nec 4217400
Abstract: 4217400 upd4217400
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿ PD4216400, 4217400 are 4 194 304 w o rd s by 4 b its d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP (II and 26-pin plastic SOJ.
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uPD4216400
uPD4217400
PD4216400,
26-pin
/PD4216400-50
//PD4217400-50
/PD4216400-60
PD4217400-60
/iPD4216400-70
nec 4217400
4217400
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000AC72F 4 M-WORD BY 72-BIT DYNAMIC RAM M ODULE FA ST PAGE M ODE ECC D escrip tio n The MC-424000AC72F is a 4,194,304 w ords by 72 bits dynamic RAM module on which 18 pieces of 16 M DRAM: juPD4216400 are assem bled.
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MC-424000AC72F
72-BIT
MC-424000AC72F
juPD4216400
MC-424000AC72-60
M168S-50A2
D0SA23S
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nec 4217400
Abstract: PD4217400
Text: SEC fiPD4216400, 4217400 4,194,304 X 4-Bit Dynamic C M O S RAM NEC Electronics Inc. Description The juPD4216400 and the /ljPD4217400 are fast-page dynam ic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single + 5 -vo lt power supply. Advanced polycide technology m inim izes sili
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uPD4216400
juPD4216400
/ljPD4217400
JIPD4216400,
ffPD4216400,
fiPD4216400,
nec 4217400
PD4217400
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The /JPD4216400, 4217400 are 4 194 304 w o rd s by 4 bits d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP II and 26-pin plastic SOJ.
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PD4216400
/JPD4216400,
26-pin
PD4216400-50
bM2755S
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D4217400
Abstract: nec 4217400
Text: JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/PD4216400 and the /JPD4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili
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JJPD4216400,
/PD4216400
/JPD4217400
28/24-pin
MjE30(
6D-15
fiPD4216400,
pPD4216400,
D4217400
nec 4217400
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6400L-A5G
Abstract: d4216400
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
/iPD42S16400L,
4216400L,
42S17400L,
4217400L
JUPD42S16400L,
42S17400L
6400L-A5G
d4216400
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L42S
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION T h e ¿¿PD42S16400L, 4 216400L, 42S 17 4 00 L , 4 217400L are 4 194 304 w o r d s b y 4 b its d y n a m ic C M O S R A M s.
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
PD42S16400L,
216400L,
217400L
PD42S17400L
L42S
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nec vw rcd 300
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT //PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE DESCRIPTION The |iPD 4216400, 4217400 are 4 194 304 words by 4 bits dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 4 194 304 w o rd s by 4 bits organization
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uPD4216400
uPD4217400
/JPD4216400,
PD4216400G3,
4217400G3
26-pin
PD4216400LA,
4217400LA
nec vw rcd 300
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Untitled
Abstract: No abstract text available
Text: Document No. M10339EJ2V0UMU1 983 IN T R O D U C TIO N Purpose This manual is intended for users who understand DRAM functions and design applica tion systems using DRAMs. Readers This manual explains the basic properties of DRAM and their use. How to read this manual It is assumed that readers of this manual have general knowledge in the fields of
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M10339EJ2V0UMU1
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