DS1304
Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
Text: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ
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CI100505-1N0D
CI100505-1N2D
CI100505-1N5D
CI100505-1N8D
CI100505-2N2D
CI100505-2N7D
CI100505-3N3D
CI100505-3N9D
CI100505-4N7D
CI100505-5N6D
DS1304
aem r10k
SMP3316-103M
ds1303
renco 4r7
SMTDR54-120M
smtdr75
SMTDR75-680K
SMTDR75-221K
MLF1608A1R0KT
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smd code Z70
Abstract: SMD MARKING CODE A20 smd transistor bzx84-c12 A13 MARKING CODE marking code y2 SMD Transistor smd code marking WV BZX84-C5V1, BZX84-B5V1, BZX84-A5V1 BZX84-B5V6 Z59 smd code z16 z67 smd
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW
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M3D088
BZX84
613514/03/pp11
smd code Z70
SMD MARKING CODE A20
smd transistor bzx84-c12
A13 MARKING CODE
marking code y2 SMD Transistor
smd code marking WV
BZX84-C5V1, BZX84-B5V1, BZX84-A5V1
BZX84-B5V6 Z59
smd code z16
z67 smd
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y2 smd diodes
Abstract: BZX84 BZX84-A2V4 BZX84-A2V7 BZX84-A3V0 BZX84-A3V3 BZX84-A3V6 BZX84-A75 smd code book z1 BZX84-A5V6
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification Supersedes data of 1999 May 18 2003 Apr 10 Philips Semiconductors Product specification Voltage regulator diodes BZX84 series FEATURES PINNING
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M3D088
BZX84
c2003SCA75All
y2 smd diodes
BZX84-A2V4
BZX84-A2V7
BZX84-A3V0
BZX84-A3V3
BZX84-A3V6
BZX84-A75
smd code book z1
BZX84-A5V6
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SMD MARKING A69
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW
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M3D088
BZX84
613514/03/pp11
SMD MARKING A69
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BZX84
Abstract: z67 smd smd code z16 smd code book z1 smd marking code z12 bzx84-a18 SMD MARKING CODE A20 smd diode marking Z1 y69 sot23 marking code marking code y2 SMD Transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification Supersedes data of 1999 May 18 2003 Apr 10 Philips Semiconductors Product specification Voltage regulator diodes BZX84 series FEATURES PINNING
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M3D088
BZX84
SCA75
613514/03/pp12
z67 smd
smd code z16
smd code book z1
smd marking code z12
bzx84-a18
SMD MARKING CODE A20
smd diode marking Z1
y69 sot23 marking code
marking code y2 SMD Transistor
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7542s
Abstract: AD7542AD
Text: ANALOG DEVICES □ FEATURES R esolutio n: 12 Bits N o n lin e a rity : ± 1/2LSB T m,n to T max L o w G ain D rift: 2ppm /°C ty p , 5 p p m C m ax M icroprocesso r C o m p a tib le Full 4 -Q u a d ra n t M u ltip lic a tio n CMOS jtP-Compatible 12-Bit DAC
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12-Bit
AD7542
16-pin
7542s
AD7542AD
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c3v9
Abstract: CECC50 005 BZV85 philips 683 series c6v2 C7V5 BZ/88/C4V7
Text: N AMER P H IL IP S /D IS C R E T E SSE D • ^53^31 G G IL T SI Â Q ■ BZV85 SE R IE S T - / M VOLTAGE REGULATOR DIO DES 3 ^ Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended for stabilization purposes. The series covers the normalized E24 ± 5% range of nominal working voltages
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bb53131
BZV85
DO-41
7Z82193
7Z82194
c3v9
CECC50 005
philips 683 series
c6v2
C7V5
BZ/88/C4V7
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SFH485
Abstract: 44er
Text: SIEMENS C M P N T S i OPTO MM E D UÈ fl23b3Sb O O O S I M O S IE M E N S 2 BSIEX SFH485 GaAIAs INFRARED EMITTER T—41 —13 Maximum Ratings FEATURES • Radiant Intensity Sele ction s SFH485-1 16-32 SFH485-2 25-50 SFH485-3 ¿ 4 0 • Perfect Spectral Match with Silicon
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fl23b3Sb
SFH485
T--41
SFH485-1
SFH485-2
SFH485-3
T--41--13
SFH485
44er
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54ALS29821
Abstract: No abstract text available
Text: DFSf FORM *19? St.r o / D IS T R IB U T IO N S T A T E M E N T A . * U.S. GOVERNMENT PRINTING OFFICE: 19f7 — 74S-129/609 1 A p p ro v e d fo r p u b lic r e le a s e ; d i s t r ib u t io n Is u n lim it e d . 5962—E1618 1. SCOPE 1.1 Scope. T h is dra w in g d e s c rib e s d e v ic e re q u ire m e n ts f o r c la s s B m ic r o c ir c u it s in accordance
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5962-9061601LX
SNJ54ALS29821JT
550-S4T
54ALS29821
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE PMSmQj SERIES bbSBTBl DD11L7T fl ObE D _y v_ l ~ 0 3 - 13 EPITAXIAL AVALANCHE DIODES The PHS1001 series devices are glass-passivated epitaxial silicon rectifier diodes in hermetically sealed glass envelopes. These devices feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off
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DD11L7T
PHS1001
PHS1001,
PHS1002
PHS1003.
