JS88 Search Results

JS88 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MM54HC154JS/883		Rochester Electronics LLC	54HC154 - Decoder, 4-To-16-Line - Dual marked (5962-8682201LA)

JS88 Price and Stock

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Rochester Electronics LLC PAL20R4A-2MJS/883B OT PLD, 50NS, PAL-TYPE, TTL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PAL20R4A-2MJS/883B	Bulk	1,328		25	1 - 10 - 100 $12.19 1000 $12.19 10000 $12.19	Buy Now
Rochester Electronics LLC PAL20R6BMJS/883B OT PLD, 25NS, PAL-TYPE, TTL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PAL20R6BMJS/883B	Bulk	1,200		20	1 - 10 - 100 $15.01 1000 $15.01 10000 $15.01	Buy Now
Rochester Electronics LLC MM54HC154JS/883 DUAL MARKED (5962-8682201LA)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MM54HC154JS/883	Bulk	768		4	1 - 10 $83.62 100 $83.62 1000 $83.62 10000 $83.62	Buy Now
Rochester Electronics	MM54HC154JS/883		768		1	1 $84.42 10 $84.42 100 $79.36 1000 $71.76 10000 $71.76	Buy Now
Rochester Electronics LLC SN54LS461AJS883B IC BINARY COUNTER 8-BIT 24CDIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SN54LS461AJS883B	Bulk	665		7	1 - 10 $45.43 100 $45.43 1000 $45.43 10000 $45.43	Buy Now
Rochester Electronics LLC PAL20R8BMJS/883B OT PLD, 20NS, PAL-TYPE, TTL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PAL20R8BMJS/883B	Bulk	539		11	1 - 10 - 100 $28.71 1000 $28.71 10000 $28.71	Buy Now

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JS88 Datasheets (12)

Part	Manufacturer	Description	Type	PDF
JS8834-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8835-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8836A-AS	Toshiba	FET: 15V Drain Source Voltage: -5V Gate Source Voltage: 0.7A Drain Current	Scan	PDF
JS8837A-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8838A-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8850A-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8851-AS	Toshiba	FET, Power Gaas Fets (Chip Form)	Scan	PDF
JS8853-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8855-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8892-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8893-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8894-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF

JS88 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TOSHIBA M ICRO W A VE POWER M ICRO W AVE SEM ICO NDUCTO R JS8850A-AS TECHNICAL DATA F E AT URES: • ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IM PLANTA TIO N CH IP FORM H IG H PO W ER p1dB = 2 1 5 d B m a t f = 15 G H z H IG H G AIN G^dB = 9 -0 dB at f = 15 GHz	OCR Scan	PDF	JS8850A-AS 15GHz 18GHz 18GHz 15GHz
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8838A-AS Power GaAs FETs Chip Form Features • High power - P1dB = 33.5 dBm at f = 8 GHz • High gain - G1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8838A-AS T0T725D MW10090196 JS8838A-AS
GK 087 Abstract: A1203 SN 46 LS 46 JS8855-AS Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8855-AS TECHNICAL DATA FEATURES: • HIGH POWER p1dB~ 31.5 dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN G1dB = 7dB at f = 15 GH z ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8855-AS 15GHz 18GHz JS8855-AS GK 087 A1203 SN 46 LS 46
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8837A-AS TECHNICAL DATA FEATURES : • HIGH POWER = 3 2 dBm at f = 8 GHz HIGH GAIN G1dB = 7 dB at f = 8 GHz ■ SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8837A-AS JS8837A-AS
Untitled Abstract: No abstract text available Text: TOSHIBA MICROW AVE PO W ER MICROWAVE' SEMICONDUCTOR GaAs FET JS8855-AS TECHNICAL DATA FEATURES: • HIGH POWER PldB = 32dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN GjdB = 7dB at f = 15 GHz ■ ION IMPLANTATION RF P E R F O R M A N C E	OCR Scan	PDF	JS8855-AS 32dBm 855-A 15GHz JS8855-AS
JS8835-AS Abstract: fu20 Text: TOSHIBA M IC R O W A V E P O W E R MICROWAVE SEMICONDUCTOR GaAs FET JS8835-AS TECHNICAL DATA FEATURES: • H IG H POW ER PjdB ~ 2 4 dBm at f = 8 GHz ■ H IG H GAIN Gj^jg = 8 dB 3t f — 8 GHz RF P E R F O R M A N C E SUITABLE FOR C-BAND ION IM PLANTATIO N	OCR Scan	PDF	JS8835-AS JS8835-AS fu20
A1203 Abstract: JS8851-AS MW1011 Text: TOSHIBA MICROWAVE POWER GaAs FET JS8851-AS Power GaAs FETs Chip Form Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8851-AS 24dBmatf 15GHz 18GHz 15GHz A1203 JS8851-AS MW1011
Untitled Abstract: No abstract text available Text: TOSHIBA M ICRO W AVE POWER M ICRO W AVE SEM ICO NDUCTO R GaAs FET JS8838A-AS TECHNICAL DATA F EA TURES: • ■ HIGH POWER PldB = 33.5 dBm at f = 8 GHz HIGH GAIN G^jg = 5.5 dB at f = 8 GHz RF P E R F O R M A N C E i SUITABLE FOR i ION IMPLANTATION C-BAND AMPLIFIER	OCR Scan	PDF	JS8838A-AS JS8838A-AS
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8893-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER PidB = 24.0 dBm at f = 23 GHz HIGH GAIN G id B = 6 .0 dB at f = 2 3 GHz i SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8893-AS JS8893-A 23GHz
Toshiba JS8836A-AS Abstract: JS8836A-AS Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8836A-AS TECHNICAL DATA FEATURES: • HIGH POWER IdB = 29.5 dBm at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION HIGH GAIN G1dB = 7 5 dB at f = 8 GHz CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° Ci	OCR Scan	PDF	JS8836A-AS Bre084 JS8836A-AS Toshiba JS8836A-AS
JS8834-AS Abstract: No abstract text available Text: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36	OCR Scan	PDF	S8834 JS8834-AS S8835 JS8835-AS S8836A S8836B JS8836A-AS S8837A JS8837A-AS S8838A
Untitled Abstract: No abstract text available Text: TOSHIBA M ICROW AVE POW ER MICROWAVE SEMICONDUCTOR JS8835-AS TECHNICAL DATA FEATURES: • H IG H POWER P jjg = 2 4 dBm at f = 8 G H z ■ H IG H GAIN Gj^jg = 8 dB st f = 8 GHz RF P E R F O R M A N C E GaAs FET ' , SUITABLE FOR C-BAND ION IMPLANTATION CHIP FORM	OCR Scan	PDF	JS8835-AS JS8835-AS
A1203 Abstract: JS8853-AS Text: TOSHIBA M IC R O W A V E P O W E R MICROWAVE SEMICONDUCTOR GaAs FET JS8853-AS TECHNICAL DATA FEATURES: • HIG H POW ER PldB = 28.0 dBm at f — 15 G Hz ■ SUITABLE FOR Ku-BAND , JOIM IM PLANTATIO N ■ HIG H GAIN GldB = 7 .0 dB at f = 15 G Hz ■ CHIP FORM	OCR Scan	PDF	JS8853-AS 15GHz 18GHz 15GHz A1203 JS8853-AS
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8892-AS Power GaAs FETs Chip Form Features • High power - P 1dB = 2 1 .0 dBm at f = 2 3 GHz • High gain - G1dB = 6 .5 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8892-AS JS889Z-AS 23GHz MW10150196 JS8892-AS i7250

Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8892-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER PldB = 21.0 dBm at f = 23 GHz HIGH GAIN GldB= 6.5 dB at f = 23 GHz i SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8892-AS 23GHz JS8892-AS
JS8834-AS Abstract: S2230 Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8834-AS TECHNICAL DATA FEATURES: • MEDIUM POWER SUITABLE FOR C-BAND AMPLIFIER p1dB = 21 dBm at f = 8 GHz ION IMPLANTATION ■ HIGH GAIN G1dB = 9 dB at f = 8 GHz CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8834-AS JS8834-AS S2230
JS8893-AS Abstract: k-band amplifier Text: TOSHIBA MICROWAVE MICROW AVE POWER GaAs FET S E M IC O N D U C T O R JS8893-AS TECHNICAL DATA FEATURES: • ■ SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM HIGH POWER PldB = 24.0 dBm at f = 23 GHz HIGH GAIN G1 d B = 6 -0 dB at f = 2 3 GHz RF P E R F O R M A N C E S P E C IF IC A T IO N S Ta = 2 5 ° C	OCR Scan	PDF	JS8893-AS 23GHz JS8893-AS k-band amplifier
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8893-AS Power GaAs FETs Chip Form Features • High power - P1dB = 2 4 .0 d B m a tf = 2 3 G H z • High gain - G 1dB = 6.0 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8893-AS 23GHz MW10160196 JS8893-AS
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8837A-AS Power GaAs FETs Chip Form Features • High power - P idB = 32 dBm at f = 8 GHz • High gain - G1dB = 7 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8837A-AS Type17 JS8837A-AS MW10080196
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8853-AS Power GaAs FETs Chip Form Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1de = 7 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8853-AS 18GHz 15GHz MW10120196
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: • ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IM PLANTATIO N CH IP FORM H IG H POW ER p1dB = 2 1 5 dBm at f = 15 G H z H IG H G AIN GjdB = 9 '0 dB at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8850A-AS 18GHz 15GHz 15GHz
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE M IC R O W A V E POWER GaAs FET S E M IC O N D U C T O R JS8894-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER PidB = 27.0 dBm at f = 23 GHz HIGH GAIN G1 d B = 6-0 dB at f = 23 GHz i SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM	OCR Scan	PDF	JS8894-AS 23GHz 894-A
JS8836A-AS Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8836A-AS TECHNICAL DATA FEATURES: • HIGH POWER PjdB = 29.5 dBm at f = 8 GHz • HIGH GAIN G1dB = 7 5 dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° Ci	OCR Scan	PDF	JS8836A-AS JS8836A-AS
Untitled Abstract: No abstract text available Text: TOSHIBA MICROW AVE POW ER MICROWAVE SEMICONDUCTOR TECHNICAL DATA GaAs FET JS8835-AS FEAT URES: • HIG H POWER PjdB = 2 4 dBm at f = 8 GHz ■ H IG H GAIN Gjdß — 8 dB st f — 8 GHz RF P E R F O R M A N C E ■ ■ ■ SUITABLE FOR C-BAND ION IMPLANTATION	OCR Scan	PDF	JS8835-AS JS8835-AS

JS88 Search Results

JS88 Result Highlights (1)

JS88 Price and Stock

Rochester Electronics LLC PAL20R4A-2MJS/883B

Rochester Electronics LLC PAL20R6BMJS/883B

Rochester Electronics LLC MM54HC154JS/883

Rochester Electronics LLC SN54LS461AJS883B

Rochester Electronics LLC PAL20R8BMJS/883B

JS88 Datasheets (12)

JS88 Datasheets Context Search

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GK 087

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JS8835-AS

A1203

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Toshiba JS8836A-AS

JS8834-AS

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A1203

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JS8834-AS

JS8893-AS

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JS8836A-AS

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