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    JUNE1997 Search Results

    JUNE1997 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    June 1997 Linear Technology LinearTechnology Chronicle Original PDF
    June 1997 Linear Technology Linear Technology Magazine Original PDF

    JUNE1997 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PQ208

    Abstract: XC4000E XC4000EX XC4000XL XC9500
    Text: Migrating Cadence Designs to M1.3  June1997 Version M1.3 Updated excerpt from Xilinx Software Conversion Guide from XACTstep v5.X to XACTstep vM1.X. June 1997 vM1.3 Application Note excerpt Summary This guide will help you convert your existing Cadence Concept designs from previous versions of XACTstep 5.X to


    Original     		PDF June1997 XC4000E/L, XC4000EX, XC4000XL, XC9500 X7747 PQ208 XC4000E XC4000EX XC4000XL XC9500

    Oscillator XR2209

    Abstract: 2209cp xr2209cp XR-2209CP SQUARE WAVE TO triangle wave schematic diagram EXAR XR2209 2209 XR2209 XR-2209 XR-2209CN
    Text: XR-2209 .the analog plus Voltage-Controlled Oscillator company TM June 1997–3 FEATURES APPLICATIONS D Excellent Temperature Stability 20ppm/°C D Voltage and Current-to-Frequency Conversion D Linear Frequency Sweep D Stable Phase-Locked Loop D Wide Sweep Range (1000:1 Minimum)


    Original     		PDF XR-2209 20ppm/ XR-2209 June1997 Oscillator XR2209 2209cp xr2209cp XR-2209CP SQUARE WAVE TO triangle wave schematic diagram EXAR XR2209 2209 XR2209 XR-2209CN

    M27C256B datecode

    Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038
    Text: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


    Original     		PDF

    intel g41 motherboard circuit block diagram downs

    Abstract: AC flight deck socket box intel g41 circuit pcb diagram schematic diagram of TV memory writer 242692 82450 intel g45 MOTHERBOARD pcb CIRCUIT diagram schematic intel g41 intel g45 circuit diagram 82453GX
    Text: E n n n n n n PENTIUM PRO PROCESSOR AT 150 MHz, 166 MHz, 180 MHz and 200 MHz Available at 150 MHz, 166 MHz, 180 MHz and 200MHz core speeds n Binary compatible with applications running on previous members of the Intel microprocessor family n Optimized for 32-bit applications


    Original     		PDF 200MHz 32-bit intel g41 motherboard circuit block diagram downs AC flight deck socket box intel g41 circuit pcb diagram schematic diagram of TV memory writer 242692 82450 intel g45 MOTHERBOARD pcb CIRCUIT diagram schematic intel g41 intel g45 circuit diagram 82453GX

    fss130

    Abstract: No abstract text available
    Text: ¡BMí*« ? FSS130D, FSS130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June1997 Features Package • 11 A, 100V, rDS ON = 0.210Í2 TO-257AA Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) Single Event Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF e1997 FSS130D, FSS130R O-257AA 36MeV/mg/cm2 1-800-4-HARRIS fss130

    r6k diode

    Abstract: FDC6303N
    Text: June1997 F/MRCHII-D ADVANCE INFORMATION Ml CONDUCTOR t o FDC6303N Digital FET, Dual N-Channel General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very


    OCR Scan     		PDF June1997 FDC6303N r6k diode

    Untitled

    Abstract: No abstract text available
    Text: F A I R C H June1997 I L D SEM ICONDUCTO R PRELIMINARY tm FDV303N Digital FET, N-Channel General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize


    OCR Scan     		PDF June1997 FDV303N

    D2259

    Abstract: No abstract text available
    Text: ISSI 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM ADVANCE INFORMATION JUNE1997 FEATURES DESCRIPTION • Fast access time: The IS S IIS61SP12836 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,


    OCR Scan     		PDF 5ns-166 8ns-150 4ns-133 5ns-100 100-Pin 119-pin IS61SP12836 TDD4404 PK017-1A T004404 D2259

    Untitled

    Abstract: No abstract text available
    Text: FSL110D, FSL110R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june1997 Description Features • The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened M O S F E T s specifically designed for commercial and military space


    OCR Scan     		PDF FSL110D, FSL110R june1997 1-800-4-HARRIS

    S8936

    Abstract: DS8936
    Text: FA IR C H ILD SEM ICONDUCTO R June1997 tm NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF e1997 NDS8936 S8936 DS8936

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		PDF KM616V1002B/BL, KM616V1002BI/BLI 64Kx16 June-1997 44-SOJ-400 44-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS0S7C - APRIL 1998 - REVISED JUNE 199? Organization: - DRAM: 262144 Words x 16 Bits - SAM: 256 Words x 16 Bits Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports Data-Transfer Function From the DRAM to


    OCR Scan     		PDF SMJ55166 16-BIT SGMS057C

    Untitled

    Abstract: No abstract text available
    Text: KM616V1002A/AL, KM616V1002AI/ALI CMOS SRAM Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM616V1002A/AL, KM616V1002AI/ALI 64Kx16 12/15/17/20ns 200/190/180/170mA 170/165/165/160mA June-1997

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM681001B/BL, KM681001BI/BLI Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev .N o. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM681001B/BL, KM681001BI/BLI 128Kx8 June-1997 32-SOJ-300 32-SOJ-400 June-1997