CR305
Abstract: CR101 CR102 CR103 CR104 CR105 CR106 CR107 CR301 CR302
Text: DIODES INC OR PO RATE D ' _ T4 d | Efl4fl7T3 □ □ □ D E C]3 □ T ~ 'As" RECTIFIER CELLS DIODES IN CO RPORATED T4 DEgBflMflT^B D O O D a ^ | OPERATING AND STORAGE TEMPERATURE -65°C to +150°C a PK *r juAdc a PK 'fm Maximum Reverse
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CR101
CR102
CR103
CR104
CR105
CR106
CRCR303
FCR305
FCR306
FCR307.
CR305
CR107
CR301
CR302
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CA102
Abstract: CR101 CR102 CR103 CR104 CR105 CR106 CR107 CR301 CR302
Text: OPERATING AND STORAGE TEMPERATURE -65°C to +150°C TYPE ' Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz *r juAdc V FM Trr a PK nS ' fm O l FM Surge Maximum Reverse Recovery Time Maximum Forward Voltage @25° C T a
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CR101
CR102
CR103
CR104
CR105
CR106
CR107
CR301
CR302
CR303
CA102
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75V 150mA Diode
Abstract: No abstract text available
Text: COMPUTER DIODE 1c i r 150mA Switching Diode vy i" 1N4153, JAN, JANTX & JANTXV I N 4153 1N4534, JAN, JANTX & JANTXV 1N4534 FEATURES • • • • DESCRIPTION This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery
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150mA
1N4153,
1N4534,
1N4534
MIL-S-19500/337
DO-34
DO-35
02X73
75V 150mA Diode
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d1830
Abstract: 200F R1200 R1500 R2000 R2500 R3000
Text: ^ DIODES INCORPORATED DE | aSMSTIB DOMST! 0 7= 2-j - OS' HIGH VOLTAGE RECTIFIERS OPERATING AND STORAGE TEMPERATURE -65°C to +150°C / _ "v*' . \ TYPE Maximum ’ • Peak- • -•' • Reverse . : Voltage V . Maximum Average ' - Rectified Current @ Half-Wave —
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VOLTAGE/DO-41
/DO-15
R1200
R1500
R2000
R2500
DI81J5C
DI82QC
D18300-
DI840C
d1830
200F
R3000
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subminiature 5647
Abstract: UHF DETECTOR 5647 subminiature tubes
Text: SYLVA N IA fig^ . . , engineering data service 5647 QUICK REFERENCE DATA M ECHANICAL DATA B u l b . T-l B a s e .Subminiature Button Flexible Leads
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MC 9080
Abstract: klystron 2k25 2K25 2K45 reflex klystron klystron klystron 2k25 jan 2K25 klystron Bendix 6116 BENDIX reflex klystron
Text: File Catalog: Electron Tube Products Section: Microwave Tubes 6116 '*‘T&n<fpSType TK-62 REFLEX KLYSTRON T H E R M A LLY T U N E D DESCRIPTION The 6 1 1 6 (Bendix Type T K -62 ) tube is a ru g g e d iz e d low v o lta g e therm ally tuned X -b a n d reflex klystron, d e
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TK-62
MC 9080
klystron 2k25
2K25
2K45
reflex klystron
klystron
klystron 2k25 jan
2K25 klystron
Bendix 6116
BENDIX reflex klystron
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1 meg ohm variable resistor
Abstract: 400C LA 4108 sylvania 57 tube subminiature tubes B5137
Text: SYLVANIA^ ^ SYLVANIA engineering data service M ECHANICAL DATA QUICK R E F E R E N C E DATA B u l b .T-3 B a s e . E8-10, Subminiature Button Flexible Leads
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E8-10,
1 meg ohm variable resistor
400C
LA 4108
sylvania 57 tube
subminiature tubes
B5137
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subminiature tubes
Abstract: 5641
Text: SYLYAMY W SYLVANIA engineering data service 5641 QUICK REFERENCE DATA M ECHANICAL DATA B u l b . . T-3 B a s e . E8-10, Subminiature Button Flexible Leads
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E8-10,
39vn0A
subminiature tubes
5641
