2A1110
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS 5.50 [.217] DEEP THREADED HOLES, SEE ORDERING CODE THREAD OPTION 1 TOP PORT POSITION #1 REV DESCRIPTION, ECN, EAR NO. DATE D PRODUCT DRAWING EAR 13246 MAR31/08 K.L. E REV PER EAR 13902 JUL12/11 K.L. 14.20±0.25 .559±.010 5.00 .197
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MAR31/08
JUL12/11
APR02/08
P-MUSB-C111-XX
2A1110
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Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS 1 3.25 .128 MOUNTING CODE 02 SHOWN E REV DESCRIPTION, ECN, EAR NO. DATE B GUIDE PIN UPDATE EAR14097 JUN19/12 APP'D C REMOVE 10 PWR CONTACT OPTION JUL12/12 S.M. D ADD UL FILE NUMBER MAY15/13 S.M. S.M. 1 DWR - T X XX P - V X 1 X - 0X
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EAR14097)
JUN19/12
JUL12/12
MAY15/13
APR11/11
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PDF
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Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS 1 3.25 .128 MOUNTING CODE 02 SHOWN E F 9.14 .360 TYP. 2.74 .108 TYP. DATE UPDATE SOCKET APR04/12 APP'D A.G C UPDATE MOUNTING OPTIONS JUL10/12 S.M D REMOVED 10 PWR CONTACT OPTION JUL12/12 S.M E ADD UL FILE NO. JUN14/13 S.M 1 DWR - T X XX S - V X 1 X - 0X
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JUL10/12
JUL12/12
JUN14/13
APR04/12
APR11/11
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PDF
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Untitled
Abstract: No abstract text available
Text: PS13201 500MHz 75dB Logarithmic/Limiting Amplifier Data Sheet 210892 issue 3 Jul-12 FEATURES • • • • • • • • 75dB Dynamic Range Surface Mount SO Package Adjustable Log Slope and Offset 0dBm RF Limiting Output 60dBm Limiting Range 2V Video Output Range
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PS13201
500MHz
Jul-12
60dBm
400user
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PDF
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BCP29
Abstract: BCP49 VPS05163
Text: BCP29, BCP49 NPN Silicon Darlington Transistors For general AF applications 4 High collector current High current gain Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29
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BCP29,
BCP49
BCP28/48
VPS05163
EHA00009
BCP29
OT223
BCP29
BCP49
VPS05163
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PDF
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BCR08PN
Abstract: VPS05604
Text: BCR08PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated NPN/PNP Transistors in one package Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation
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BCR08PN
VPS05604
OT-363
EHA07193
EHA07176
OT363
Jul-12-2001
BCR08PN
VPS05604
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BCR169S
Abstract: VPS05604 marking WSs
Text: BCR169S PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=4.7k) 2 3 1 VPS05604 C1 B2 E2
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BCR169S
VPS05604
EHA07266
OT363
Jul-12-2001
BCR169S
VPS05604
marking WSs
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PDF
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BCR198S
Abstract: VPS05604
Text: BCR198S PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=47k, R2=47k) 2 3 1 VPS05604
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BCR198S
VPS05604
EHA07173
OT363
Jul-12-2001
BCR198S
VPS05604
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PDF
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SOTDMA
Abstract: nrzi HDLC CMX910 PLC hmt vhf fsk modem ic CMX7032 RX-2 -G 2248 2249 vhf fsk modem limiter-discriminator
Text: Marine AIS Processor ICs CML Microcircuits AIS-Dedicated Processors for Maritime Safety COMMUNICATION SEMICONDUCTORS . . . . . . for I and Q Digital and Limiter-Discriminator (Analogue) Based Systems INN/AIS/1 www.cmlmicro.com CML AIS Products With the high integration on-chip of AIS-specific functions and wide-ranging data-signal processing capabilities, these three dedicated AIS IC products
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and336
SOTDMA
nrzi HDLC
CMX910
PLC hmt
vhf fsk modem ic
CMX7032
RX-2 -G
2248 2249
vhf fsk modem
limiter-discriminator
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PDF
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1N5625GP
Abstract: No abstract text available
Text: 1N5624GP . 1N5627GP 3.0 Amp. Glass Passivated Junction Rectifier Current 3.0 A at 70º C Voltage 200V to 800 V DO-201AD DO-27 R FEATURES Glass passivated chip junction Hyperectifier structure for high reliability Cavity-free glass-passivated junction
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1N5624GP
1N5627GP
DO-201AD
DO-27)
2011/65/EU
2002/96/EC
MIL-STD-750
J-STD-002
1N5625GP
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Untitled
Abstract: No abstract text available
Text: MBRS10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES Low leakage current Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency
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MBRS10H45CTC
MBRS10H200CTC
2011/65/EU
2002/96/EC
J-STD-020,
O-263AB
mbrs10hctc
Jul-12
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PDF
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Untitled
Abstract: No abstract text available
Text: FT10.J INSULATED STANDARD TRIAC On-State Current 10 Amp Gate Trigger Current £ 50 mA 18 £ 100 mA (17) Off-State Voltage 200 V ÷ 800 V INSULATED TO-220AB 1 FEATURES Glass/passivated die junctions Provides voltage insulated tab (rated at 2500V RMS)
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O-220AB
2011/65/EU
2002/96/EC
J-STD-020,
O-220AB.
