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    K/TRANSISTOR C129 Search Results

    K/TRANSISTOR C129 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K/TRANSISTOR C129 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    d667 transistor

    Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot
    Text: ORDER NO. CPD0304020C1 Notebook Computer CF-73 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model Number Reference The following models are numbered in accordance with the types of CPU, LCD and HDD etc. featured by product.


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    CPD0304020C1 CF-73 CF-731 SuC1707 C1709 C1712 C1713 C1711 R1701 R1700 d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot PDF

    K105 transistor

    Abstract: K110 B3 transistor k105 transistor C458 transistor C639 varistor 520 k14 Diode C84 009 pct303 g5020 toshiba l500
    Text: ORDER NO. CPD0212020C0 Personal Computer CF-T1 This is the Service Manual for the following areas. M …for U.S.A. and Canada E …for U.K. G …for Germany Model No. CF-T1R64ZZ1 2 1: Operation System G: Microsoft Windows® XP Professional MUI K: Microsoft® Windows® XP Professional


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    CPD0212020C0 CF-T1R64ZZ1 65536/16M dots/1024 dots/1280 UNR9113J0L K105 transistor K110 B3 transistor k105 transistor C458 transistor C639 varistor 520 k14 Diode C84 009 pct303 g5020 toshiba l500 PDF

    transistor C2075

    Abstract: g10 smd transistor SMD Transistor 1c
    Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from


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    74bbasi H11A1 H11A1Z H11A1 E50151 MCT9001 transistor C2075 g10 smd transistor SMD Transistor 1c PDF

    C1685 transistor

    Abstract: transistor c1684 TRANSISTOR C1685 C1684 transistor C1685 R transistor an c1685 transistor transistor c1684 NPN C2079 optocoupler H11A1 C1682 transistor
    Text: E ö TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE DIMENSIONS •The H11A1 is a phototransistor-type optically coupled isolator. An infrared èmitting diode manufactured from specially grown gallium arsenide is selectively coupled


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    H11A1 C2079 E90700 C1683 C1684 C1685 C1296A C1294 C1685 transistor transistor c1684 TRANSISTOR C1685 C1684 transistor C1685 R transistor an c1685 transistor transistor c1684 NPN optocoupler H11A1 C1682 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: E O TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE DIMENSIONS 1 The H11A1 is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grown gallium arsenide is selectively coupled


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    H11A1 H11A1 E90700 C1684 C1683 C1296A C1685 C1294 PDF

    transistor c1684

    Abstract: C1685 transistor C1685 R transistor C1681 TIL111 TRANSISTOR C1685 C1684 transistor C1685 npn
    Text: PHOTOTRANSISTOR OPTOISOLATOR OPTDELECIRDIIICS TIL111 DESCRIPTION PACKAGE DIMENSIONS db The TIL111 is a phototransistor-type optically coupled isolator. An infrared em itting dio d e m anufactured from specially grow n gallium arsenide is selectively coupled


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    TIL111 TIL111 C2079 C1681 C1683 C1684 C1685 C1296A C1294 transistor c1684 C1685 transistor C1685 R transistor C1681 TRANSISTOR C1685 C1684 transistor C1685 npn PDF

    C1685

    Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
    Text: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,


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    74bbflSl 0GQ3577 MCT62 MCT61 MCT66 16-pin C2091 MCT9001 C1685 C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A PDF

    C1685 transistor

    Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
    Text: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic


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    H11A1 H11A1Z E50151 C2090 C1683 C1684 C1685 C1296A C1685 transistor C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor PDF

    C1685

    Abstract: C1685 transistor C1681 NPN C1685 TRANSISTOR C1685 transistor c1684 C1684 C1684 transistor C1685 R transistor C1683
    Text: PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL 111 PACKAGE DIMENSIONS t r if I J_ max o w ® ^ . 8.89 8.38 J typ L ~ 1 r _ DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled


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    TIL111 ST1603A TIL111 E90700 C2079 C1682 C1684 C1296A C1683 C1685 C1685 C1685 transistor C1681 NPN C1685 TRANSISTOR C1685 transistor c1684 C1684 C1684 transistor C1685 R transistor C1683 PDF

    C1681

    Abstract: C1680 C1682 transistor C1243 C1686 MCT6 equivalent C1684 r .85 transistor C1682 MCT66 MCT66 QUALITY
    Text: QUALITY TECHNOLOGIES DUAL PHOTOTRANSISTOR OPTOCOUPLERS 1 MCT6 MCT62 MCT61 MCT66 DESCRIPTION The MCT6X optoisolators have two channels for high density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor


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    MCT62 MCT61 MCT66 16-pin E50151 C1681 C1682 C1681 C1680 C1682 transistor C1243 C1686 MCT6 equivalent C1684 r .85 transistor C1682 MCT66 MCT66 QUALITY PDF

    C1685 transistor

    Abstract: TRANSISTOR C1685 C2091 C1685 C1685 R transistor
    Text: a fe ., DUAL PHOTOTRANSISTOR OPTOCOUPLERS s» OPTOELECTRONICS MCT6 MCT62 MCT61 PACKAGE DIMENSIONS DESCRIPTION The MCT6X optoisolators have tw o channels for high density applications. For four channel applications, tw o-packages fit into a standard 16-pin DIP socket. Each


