41 EQUIVALENT TIP 29 A transistor TIP 34 pnp
    Text: TYPES TIP35, TIP35A, TIP35B, TIP35C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FO R P O W E R -A M P L IF IE R A N D H IG H -S P E E D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH TIP36, TIP36A , TIP36B, TIP36C


    OCR Scan     		PDF TIP35, TIP35A, TIP35B, TIP35C TIP36, TIP36A, TIP36B, TIP36C TIP35 TIP35A bd 125 equivalent TIP 41 transistor texas instruments tip35 TIP 29 transistor transistor equivalent of tip 50 TIP 34 c TIP 41 EQUIVALENT TIP 29 A transistor TIP 34 pnp

    TIP34

    Abstract: TIP34C equivalent TIP33C TIP34A texas instruments tip34 TIP33 TIP33A TIP33B TIP34B TIP34C
    Text: TYPES TIP34, TIP34A, TIP34B, TIP34C P-N-IP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR P O W E R -A M P LIF IE R A N D H IG H -SP EE D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP33, TIP33A, TIP33B, TIP33C


    OCR Scan     		PDF TIP34, TIP34A, TIP34B, TIP34C TIP33, TIP33A, TIP33B, TIP33C TIP34 TIP34A TIP34C equivalent TIP33C texas instruments tip34 TIP33 TIP33A TIP33B TIP34B