HSML-2822
Abstract: varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW
Text: Schottky Enhanced PIN Limiter Compact, low threshold and wideband Application Note 5438 Introduction The sharing of sites or towers by multiple transceivers subjects receiver front-end stages to overload from nonsynchronous transmissions via mutual coupling between
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HSMP382x
10Agilent
11Agilent
AV02-2139EN
HSML-2822
varactor diode model in ADS
Limiter PIN diode ADS model
hsml5822
PIN diode ADS model
varactor diode in p-n junction in ads
ADS varactor diode
hsms2820 limiter
zero bias schottky diode 2GHz
transistor JSW
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AN4001
Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
Text: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at
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AN4001
MRF151A
12MHz,
AN4001
laser diode spice model simulation
Class E amplifier
300 watt mosfet amplifier class AB
MRF transistor
PIN diode MACOM SPICE model
27.12MHz power amplifier
27.12Mhz
500 watt mosfet power amplifier circuit diagram
1000 watt mosfet power amplifier
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jSw Diode
Abstract: diode JSW jsw 44
Text: Dual Test-Disconnect Terminal Block W-Series WDTR 2.5 WDTR 2.5/WE Ä 'JsW | vs-/TPty, •; <: o Ordering Data Version - — Type — \ w A * -o P art No. Type Part No. B eige W ernid 952807 952809 B lue W e m id 952808 952810 Dimensions W id th /L e n g th /H e ig h t m m in.
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r4kf
Abstract: A454 30S3 T151 T460 T760 T930 TP802C06 T4600
Text: T P 802C 06 ioa *±'J'*-K ' > a - y h + - / < U 7 i ef * - K SCHOTTKY BARRIER DIODE I» « Features '1&Vf Low V f C o n n e c tio n D ia g ra m Super high speed sw itch in g . a w e « *« « !* High reliability by planer design : A ppl ¡cations H igh speed pow er sw itch in g .
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TP802C06noA)
500ns,
Cl95t/R89)
r4kf
A454
30S3
T151
T460
T760
T930
TP802C06
T4600
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marking 606
Abstract: No abstract text available
Text: Ordering n u m b e r:E N 4889 II _ FX606 No.4889 N-Channel Silicon MOSFET SAÜVO i — l Ultrahigh-Speed Switching Applications I F eatures •Composite type composed of two low ON-reBistance N-channel MOSFET chips for ultrahigh-speed
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FX606
FX606
2SK1470,
marking 606
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2FI50A
Abstract: T760 T810 T930 lthf* E3
Text: 2FI50A 2 x50A ! Outline Drawings FAST RECOVERY DIODE MODULE • 4# : Features • S h o rt Reverse Recovery Tim e • V ariety o f C o n n e c tio n M e n u • SfeSfîfé Insulated Type ■ ff liÊ i A pplications A rc -W e ld e rs • K ffl • F re e -W h e e lin g D iode
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2FI50A
2X50A)
2FI50A
50/60Hz
eaTa5S35^
l95t/R89
T760
T810
T930
lthf* E3
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transistor JSW
Abstract: jSw Diode
Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q1US51
transistor JSW
jSw Diode
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package.
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MG15Q6ES50A
961001EAA1
TjS125Â
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TRANSFORMER bck 03
Abstract: transistor JSW 07 OP295
Text: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable
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0P-295/0P-495
OP-295
14-Lead
TRANSFORMER bck 03
transistor JSW 07
OP295
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jSw Diode
Abstract: No abstract text available
Text: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage
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MG300Q2YS50
961001EAA1
jSw Diode
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transistor JSW
Abstract: toshiba srf
Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q2YS50
transistor JSW
toshiba srf
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transistor GY 721
Abstract: transistor JSW LT 723 ic jSw Diode
Text: TOSHIBA MG240V1US41 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT M G 2 4 0 V 1 US41 HIGH PO W E R SWITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed
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MG240V1US41
i00000,
transistor GY 721
transistor JSW
LT 723 ic
jSw Diode
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q2YS50
TjS125Â
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transistor JSW
Abstract: diode JSW FL 576-K125
Text: 6DI30M-050 30 a Outline Drawings POWER TRANSISTOR MODULE ‘ F e a tu re s • ifi5hFE High DC Current Gain • iS i S TA'V’f-'sif High Speed Switching : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N C lflM S tM