PHS1001
7Z88041
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AM29818A
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 9 10 11 12 13 14 PMIC N/A STANDARDIZED MILITARY DRAWING T H IS DR A W IN G IS AVAILABLE FOR U S E B Y A L L D E P A R TM EN TS A N D A G E N C IE S O F T H E
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748-1J9/6OT11
5962-E1225
5962-8954901KX
AM29818A/BKA
5962-8954901LX
AM29818A/BLA
5962-89549013X
AM29818A/B3A
AM29818A
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HJ6D
Abstract: 74365 S535 7718Q 1N916 SN74S535 SN74S536 SS36 74ls gate symbols
Text: 8 -B it Latch, 8 -B it Register w ith Inverting, 3 2 mA Outputs SN74S535 SN74S536 Ordering Information Features/ Benefits • Inverting outputs • High-drive capability Iq l = 32 mA PART NUMBER • Three-state outputs drive bus lines SN74S535 • 20-pin SKINNYDIP* saves space
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SN74S535
SN74S536
20-pin
SN74S533/4
1N3064.
54/74S,
50iland:
54/74LS
HJ6D
74365
S535
7718Q
1N916
SN74S536
SS36
74ls gate symbols
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byv26 500
Abstract: BYV26 BYV26A FAST RECOVERY RECTIFIERS Diode BYV26B BYV26C BYV26D BYV26E BYV26F BYV26G
Text: Product specification Philips Semiconductors Fast soft-recovery controlled avalanche rectifiers BYV26 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD57 package, using a high temperature alloyed construction. • High maximum operating temperature
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BYV26
BYV26A
BYV26B
BYV26C
711Dfi2fc.
byv26 500
BYV26A
FAST RECOVERY RECTIFIERS Diode
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
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Untitled
Abstract: No abstract text available
Text: i REVISIONS LTR DESCRIPTION A DATE Convert to m ilit a r y drawing. Changes to tab le I. Changes to fig u re s 2 and 4. E d ito ria l changes throughout. B APPROVED 19 Aug 87 Change to table I and fig u re 1 dimensions. w u U 22 Jan 88 1 CURRENT CAGE CODE 67268
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MIL-STD-883,
MIL-M-38610
8601701QX
AM2904/BQA
8601701YX
AM2904/BYC
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BYM26C PH
Abstract: No abstract text available
Text: b'lE D N AMER PHI LIPS/ DISCRE TE bb53^31 0D57Q1S 7fi3 BIAPX Philips Semiconductors Product specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse
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0D57Q1S
BYM26
BYM26A
BYM26D
BYM26C
BYM26B
BYM26E
BYM26C PH
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Philips FA 291
Abstract: No abstract text available
Text: D IS C R E T E S E M IC O N D U C T O R S BZV55 series Voltage regulator diodes Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 Philips Semiconductors 1996 Apr 26 PHILIPS P h ilip s S e m i c o n d u c t o r s
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BZV55
OD80C
BZV55-B)
BZV55-F)
BZV55-C)
Philips FA 291
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Untitled
Abstract: No abstract text available
Text: ILH100 SIEMENS Hermetic Phototransistor Optocoupler FEATURES • Operating Temperature Range, -55°C to+125°C • Current Transfer Ratio Guaranteed from -55°C to +100°C Am btontTem peratui*Range • High Current Transfer Ratio a t Low Input Currant • Isolation Test VMtage, 3000 Vop
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ILH100
ILH100
10Kft
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1N589
Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Text: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993
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GD0D12S
003S612
ml-S-19S00/477b
n1l-s-19s00/477a
1n58q2,
1ns804,
1ns806,
1ns807,
1h5809,
1ns811,
1N589
IN5809
1v500
1M5811
JANTX 1N5811
DIODE 1N5804
1N5896
j 5804
ns802
1N5809 equivalent
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Untitled
Abstract: No abstract text available
Text: I VCR standard audio signal processor BA7797F The BA7797F is a normal-audio signal processor designed for use m VCRs and tape decks. The circuit is comprised of a playback preamplifier, a line amplifier, a recording ampiifier, an ALC circuit and high-voltage head switch.
