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    K 2059 TRANSISTOR Search Results

    K 2059 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 2059 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bulk inner box label ST

    Abstract: No abstract text available
    Text: 2N6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    PDF 2N6427 MMBT6427 2N6427 OT-23 MPSA14 bulk inner box label ST

    pa 2030a

    Abstract: 2SC4498 LB 1001 SANYO 2SA1722 k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95
    Text: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).


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    PDF 2SA1722, 2SC4498 QQ073bb T-31-13 10ki2) 2SA1722/2SC4498-applied 2SA1722 pa 2030a 2SC4498 LB 1001 SANYO k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95

    2SC4498

    Abstract: 2SA1722
    Text: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).


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    PDF i707b QQQ73fab 2SA1722, 2SC4498 r-35-/; 2SA1722/2SC4498-applied 2SA1722 2SC4498

    k 2059 TRANSISTOR

    Abstract: TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR
    Text: SANY O S E M I C O N D U C T O R 2SE CORP D 7 cH ? 0 7 b 000 3^33 7 2SC4400 T -3 I-IS 'r;' ,>V ^ ’sx'*>V:- N P N Epitaxial Planar Silicon Transistor 2059 High-Frequency General-Purpose Amp Applications F eatu res . High power gain • High cutoff frequency


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    PDF 2SC4400 2SC4400-applied k 2059 TRANSISTOR TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR

    SANYO SS 1001

    Abstract: 2SA1678 2SC4398 bau 95 T-37-I s2e transistor
    Text: SANYO SEMICONDUCTOR CORP 2SA1678, 2SC4398 22E D TTTTOTb 000731=4 T T-37-/3 ” P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications with Bias Resistances R1=10ki2, R 2=10k0 27 6 6 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit


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    PDF 2SA1678, 2SC4398 0Q073b4 T-37-Ã 10kfl, 10kohms 10kohms) 2SAl678/2SC4398-applied 2SA1678 SANYO SS 1001 2SC4398 bau 95 T-37-I s2e transistor

    2sd444

    Abstract: 2SD44 1SA16
    Text: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product


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    PDF 2SA1685, 2SC4443 2SA1685 2sd444 2SD44 1SA16

    IJ9 marking

    Abstract: 2SC4396 2SA1676 27641 transistor npn d 2058 bau 95 BL 19 20-69 SANYO CE
    Text: S A N Y O S E M I C O N D U C T O R CORP 2SA1676, 2SC4396 E2E D 7 ,H 7 0 7 b G0073LG S T - 37-/3 -r-JS-U . PN P /N PN Epitaxial Planar Silicon Transistors 2059 Switching Applications with Bias Resistances R1=47kQ, R2=47ki2 2764 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit


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    PDF G0073LG 2SA1676, 2SC4396 47ki2, 47kohm3 47kohms) 2SAl676/2SC4396-applied 2SA1676 IJ9 marking 2SC4396 27641 transistor npn d 2058 bau 95 BL 19 20-69 SANYO CE

    2SC4365

    Abstract: 2SC4402 SK200
    Text: SANYO SEMICONDUCTOR CORP SSE 7=1=1707^ D D O O böbT 2SC4402 2 T-3Ì-/7 NPN Epitaxial Planar Silicon Transistor 2059 V/U M IX, OSC, Low-Voltage Amp Applications 2755 Applications • VHFAJHF MIX/OSC, low-voltage high-frequency amplifiers Features fT=3.0GHz typ Vce = 3V


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    PDF 2SC4402-applied 2SC4365 2SC4402 SK200

    sj 2038

    Abstract: 2SD444 ic sj 2038 ANI 1015 IC ti 072 2SC1443 2SA1685 2SC4443 C4443 M685
    Text: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product


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    PDF 0OG707Ã 2SA1685, 2SC4443 2SA1685 sj 2038 2SD444 ic sj 2038 ANI 1015 IC ti 072 2SC1443 C4443 M685

    mosfet k 2038

    Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
    Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB


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    PDF 2SK2170 2SK1068 2SK1069 2SK1332 2SK2219 2SK303 2SK545 2SK771 mosfet k 2038 TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155

    45581

    Abstract: marking YT 2SC485
    Text: Ordering number : EN 4 5 5 8 2SC4851 i SAXYO i NPN Epitaxial Planar Silicon Transistor Muting Circuits F eatu res • Very small-sized package perm itting 2SC4851-applied sets to be made smaller and slimer. • Small output capacitance. • Low collector-to-emitter saturation voltage.


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    PDF 2SC4851 2SC4851-applied 12894HO AX-8027 45581 marking YT 2SC485

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3485 No.3485 2SC4694 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Muting Applications F eatu res • Adoption of FBET process • High DC current gain •H igh Vebo V e b o = 25V • High reverse hpE (150 typ)


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    PDF 2SC4694-applied 7190MH 2SC4694

    ic chip ic 4410

    Abstract: 4410 ic
    Text: O rd e rin g n u m b e r: E N 4 4 1 0 No.4410 SA%YO 2SC4909 NPN Epitaxial Planar Silicon Transistor Muting Circuits, Drivers F eatu res • High DC current gain. • On chip bias resistance Ri = 47kii, R2 = 47kf2 . •Very small-sized package perm itting 2SC4909-applied sets to be made sm aller and slimmer.