ft10jst
Jul-12
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PDF
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Untitled
Abstract: No abstract text available
Text: FT06.J INSULATED STANDARD TRIAC On-State Current 6 Amp Gate Trigger Current £ 50 mA 18 £ 100 mA (17) Off-State Voltage 200 V ÷ 800 V INSULATED TO-220AB 1 FEATURES Glass/passivated die junctions Provides voltage insulated tab (rated at 2500V RMS)
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O-220AB
2011/65/EU
2002/96/EC
J-STD-020,
O-220AB.
ft06jst
Jul-12
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PDF
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Untitled
Abstract: No abstract text available
Text: FT12.J INSULATED HIGH COMMUTATION TRIAC On-State Current 12 Amp Gate Trigger Current £ 50 mA 16 £ 35 mA (14) Off-State Voltage 200 V ÷ 800 V INSULATED TO-220AB 1 FEATURES Provides voltage insulated tab (rated at 2500V RMS) Glass/passivated die junctions
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O-220AB
2011/65/EU
2002/96/EC
J-STD-020,
O-220AB.
ft12jhc
Jul-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TENTATIVE DATA SHEET FES1DWSR TG 1.0 Amp. Surface Mount Top Glass Passivated Ultrafast Very Soft Recovery Rectifier Current 1.0 A Voltage 200 V SOD123W FEATURES Top-Glass Technology Low profile package Ideal for automated placement Low power losses, high efficiency
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OD123W
2011/65/EU
2002/96/EC
J-STD-020,
OD123W.
Jul-12
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses High operational reliability Applications Welding equipment High current application up to 10 kHz
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0102C0400
1768/138a,
com/semiconductors11c
Jul-12
DS/293/11c
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PDF
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BCR135S
Abstract: VPS05604
Text: BCR135S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=10k, R2=47k) 2 3 1 VPS05604
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BCR135S
VPS05604
EHA07174
OT363
Jul-12-2001
BCR135S
VPS05604
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PDF
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BCR119S
Abstract: VPS05604
Text: BCR119S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=4.7k) 2 3 1 C1 B2 E2 6 5 4 VPS05604
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BCR119S
VPS05604
EHA07265
OT363
Jul-12-2001
BCR119S
VPS05604
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PDF
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BCR133S
Abstract: VPS05604
Text: BCR133S NPN Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=10k, R2 =10k) 2 3 1 VPS05604
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BCR133S
VPS05604
EHA07174
OT363
Jul-12-2001
BCR133S
VPS05604
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PDF
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BCR183S
Abstract: VPS05604
Text: BCR183S PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated Transistors with good matching in one package Built in bias resistor (R1=10k, R2 =10k) 2 3 1 VPS05604
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BCR183S
VPS05604
EHA07173
OT363
Jul-12-2001
BCR183S
VPS05604
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PDF
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Untitled
Abstract: No abstract text available
Text: 1T3G . 1T7G 1.0 Amp. Glass Passivated Junction Rectifier Current 1.0 A at 50º C Voltage 200V to 1000 V DO-41 Mini FEATURES Glass passivated chip junction High reliability Cavity-free glass-passivated junction Low forward voltage drop
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DO-41
2011/65/EU
2002/96/EC
MIL-STD-750
J-STD-002
JESD22-B102.
Jul-12
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PDF
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Untitled
Abstract: No abstract text available
Text: GP10DI . GP10QI 1.0 Amp. Glass Passivated Junction Rectifier Current 1.0 A at 55º C Voltage 200V to 1200 V DO-204AL DO-41 R FEATURES Glass passivated chip junction Hyperectifier structure for high reliability Cavity-free glass-passivated junction
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GP10DI
GP10QI
DO-204AL
DO-41)
2011/65/EU
2002/96/EC
MIL-STD-750
J-STD-002
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PDF
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PBT 20 GF Tyco
Abstract: usb connector
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2009 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 1 2 AUG ,2006. LOC DIST R E VISIO N S ALL RIGHTS RESERVED. p LTR DESCRIPTION D DATE DWN 31 JUL12 REVISED. ECR —12 —0 0 2 3 6 3 APVD U J D A o y
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OCR Scan
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JUL12
762/zm
048/xm
31MAR2000
PBT 20 GF Tyco
usb connector
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PDF
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CGY2030M
Abstract: SSOP16 SSOP20 TL 188 TRANSISTOR PNP
Text: Philips Semiconductors Preliminary specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically
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OCR Scan
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SSOP16
CGY2030M
CGY2030M
711032b
OlOblD45
SSOP20
TL 188 TRANSISTOR PNP
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PDF
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