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    MCT62 MCT61 16-pin E50151 C1685 C1296A MCT61 MCT62 C1685 transistor TRANSISTOR C1685 C2091 C1685 C1685 R transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


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    TIL111 TIL111 E90700 ST1603A C2079 74bbfi C1684 C1683 C1685 C1294 PDF

    a36 smd transistor

    Abstract: transistor smd 4z
    Text: ÖUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D 74fe.bfl51 0003431 3 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS < != > CNY17-1/1Z CN Y17-3/3Z C N Y17-2/2Z CN Y17-4/4Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED


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    bfl51 CNY17-1/1Z Y17-3/3Z Y17-2/2Z Y17-4/4Z CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: a36 smd transistor transistor smd 4z PDF

    transistor c1684

    Abstract: No abstract text available
    Text: fiJUALITY T E C H N O L O G I E S 6 CORP 27 E QUALITY TECHNOLOGIES 1 D • 74fc,bflSl G 0 D 3 S 3 7 Ö phototrahs.stor optocouplhr ^ L MCT272 DESCRIPTION PACKAGE DIMENSIONS The MCT272 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    MCT272 MCT272 MCT9001 transistor c1684 PDF

    Untitled

    Abstract: No abstract text available
    Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    74tibfiSl Q003541 MCT274 MCT274 C2090 C2079 MCT9001 PDF

    transistor c1684

    Abstract: C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1685 C1684 transistor C1661
    Text: TRANSISTOR OUTPUT OPTOCOUPLER PTOELECIRDNICS H11A1 DESCRIPTION PACKAGE DIMENSIONS t ~ r~ J-3 6-86 MAX 6.10 w J ' 03 J_ if f g j 8.89 _ 8.38 _ 0.2 a T - The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from


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    H11A1 H11A1 E90700 C1683 C1684 C1685 C1296A transistor c1684 C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1684 transistor C1661 PDF

    Untitled

    Abstract: No abstract text available
    Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


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    MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A 74bbfl51 C1294 PDF

    C1685 transistor

    Abstract: C1685 C1681 transistor c1684 TRANSISTOR C1685 NPN C1685 C1682 transistor c168 C1680 TMT Isolator
    Text: f e ll PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MCT2200 MCT2201 MCT2202 DESCRIPTION PACKAGE DIMENSIONS Î The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared em itting diode is selectively coupled with an NPN


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    MCT2200 MCT2201 MCT2202 MCT2200, MCT2202 E90700 ST1603A c2079 C1683 C1685 transistor C1685 C1681 transistor c1684 TRANSISTOR C1685 NPN C1685 C1682 transistor c168 C1680 TMT Isolator PDF

    C1684

    Abstract: C1683 C1681 transistor c1684 C1684 transistor transistor c1682 C1296A
    Text: C sö PHOTOTRANSISTOR OPTOCOUPLER DPTDELECîHGNiCS 1 MCT271 PACKAGE DIMENSIONS DESCRIPTION The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.


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    MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A transistor c1684 C1684 transistor transistor c1682 C1296A PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW


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    MCT270 MCT270 E90700 ST1603A C1682 C1681 C1683 C1685 C1296A 74bfc PDF

    SMD Transistor AFR

    Abstract: No abstract text available
    Text: 3UALITY T E C H N O L O G I E S CO RP QUALITY TECHNOLOGIES O E7E D‘ 74bbfl51 Û D 0 3 S S 3 b PHOTOTRANSISTOR OPTOCOUPLER T-41-83 MCT277 PACKAGE DIMENSIONS The MCT277 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    74bbfl51 T-41-83 MCT277 MCT277 C2090 15pseconds MCT9001 SMD Transistor AFR PDF

    C1684 r .85 transistor

    Abstract: transistor c1684
    Text: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.


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    MCT275 MCT275 E50151 C1683 C1684 C1685 C1284 C1296A C1684 r .85 transistor transistor c1684 PDF

    Untitled

    Abstract: No abstract text available
    Text: I PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MCT2200 MCT2201 MCT2202 PACKAGE DIMENSIONS DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared emitting diode is selectively coupled with an NPN


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    MCT2200 MCT2201 MCT2202 MCT2200, MCT2201 MCT2202 E90700 C2079 C1683 C1296A PDF

    C2079

    Abstract: optocoupler mct2e transistor c1684 C16SE 1R10 diode C1684 C1684 transistor mct2e optocoupler Optocoupler IC MCT2E MCT2E equivalent
    Text: ^ 2 J5 E O - ^ I PHOTOTRANSISTOR OPTOCOUPLER 0PT0ELECTRD8ÍC3 MCT2E PACKAGE DIMENSIONS DESCRIPTION The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS I 2'5 4 ! 0.40 a n o d e JT


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    C2079 E90700 C129SA optocoupler mct2e transistor c1684 C16SE 1R10 diode C1684 C1684 transistor mct2e optocoupler Optocoupler IC MCT2E MCT2E equivalent PDF