Thermistor K153

Abstract: k683 K470 thermistor K224 k682 K164 K2600
Contextual Info: Scheiben Disks Maßbild Typ Outline drawing Type Nenn­ Toleranz ß-Wert widerstand Rated Tolerance B value resistance ^25 Af?25 Q K164 m 10 15 : 5%, : 10 %, 22 : 20 % 68 5,5max 100 150 220 330 470 680 1k 1.5 k 2.2 k 3.3 k 4.7 k 6.8 k 10 k 15 k 22 k 33 k 47 k

k3797

Abstract: NTC SOD-27 ntc 3977 c633
Contextual Info: NTC Thermistors for sensing of high temperatures Series 2322 . . 633 8. bulk , 633 3. (ammopack) Type of leads tinned Resistance at 25 °C 10 kΩ 20 kΩ 30 kΩ 100 kΩ 220 kΩ Tolerance on R-value ± 5%, ± 10% B-value B25/85 3977 K, 3797 K

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

SKR 170/04

Abstract: SKN 170 SKN 170/08 skr170
Contextual Info: SKN 170/SKR 170 ' frms = 350 A; lF A V= 220 A S K N 170/04 S K R 170/04* S K N 170/08 S K R 170/08* S K N 170/12 S K R 170/12* S K N 170/14 S K R 170/14* S K N 170/16 S K R 170/16* V rsm 400 V 800 V 1200 V 1400 V 1600 V V rrm 400 V 800 V 1200 V 1400 V 1600 V

SIEMENS saw sensor

Abstract: c619 siemens matsua saw 45 S 867
Contextual Info: Index of Types Type Page C C 619 C 620 C 621 Page S 39 41, 42 43, 44 K K 1150 K 164 K 220 K 227 K 276 K 350 K 45 K 500 Type 45 49, 50 46 64 74 47 72, 73 68 S 153 S 235 S 236 S 237 S 238 S 364 S 464 S 861 S 863 S 867 S 869 S 891 76 77 78, 79 80 81, 82 83 84

CT7343

Abstract: R0805 sot23-123 10K ohms 0805 package 4910a 4431 mosfet r51 c/4 P8208T SC4910 SC4910A
Contextual Info: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features K K K K K K K K K K K K The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and

Contextual Info: iirwumelektfonik 3 3 U-Extruded heatsinks art. no. Rth [K/W] 15 IC K 3 5 S A art. no. TO 220 Rth [K/W] S K 12 S A 2 x 3 2 2 X SOT 32 1 X SOT 32 15 30 S K 12 S A 32 art. no. Rth [K/W] 17 17 17 S K 13 3 5 S A 2 2 0 S K 13 3 5 S A 2 2 0 3,2 S K 13 3 5 S A 2 2 0 3,5

2SD476

Abstract: 2SB566 2SB566A 2SD476A Hitachi DSA00347
Contextual Info: 2SD476 K , 2SD476A(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB566(K) and 2SB566A(K) Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD476(K)

2sD476

Abstract: Hitachi DSA00164
Contextual Info: 2SD476 K , 2SD476A(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB566(K) and 2SB566A(K) Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD476(K)

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Description A K K K A TO-220AC STPSC8H065D K A NC D²PAK STPSC8H065G-TR K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon

STTH20R04FP

Abstract: st 393 STTH20R04 STTH20R04D STTH20R04G STTH20R04W
Contextual Info: STTH20R04 High efficiency rectifier Features • Ultrafast recovery ■ Low power losses ■ High surge capability ■ Low leakage current ■ A K A A K High junction temperature K TO-220FPAC STTH20R04FP Description DO-247 STTH20R04W K K The STTH20R04 is an ultrafast recovery power

Contextual Info: STTH20R04 High efficiency rectifier Features • Ultrafast recovery ■ Low power losses ■ High surge capability ■ Low leakage current ■ A K A A K High junction temperature K TO-220FPAC STTH20R04FP Description DO-247 STTH20R04W K K The STTH20R04 is an ultrafast recovery power

EPCOS 350 09

Abstract: k 871 B5782 B57871
Contextual Info: Temperature Measurement Leadless Disks / Leaded Disks Leadless disks / Leaded disks Page Leadless disks B57150, K 1150 B57220, K 220 B57350, K 350 B57820, K 820 64 66 68 70 Leaded disks B57164, K 164 B57871, S 871 B57881, S 881 B57885, S 885 B57891, M 891