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    PDF 2SC4909 47kii, 47kf2) 2SC4909-applied N3093TH BX-0302 ic chip ic 4410 4410 ic

    C-4555

    Abstract: c4555
    Text: O rd e rin g n u m b n r: EN 3 1 8 7 2SA1745/2SC4555 No.3187 PNP/NPN Epitaxial Planar Silicon Transistor S A \Y O Low-Frequency G eneral-Purpose _Amp A pplications Features •Very small-sized package perm itting the 2SAl745/2SC4555-applied sets to be made small and slim


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    PDF 2SA1745/2SC4555 2SAl745/2SC4555-applied 2SA1745 200mA 2SA1745/2SC4555 2SA1745 2SC4555 7219YT 1745/2S 1745/2SC C-4555 c4555

    2SD444

    Abstract: No abstract text available
    Text: I O rd e rin g n u m b e r EN 3200 iSA%YO 2SA1685/2SC4443 No.3200 PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • Fast switching speed • High gain-bandwidth product • Low saturation voltage : 2SA1685 A bsolute M axim um R atings at Ta = 25°C


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    PDF 2SA1685/2SC4443 2SA1685 1685/2SC4443 2SD444

    2N4424

    Abstract: gli rca RCA Solid State Power Transistor "to-98" package 2C3-42T94
    Text: Dï SOLI» STATE ï Er| 3Ö750Ö1 DDlVTBb h 01E 17936 3875081 G E SOLID STATE - Signal Transistors- D T '35-/5’ 2N4424 Silicon Transistors F e a tu re s : • L o w Saturation Voltage ■ High B eta * 9 0 0 m W @ T c = 2 5 °C


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    PDF 2N4424 900mW@ 2N4424 92C9-417Â gli rca RCA Solid State Power Transistor "to-98" package 2C3-42T94

    SANYO CP Package

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS OF SURFACE M O UN T TRANSISTORS Vol.2 • A l l of Sanyo Surface Mount T ransistor Vol.2 package dimensions are illustrated below. • A l l dimensions are in mm, and dimensions which are not followed by min. or max. are represented by typical values.


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    PDF 018A/B 2045B SANYO CP Package

    EN4410

    Abstract: ic marking 4410 FXK 53 marking jn bx-0302 2SC4909
    Text: Ordering n u m b e r:E N 4 4 1 0 2SC4909 No.4410 NPN Epitaxial Planar Silicon Transistor SM YO i Muting Circuits, Drivers F e a tu re s • High DC current gain. •On-chip bias resistance Ri = 47kO, R2 = 47kO . • Very small-sized package perm itting 2SC4909-applied sets to be made smaller and slimmer.


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    PDF EN4410 2SC4909 47ki2) 2SC4909-applied EN4410 ic marking 4410 FXK 53 marking jn bx-0302

    2SC3772

    Abstract: 2SC4403
    Text: Ordering number : EN 2756 _ 2 S C 4 4 0 3 NPN Epitaxial Planar Silicon Transistor VHF/UHF Local Oscillator Applications Applications • VHF/UHF oscillators Features • High cutoff frequency : fr = 3.0GHz typ : MAG= 12dB typ f=0.9GHz •High power gain


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    PDF 2SC4403 2SC4403-applied 2SC3772 2SC4403

    transistor npn d 2058

    Abstract: 2SC4398 2SA1678 BU 2058 transistors marking HJ SANYO SS 1001
    Text: SANYO SEMI CONDUCTOR CORP 2SA1678, 2SC4398 2EE D 71*170711 00073b4 T T -3 7 -/3 7~ ~ 3s-n Ä ^ P N P/N P N Epitaxial Planar S ilico n Tra nsisto rs 2059 Switching Applications with Bias Resistances R1=10kfl, R2=10kß @2766 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit


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    PDF 2SA1678, 2SC4398 00073b4 T-37-Ã 10kfl, 10kohms 10kohms) 2SAl678/2SC4398-applied 2SA1678 transistor npn d 2058 2SC4398 BU 2058 transistors marking HJ SANYO SS 1001

    transistor npn d 2058

    Abstract: 2PD601A
    Text: Philips Semiconductors BB bb53T31 N APIER 002b055 473 IA P X NPN general purpose transistor FEATURES objective specification b7E PHILIPS/DISCRETE 2PD601; 2PD601A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. DESCRIPTION


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    PDF bb53T31 002b055 2PD601; 2PD601A 2PB709 2PB709A 2PD601Q: 2PD601R: 2PD601S: 2PD601AQ: transistor npn d 2058 2PD601A

    2SC4694

    Abstract: TA11
    Text: Ordering num ber: EN 3485 SM Ê YO i No.3485 2SC4694 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Muting Applications F eatu res • Adoption of FBET process • High DC current gain • High V eb o V e b o —25V • High reverse hpE (150 typ)


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    PDF 2SC4694 2SC4694-applied 2SC4694 TA11

    transistor kd 2059

    Abstract: KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SA1677 2SC4397
    Text: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit


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    PDF 2SA1677, 2SC4397 0D073Lj2 T-37-13 22ki2, 22ki2) 22kohms 22kohms) 2SA1677/2SC4397-appiled 2SA1677 transistor kd 2059 KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SC4397

    transistor npn d 2058

    Abstract: k 2059 scr gate driver ic 2SA1677 2SC4397 s2e transistor
    Text: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit


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    PDF 0D073L 2SA1677, 2SC4397 T-37-Ã 22ki2, 22ki2) 22kohms 22kohms) 2SA1677/2SC4397-appiied 2SA1677 transistor npn d 2058 k 2059 scr gate driver ic 2SC4397 s2e transistor