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BA7797F
BA7797F
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melcher LM
Abstract: TS 100-12
Text: SWE-Family AC-DC Converters <100 W TOKO 50/75/100 W AC-DC Converters Benign Environment SWE-Family Input to output isolation Single output • Ultra thin and compact • High isolation • Universal input 85—264 V AC • Noise standard: meets EN 55011/55022
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Untitled
Abstract: No abstract text available
Text: FAST CMOS 18-BIT R/W BUFFER IDT54/74FCT162701T/AT In te g ra te d D evice T ech n o lo g y , In c. FEATURES: DESCRIPTION: 0.5 MICRON CMOS Technology The IDT54/74FCT162701 T/AT is an 18-bit Read/Write buffer with a four deep FIFO and a read-back latch. It can
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18-BIT
IDT54/74FCT162701T/AT
IDT54/74FCT162701
18-bit
54/74FCT162701
MA25771
MIL-STD-883,
S056-1J
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McEx specification
Abstract: 8602901YX 198S MIL-M-3B510 24V0C TS2914MJ
Text: REVISIONS DESCRIPTION DATE YR-MO-M Add fo o tn o te ZJ. D e le te t p d l 8 * t pd 2 2 > and t pd27 from tab1e 1 C o n vert to m i l i t a r y draw in g fo rm a t, E d it o r ia l changes th ro u g h o u t. 1986 OCT 27 Change code id e n t i f i c a t i o n number to 67268. Add vendor CAGE
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tpd27
MICROC35
AM2914/BYC
8602901UX
AM2914/BUA
TS2914MEB/C
McEx specification
8602901YX
198S
MIL-M-3B510
24V0C
TS2914MJ
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TMP87
Abstract: 87CK14 TMP87PM14F SDIP64-P-750-1 TLCS-870 87CH14 WJ SI G8
Text: TMP87C814/H14/K14/M 14 TO SHIBA CM O S 8 b i ' y h V < ^ P = l > h P - 7 TMP87C814N/F, TMP87CH14N/Ff TMP87CK14N/Ff TMP87CM14N/F 87C814/H14/K14/M14íá, v 'J 7 i H ^ 7 x - X , 81f •; h A /D n > y 9 ï $ X Tf27fcffà<D§è$è\B\ì&fJ: £' & Ñ Ü L 7 t FlbiS, Ft¡fttb8 tf "j h 's 's ? )V ■=?- y 7
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P87C814/H14/K14/M14
TMP87C814N/F#
TMP87CH14N/F#
TMP87CK14N/F#
TMP87CM14N/F
87C814/H14/K14/M14fÃ
TMP87C814N/F
SDIP64-P-750-1
QFP64-P-1420-1
TMP87PM14N/F
TMP87
87CK14
TMP87PM14F
TLCS-870
87CH14
WJ SI G8
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Untitled
Abstract: No abstract text available
Text: SONY CXP85112B/85116B CXP85220A/85224A/85228A/85232A CMOS 8-bit Single Chip Microcomputer Description Tfitì CXP85112B/85116B, CXP85220A/85224A/ 85228A/85232A is a CMOS 8-bit single chip microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time base
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CXP85112B/85116B
CXP85220A/85224A/85228A/85232A
CXP85112B/85116B,
CXP85220A/85224A/
5228A/85232A
CXP851123/85
CXPB5220A/8522Â
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