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pentode 5899
Abstract: sm 4109 5899 tube resistor120 SM 4108 335C 400C 5899 subminiature tubes
Text: SYLVANIA SYLVANIA* engineering data service w 5899 QUICK REFERENCE DATA M ECHANICAL DATA B u l b .T-3 B a s e . E8-10, Subminiature Button Flexible Leads
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E8-10,
pentode 5899
sm 4109
5899 tube
resistor120
SM 4108
335C
400C
5899
subminiature tubes
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5718 TUBE
Abstract: 5718 on 5718 BALLANTINE subminiature 5718 SM 4108 400C 450C subminiature tubes LA 4108
Text: SYLVANIA SYLVANIAjpU' engineering data service ^ M ECHANICAL DATA 5718 QUICK REFERENCE DATA B u l b .T-3 B a s e .E8-10, S u b m in ia tu re B u tto n F lex ib le L eads
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E8-10,
5718 TUBE
5718
on 5718
BALLANTINE
subminiature 5718
SM 4108
400C
450C
subminiature tubes
LA 4108
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5719 TRIODE
Abstract: 5719 TRIODE APPLICATION 5719 tube 5719 120C 400C sm 4109 sylvania 57 tube subminiature tubes subminiature 5719
Text: SYLVANIA SYLVANIA engineering data service w 5719 QUICK REFERENCE DATA M ECHANICAL DATA T h e Prem ium Su b m in iature Type 5719 is a high mu triode designed for use in low level audio applications. It is intended for service under conditions of severe shock, vibration, high
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E8-10,
5719 TRIODE
5719 TRIODE APPLICATION
5719 tube
5719
120C
400C
sm 4109
sylvania 57 tube
subminiature tubes
subminiature 5719
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6112 tube
Abstract: sylvania 6112 tube SM 4108 5719 TRIODE 6112 subminiature 813 electron tube 6112 5719 TRIODE APPLICATION 400C Ecc 81 tube
Text: SYLVANIA SY1AAMV W engineering data service 6112 QUICK REFERENCE DATA MECHANICAL DATA B u l b . . T-3 B a s e . E8-10, Subm iniature B utton F lexib le L ead s
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E8-10,
6112 tube
sylvania 6112 tube
SM 4108
5719 TRIODE
6112 subminiature
813 electron tube
6112
5719 TRIODE APPLICATION
400C
Ecc 81 tube
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single phase ups circuit diagram
Abstract: three phase on line ups circuit diagrams MC10802 IC LA 4138 LA 4138 000FA
Text: g MOTOROLA MC10802 Advance Information M E C L - LSI TIMING FUNCTION INTRODUCTION The M C10802 Tim ing Fun ction is an L S I building block for digital processor systems. This circuit contains the logic and control lines to generate system clock phases and provides for start, stop,
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MC10802
MC10802
single phase ups circuit diagram
three phase on line ups circuit diagrams
IC LA 4138
LA 4138
000FA
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Sony CXD
Abstract: CXD1088AQ sony 2192 100MIL 023p CXD1088
Text: CXD1088AQ S O N Y Over Sampling Digital Filter LSI Description Package Outline C XD1088A Q is a d ig ita l filte r LSI U nit: m m w ith q u a d ru p le d s a m p lin g ra te , d e v e lo p e d fo r c o m 4 4 pin Q FP p a ct disc p la y e r. 14.5 «•*
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CXD1088AQ
CXD1088AQ
qfp-44p-101
50MIL)
50MIL
Sony CXD
sony 2192
100MIL
023p
CXD1088
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m0325
Abstract: M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261
Text: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 MULTIPLE SILICON ANNULAR TRANSISTORS PNP SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation applications.