S2006F1

Abstract: S2006L S2006V S2008F1 S201E S4006F1 S4006V S6006F1 S6006V S8006V
Contextual Info: 2004 Littelfuse, Inc. Thyristor Product Catalog E6 - 1 http://www.littelfuse.com +1 972-580-7777 SCRs Data Sheets Part Number Isolated VDRM & VRRM IT Non-isolated IGT 1 (2) (15) A TYPE (4) A A A G G A K G G K K A TO-92 K A A K G A TO-220 TO-202 G K A TO-220

Contextual Info: SQCA/CB RF Capacitors Ceramic 0505/1111 Low ESR High Q Capacitors Case Size A TABLE III: TC: C (±15%) Cap. pF Cap. Tol. 1000 1200 1500 1800 2000 K, M, N K, M, N K, M, N K, M, N K, M, N WVDC 50 50 50 50 50 Cap. pF Cap. Tol. 2200 2700 3300 3900 4700 K, M, N

SHARP LED gl3

Abstract: GL6E201 GL6P202 GL7R GL3P404 GL3P422 GL7P202 GL3P305 GL3P306 GL3P411
Contextual Info: Numeric LED Character Type of display height mm Radiation color A K A 10.16 K A 14.12 K A 8.0 K A 6.2 K A 8.0 K A 8.4 K A 7.6 K A 7.6 K A K 10.0 A K Page for ratings/characteristics diagrams *1 A: Anode common K: Cathode common Substrate Type Mold Type 6.0

2SB556A

Abstract: 2SB566 2SB556 2SB5 2SB566A 2SD476 2SD476A
Contextual Info: 2SB566 K , 2SB566A K Silicon PNP Triple Diffused Low Frequency Power Amplifier Power Switching Complementary Pair with 2SD476 K and 2SD476A K Absolute Maximum Ratings Ta = 25°C Item 2SB Symbol 566 K TO-220AB 2SB 566A K Unit ————————————————————–

cd75220

Contextual Info: Tol RDC IDC H % MAX IN ( ) (A) CD75-100 10 @2.52 MHz K 0.07 2.3 CD75-120 12 @2.52 MHz K 0.08 2 CD75-150 15 @2.52 MHz K 0.09 1.8 CD75-180 18 @2.52 MHz K 0.1 1.6 CD75-220 22 @2.52 MHz K 0.11 1.5 CD75-270 27 @2.52 MHz K 0.12 1.3 CD75-330 33 @2.52 MHz

JESD-79

Abstract: ddr3 2133 jesd79 JESD79-3E
Contextual Info: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

JESD79-3E

Abstract: 512Mx8 NT8GC72C4PC0NL D21-D20 512Mx8 SPD
Contextual Info: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

JESD79-3E

Abstract: PC3-14900 DDR3 SDRAM PC3-14900
Contextual Info: NT4GC72B89B0NL K / NT4GC72C89B0NL(K) NT8GC72B4PB0NL(K) / NT8GC72C4PB0NL(K) / NT8GC72B8PB0NL(K) / NT8GC72C8PB0NL(K) NT16GC72B4NB0NL(K) / NT16GC72C4NB0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

STTH8R066

Abstract: 0066G STTH8R06D STTH8R06DIRG STTH8R06 STTH8R06DI STTH8R06FP STTH8R06G STTH8R06G-TR STTH8R06R
Contextual Info: STTH8R06 Turbo 2 ultrafast high voltage rectifier Main product characteristics IF AV 8A VRRM 600 V IRM (typ) 5.5 A Tj 175°C VF (typ) 1.4 V trr (max) 25 ns K K A A TO-220AC STTH8R06D K TO-220FPAC STTH8R06FP K K Features and benefits • Ultrafast switching

s8 223j

Abstract: s6 5n 822j MS75089 MS75089-23 MS75088-13 S75087
Contextual Info: OHMITE LITTLE HENRIES" Inductive Components K Series Manufacturing Company R. F. Molded Chokes 1 4 3 8 ! 188 -3 6 525-± 4 7 7- 156 - 0 1 0 - 3 . 9 6 2 a- 25 '0 K M 150M K M 220M K M 330M K M 470M KM 5 60 K 18130-1 18130-2 18130-3 18130-4 18130-5 KM 680K KM 820K

Contextual Info: CERAMIC DISC CAPACITORS For High Voltage and Suppression Applications \ \ Dielectric Class 2 Class 1 Type Designation HAU HBU HCU HDU HEU HFU N750 Ceramic Material HAZ HAE HAX HBZ HBE HBX HCZ HCE HCX HDE K K K K K K K K K K 2000 6000 10000 2000 6000 10000