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6DI30M-050
E82988
l95t/R89
Shl50
transistor JSW
diode JSW
FL 576-K125
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10MHz ultrasound pulser
Abstract: USH5010 USH5010-AIC24 5SWOA
Text: USH5010 HIGH VO LTAG E Universal Semiconductor FEATURES channelSWITCH ANALOG GENERAL DESCRIPTION Full D ielectric Isolation fo r High Reliability 4 5 dB ty p ica l O u tp u t O ff Isolation at 10 Mhz T ypical on resistance, R o n , is 2 8 ohms E xcellent Noise Im m u n ity & Extrem ely Low I s o l
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ush5010
10Mhz
/-80V
28-lead
10MHz ultrasound pulser
USH5010
USH5010-AIC24
5SWOA
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tc6105
Abstract: 2SK679 BH rn transistor 10285 TC-6105
Text: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8
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2SK679
2SK679Ã
TC-6105
tc6105
2SK679
BH rn transistor
10285
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imperial m015
Abstract: No abstract text available
Text: □ ANALOG DEVICES Dual/Quad Single Supply Operational Amplifiers 0P292/0P492 FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V/ jls High Gain Bandwidth: 4 MHz Low Input Offset Voltage
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0P292/0P492
OP292
14-Lead
OP292/OP492
1E-13
37E-13
11E-13
48E-6
53E16
75E-6
imperial m015
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imperial m015
Abstract: BF253
Text: ANALOG ► DEVICES Dual/Quad Single Supply Operational Amplifier 0P292/0P492 FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V / jjls High Gain Bandwidth: 4 MHz Low Input Offset Voltage
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0P292/0P492
14-Lead
OP292/OP492
SO-14
imperial m015
BF253
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6823A
Abstract: ZJ DIODE 1d4 nz
Text: FAST CMOS 18-BIT REGISTER FE A T U R E S : - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps - Low input and output leakage <1 n A (max.) - ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
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18-BIT
IDT54/74FCT16823AT/BT/CT/ET
250ps
MIL-STD-883,
200pF,
-32mA
FCT16823AT/BT/L-S
E56-1
823AT
6823A
ZJ DIODE
1d4 nz
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Untitled
Abstract: No abstract text available
Text: FAST CMOS IDT54/74FCT16841AT/BT/CT/ET 20-BIT TRANSPARENT LATCH Júáá$«#JA FEATURES: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps - Low input and output leakage <1 |j A (max.)
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IDT54/74FCT16841AT/BT/CT/ET
20-BIT
FCT16841
10-bit
841CT
E56-1
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ultrasonic receiver
Abstract: 13a1002-c3 OP492 OP492GP BF253 mosfet bf 966 10k resistor array SIP 1752k OP292GP 0P492
Text: ANALOG DEVICES FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V / | jls High Gain Bandwidth: 4 MHz Low Input Offset Voltage High Open-Loop Gain No Phase Inversion Low Cost APPLICATIONS
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0P292/0P492
OP292/OP492
OP292/
OP492
SO-14
14-Lead
C1850-18-10/93
ultrasonic receiver
13a1002-c3
OP492GP
BF253
mosfet bf 966
10k resistor array SIP
1752k
OP292GP
0P492
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16841
Abstract: jSw Diode UG 74 a
Text: FAST CMOS IDT54/74FCT162841AT/BT/CT/ET 20-BIT TRANSPARENT LATCH Júáá$«#JA D E S C R IP TIO N : FEATURES: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps low-powerlatchesareidealfortemporarydata storage. Theycan be used
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IDT54/74FCT162841AT/BT/CT/ET
20-BIT
162841AT/BT/CT/ET
10-bit
841CT
E56-1
16841
jSw Diode
UG 74 a
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Untitled
Abstract: No abstract text available
Text: FAST CMOS 18-BIT REGISTER FE A T U R E S : IDT54/74FCT162823AT/BT/CT/ET D E S C R IP TIO N : - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions - Typical tSK o (Output Skew) < 250ps - Low input and output leakage <1 |j A (max.)
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18-BIT
IDT54/74FCT162823AT/BT/CT/ET
250ps
MIL-STD-883,
200pF,
162823AT/BT/CT/ET18-bit
E56-1
823AT
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transistor JSW
Abstract: SSM2135
Text: JUL e 199Û Dual Single-Supply Audio Operational Amplifier ANALOG ► DEVICES FEATURES Excellent Sonic Characteristics High Output Drive Capability 5.2 n V /V lïz Equivalent Input Noise @ 1 kHz 0.001% THD+N Vn = 2.5 V p-p @ 1 kHz 3.5 MHz Gain Bandwidth
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SSM-2135
2000E
transistor JSW
SSM2135
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