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MD3250,
MD3251,
MQ3251
50mAdc
MD3251
MD3250'
m0325
M-0325
MD3250
MD3250F
MD3251
MD3251F
MQ3251
MQ3261
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IN5717
Abstract: IN5718 IN5714 7C3 diode IN5421
Text: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X
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100pf
CV830-CV840
MV830-MV84G
CV1006-16-CV1106-16
FV1006-16,
FV1106-16
CV1620-CV1650
MV1620-MV1650
CV1652-CV1666
MV1652-MV1666
IN5717
IN5718
IN5714
7C3 diode
IN5421
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MMCM918
Abstract: MMCM930 MMT807 MMT809 MMT918 MMT930
Text: MMT809 silicon M IC R O M IN IA T U R E PNP S IL IC O N A N N U L A R T R A N S IS T O R M IC R O P O W E R S E R IE S PNP S IL IC O N A M P L IF IE R T R A N S IS T O R . . . designed fo r high-frequency, low *pow er am plifier applications. • D C C urre n t G ain @ U ltra L o w C u rre n t —
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MMT809
100/tiAdc
MMT807
MMT918
MMCM918
MMT930
MMCM930
MMT807
MMT809
MMT918
MMT930
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MC1519G
Abstract: 033s MC1519 teledyne crystalonics jeled
Text: WIDEBAND DIFFERENTIAL AMPLIFIER MC1519G FEATURES • B A L A N C E D D I F F E R E N T I A L A M P L IF I E R C O N F IG U R A T I O N W ITH C O N T R O L L E D C O N S T A N T C U R R E N T SOURCE. • M O N O L IT H IC NPN IN P U T P AIR A N D M A T C H E D T H IN F IL M
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MC1519G
MC1519G
033s
MC1519
teledyne crystalonics
jeled
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MD7004
Abstract: MD7004F MQ7004 0290B
Text: M D 7 0 0 4 , F s ilic o n M Q 7 0 0 4 NPN SILICON DUAL TRANSISTORS M ULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual high speed switches, front end detectors and temperature compensation ap plications. •
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MD7004,
MQ7004
MD7004
MD7004F
MQ7004
0290B
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PDF
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MD708B
Abstract: VE-16V MD708 MD708A MD708AF MD708BF MD708F
Text: MD708, F silicon MD708A, AF MD708B, BF NPN SILICON ANNULAR MULTIPLE: TRANSISTORS . . . designed for use as differential amplifiers, dual high-speed switches, front end detectors and temperature com pensation ap plications. • NPN SILICON MULTIPLE TRANSISTORS
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MD708,
MD708A,
MD708B,
MD708A
MD708B
VE-16V
MD708
MD708AF
MD708BF
MD708F
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PDF
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MPSA18
Abstract: MPSA18 equivalent
Text: MPSA18* MAXIM UM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage CASE 29-04, STYLE 1 TO-92 TO-226AA Ve b O 6.5 Vdc Collector Current — Continuous 'C 200 mAdc Total Device Dissipation @ Ta = 25°C
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MPSA18*
O-226AA)
MPSA18
MPSA18 equivalent
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MD3250
Abstract: MD3250A MD3251 MD3251A MQ3251 MQ3261 m0325 M-0325 M03251
Text: M D3250,A,AF,F, MQ3251 ,A ,A F ,F , MQ3251 continued T H E R M A L C O U P LIN G AND E F F E C T IV E T H E R M A L R E S IS T A N C E In m ultiple chip devices, coupling of heat between die occurs. The junction temperature can be calculated as follows:
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MD3250
MQ3251
MD3251
MD3250'
MD3251,
MD3250A
MD3251
MD3251A
MQ3251
MQ3261
m0325
M-0325
M03251
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PDF
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CD4019
Abstract: ZN 1034 ZN 1034 applications MC14519B mc1401 MC14XXXBCL MC14XXXBCP MC14XXXBD
Text: M C14519B M O T O R O L A 4-BIT AND/OR SELECTOR or L SUFFIX CERAMIC CASE 620 QUAD 2-CHANNEL DATA SELECTOR or QUAD EXCLUSIVE "NOR" GATE The MC14519B is constructed with MOS P-channel and N-channei en hancement mode devices in a monolithic structure. These complementary
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MC14519B
MC14519B
CD4019
ZN 1034
ZN 1034 applications
mc1401
MC14XXXBCL
MC14XXXBCP
MC14XXXBD
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PDF
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scr C106
Abstract: c106 scr equivalent SCR c106 GE scr C106 GE C106F2 SCR C106Y1 CI06 SCR C106Y1 terminal SCR 406J C106B2
Text: Silicon Controlled Rectifier Flat Pack Design Model C106 Up to 600 Volts 4 Amperes RMS o PRO D U C T FEATURES The Type C106 Silicon Controlled Rectifier (SCR) has the following outstanding featu res: o Cl 06 TYPE 4 LOW COST Cl 06 TYPE 2 O perates directly fro m low signal
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X45-REF
scr C106
c106 scr
equivalent SCR c106
GE scr C106
GE C106F2
SCR C106Y1
CI06
SCR C106Y1 terminal
SCR 406J
C106B2
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